Abstract
We have developed an integrated giant magneto resistance using not only circuit but also integrating technique with semiconductor for automobile application. It has four elements used for giant magneto resistance sensor. Ni-Fe/Cu multi layers were prepared on a glass substrate by magnetron sputtering. The dependence of magneto resistance on the thickness of the Ni-Fe and Cu layers was investigated. The MR ratio showed a saturated a peak at Cu layer $10{\AA}$, Ni-Fe layer $50{\AA}$, where the MR ratio is about 8.7% at room temperature. By means of Ni-Fe multi film and specific integrating technique, these new giant magneto resistance sensor showed excellent resistance characteristics.
