• Title/Summary/Keyword: Ni seed layer

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Fabrication of polycrystalline Si films by rapid thermal annealing of amorphous Si film using a poly-Si seed layer grown by vapor-induced crystallization

  • Yang, Yong-Ho;An, Gyeong-Min;Gang, Seung-Mo;An, Byeong-Tae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.58.1-58.1
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    • 2010
  • We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

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Study on deposition condition of multi-layer oxide buffer by PLD for YBCO Coated Conductor (PLD법에 의한 YBCO Coated Conductor를 위한 다층 산화물 박막의 증착 조건 연구)

  • ;;;;;Donggqi Shi
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.10a
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    • pp.153-156
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    • 2003
  • The multi-layer oxide buffer layer for the coated conductor was deposited on biaxially textured Ni substrates using pulsed laser deposition. Oxygen partial pressure, 4%$H_2$/Ar partial pressure, and deposition temperature were deposition variables investigated to find the optimum deposition conditions. $Y_2$O$_3$seed layer was deposited epitaxially on metal substrate. The full buffer architecture of $Y_2$O$_3$/YSZ/CeO$_2$was successfully prepared on metal substrate.

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Accuracy Improvement of Screen Printed Ag Paste Patterns on Anodized Al for Electroless Ni Plating (무전해 Ni 도금을 위한 양극 산화막위에 스크린 인쇄된 Ag 페이스트 패턴의 정밀도 개선)

  • Lee, Youn-Seoung;Rha, Sa-Kyun
    • Korean Journal of Materials Research
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    • v.27 no.8
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    • pp.397-402
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    • 2017
  • We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

Fabrication of 2-layer Flexible Copper Clad Laminate by Vacuum Web Coater with a Low Energy Ion Source for Surface Modification (저 에너지 표면 개질 이온원이 설치된 진공 웹 공정을 이용한 2층 flexible copper clad laminate 제작)

  • Choi, Hyoung-Wook;Park, Dong-Hee;Choi, Won-Kook
    • Korean Journal of Materials Research
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    • v.17 no.10
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    • pp.509-515
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    • 2007
  • In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

Study of adhesion properties of flexible copper clad laminate having various thickness of Cr seed layer under constant temperature and humidity condition (항온항습 조건하에서 Ni/Cr 층의 두께에 따른 FCCL의 접합 신뢰성 평가)

  • Choi, Jung-Hyun;Noh, Bo-In;Yoon, Jeong-Won;Kim, Yong-Il;Jung, Seung-Boo
    • Proceedings of the KWS Conference
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    • 2010.05a
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    • pp.80-80
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    • 2010
  • 전자제품의 소형화, 경량화, 고집적화가 심화됨에 따라 전자제품을 구성하는 회로의 미세화 또한 요구되고 있다. 이러한 요구는 경성회로기판 (rigid printed circuit board, RPCB) 뿐만 아니라 연성회로기판 (flexible printed circuit board, FPCB) 에도 적용되고 있으며 이에 대한 많은 연구 또한 이루어지고 있다. 연성회로기판은 일반적으로 절연층을 이루는 폴리이미드 (polyimide, PI)와 전도층을 이루는 구리로 이루어져 있다. 폴리이미드는 뛰어난 열적 화학적 안정성, 우수한 기계적 특성, 연속공정이 가능한 장점을 가지고 있으나, 고온다습한 환경하에서 높은 흡습성으로 인해 전도층을 이루는 구리와의 접합특성이 저하되는 단점 또한 가지고 있다. 또한 전도층을 이루는 구리는 고온다습한 환경하에서 산화 발생이 용이하기 때문에 접합특성의 감소를 야기할 수 있다. 따라서 본 연구에서는 고온다습한 조건하에서 sputtering and plating 공정을 통해 순수 Cr seed layer를 가지는 연성회로기판의 seed layer의 두께와 시효시간의 변화로 인해 발생하는 접합특성의 변화를 관찰하고 분석하였다. 본 연구에서는 두께 $25{\mu}m$의 일본 Kadena사(社)에서 제작된 폴리이미드 상에 sputtering 공정을 통해 순수 Cr으로 이루어진 각각 두께 100, 200, $300{\AA}$의 seed layer를 형성한 후 전해도금법을 이용, 두께 $8{\mu}m$의 구리 전도층을 형성한 시료를 사용하였다. 제작된 시료는 고온다습한 환경하에서의 접합 특성의 변화를 관찰하기 위하여 $85^{\circ}C$/85%RH 항온항습 조건하에서 각각 24, 72, 120, 168시간 동안 시효처리 한 후, Interconnections Packaging Circuitry (IPC) 규격에 의거하여 접합강도를 측정하였다. 시료의 전도층은 폭 3.2mm 길이 230mm의 패턴을 가지도록, 절연층은 폭 10mm, 길이 230mm으로 구성되었으며 이를 50.8mm/min의 박리 속도로 각 시편당 8회의 $90^{\circ}$ peel test를 실시하였다. 파면의 형상과 화학적 조성을 분석하기 위해 SEM (Scanning electron microscope)과 EDS (Energy-dispersive X-ray spectroscopy)를 사용하였으며, 파면의 조도 측정을 위해 AFM (Atomic force microscope)을 사용하였다. 또한 계면의 화학적 결합상태를 분석하기 위해 XPS (X-ray photoelectron spectroscopy)를 통해 파면을 관찰 분석하였다.

