• Korean Journal of Materials Research
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• v.29 no.5
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• pp.297-303
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• 2019

A triple-layered $PMMA/Ni_{64}Zr_{36}/PDMS$ hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the $Ni_{64}Zr_{36}$ alloy layer to give a high hydrogen-selectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the $Pd_{77}Ag_{23}$ sensor. Despite using low cost $Ni_{64}Zr_{36}$ alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.21.2-21.2
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• 2007

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.16-19
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• 2003

Ni thin films on the p-InP (In) substrates were grown at room temperature by using the ion beam-assisted deposition. In order to determine the work function of the Ni thin films, the $\gamma$values were measured as functions of the acceleration voltages by using Ne, Ar, $N_2$. and Xe ion sources. The dependences of the values on various gases and on the acceleration voltages of the focused ion beam were obtained to determine the work function of the Ni thin films. The value of the work function of the Ni thin films grown on the p-InP (100) substrate was 5.8 eV ~ 5.85 eV. These results provide important information on the electronic properties of Ni thin films grown on p-InP (100) substrates at room temperature.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.158-158
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• 2009

The electrophoretic deposition(EPD) technique with a wide range of novel applications in the processing of advanced ceramic materials and coatings, has recently gained increasing interest both in academic and industrial sector not only because of the high versatility of its use with different materials and their combinations but also because of its cost-effectiveness requiring simple apparatus. Compared to other advanced shaping techniques, the EPD process is very versatile since it can be modified easily for a specific application. For example, deposition can be made on flat, cylinderical or any other shaped substrate with only minor charge in electrode design and positioning[1]. The synthesis of the nano-sized Ce0.2Sm0.8O1.9(SDC)particles prepared by aurea based low temperature hydrothermal process was investigated in this study[2].When we made the SDC nanoparticles, changed the time of synthesis of the SDC. The SDC nanoparticles were characterized with field-emission scanning electron microscope(FESEM), energy dispersive X-ray analysis(EDX), and X-ray diffraction(XRD). And also we researched the results of our investigation on electrophoretic deposition(EPD) of the SDC particles from its suspension in acetone solution onto a non-conducting NiO-SDC substrate. In principle, it is possible to carry out electrophoretic deposition on non-conducting substrates. In this case, the EPD of SDC particles on a NiO-SDC substrate was made possible through the use of a adequately porous substrate. The continuous pores in the substrates, when saturated with the solvent, helped in establishing a "conductive path" between the electrode and the particles in suspension[3-4]. Deposition rate was found to increase its increasing deposition time and voltage. After annealing the samples $1400^{\circ}C$, we observed that deposited substrate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.260-264
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• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.02a
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• pp.37-59
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• 2004

In the case of Ni/Au finished pad on the package side, the solder joint of SnAgCu system can bring brittle fracture under impact load such as drop test. Therefore, it's difficult to prevent the brittle fracture of lead-free solder, by controlling Cu content. The failure locus existing on the interface between $(Ni,Cu)_3Sn_4\;and\;(Cu,Ni)_6Sn_5$ IMC layers must be changed to other site in order to avoid brittle fracture due to impact load. It was not found any clear evidence that there were two IMC layers exist. But it was strongly assumed these were two layers which have different Cu-Ni composition. From the above analysis it was assumed that Cu atom in the solder alloy or substrate seemed to affect IMC composition and cause to IMC brittle fracture.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1544-1546
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• 1996

Thin films of Cu-Ni alloys of various compositions were prepared by RF sputtering onto glass and stainless steel substrates. The effect of composition, substrate temperature, Ar partial pressure, aging time on the electrical properties of Cu-Ni film strain gages in the thickness range $500{\sim}2000{\AA}$ was studied. The maximum resistivity is obtained from 53wt%Cu-47wt%Ni films, while their TCR becomes minimum. This tendency is very desirable for thin film strain gages.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.5
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• pp.113-118
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• 2008

We have developed an integrated giant magneto resistance using not only circuit but also integrating technique with semiconductor for automobile application. It has four elements used for giant magneto resistance sensor. Ni-Fe/Cu multi layers were prepared on a glass substrate by magnetron sputtering. The dependence of magneto resistance on the thickness of the Ni-Fe and Cu layers was investigated. The MR ratio showed a saturated a peak at Cu layer $10{\AA}$, Ni-Fe layer $50{\AA}$, where the MR ratio is about 8.7% at room temperature. By means of Ni-Fe multi film and specific integrating technique, these new giant magneto resistance sensor showed excellent resistance characteristics.

• Journal of Magnetics
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• v.6 no.4
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• Journal of Welding and Joining
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• v.20 no.5
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• pp.120-126
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• 2002

Ni-5%Al alloy powder is widely used as the bond coating powder to improve the adhesive strength between the substrate and coating. The important properties in the bond coating are the deposition efficiency and surface roughness. In this study, it was tried to optimize the plasma spray parameters to maximize the deposition efficiency and surface roughness. In the first step, spray current and hydrogen gas flow rate were optimized in order to increase the deposition efficiency. In the next step, the seven plasma spray variables were selected and optimized to improve both the deposition efficiency and surface roughness using the Taguchi experimental method. By these optimization, the deposition efficiency was improved from about 10 % at the frist time to 51.2 % by the optimization of spray current and hydrogen gas flow rate and finally to 65.2 % by the Taguchi experimental method. The average surface roughness was increased from about $12.9\mu\textrm{m}$ to $15.4\mu\textrm{m}$.