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Fabrication of Highly Conductive Yarn using Electroless Nickel Plating (무전해 니켈 도금법을 이용한 고성능 도전사의 제조)

  • Hong, So-Ya;Lee, Chang-Hwan;Kim, Joo-Yong
    • Textile Coloration and Finishing
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    • v.22 no.1
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    • pp.77-82
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    • 2010
  • Highly conductive yarn was successfully obtained using electroless nickel plating method with palladium activation. In the presence of palladium seed on surface of fibers as a catalyst, continuos nickel layer produced on surface of fibers by reducing $Ni${2+}$ ion in the electroless plating bath to $Ni^0$. It was found that the Pd-activation using $SnCl_2$ and $PdCl_2$ to deposit palladium seeds on the surface of fibers plays a key role in the subsequent electroless plating of nickel. It also found that electroless nickel plating on the fibers can induce the nickel-plated $ELEX^{(R)}$ fibers to improve the electrical conductivity of the fibers. The thickness of nickel coating layer on the Pd-activated $ELEX^{(R)}$ fibers and specific conductivity of the fiber were increased through electroless plating time. The temperature of nickel plating bath was very effective to enhance the nickel deposition rate.

A study on the Particulate Properties of Ti-Ni alloy Nanopowders Prepared by Levitational Gas Condensation Method (부양가스증발응축법으로 제조된 Ti-Ni 합금 나노분말의 특성 연구)

  • Han, B.S.;Uhm, Y.R.;Lee, M.K.;Kim, G.M.;Rhee, C.K.
    • Journal of Powder Materials
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    • v.13 no.6 s.59
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    • pp.396-400
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    • 2006
  • The Ti-Ni alloy nanopowders were synthesized by a levitational gas condensation (LGC) by using a micron powder feeding system and their particulate properties were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM) and Brunauer-Emmett-Teller (BET) method. The starting Ti and Ni micron powders $150{\mu}m$ were incorporated into the micron powder feeding system. An ingot type of the Ti-Ni ahoy was used as a seed material for the levitation and evaporation reactions. The collected powders were finally passivated by oxidation. The x-ray diffraction experiments have shown that the synthesized powders were completely alloyed with Ti and Ni and comprised of two different cubic and monoclinic crystalline phases. The TEM results showed that the produced powders were very fine and uniform with a spherical particle size of 18 to 32nm. The typical thickness of a passivated oxide layer on the particle surface was about 2 to 3 nm. The specific surface area of the Ti-Ni alloy nanopowders was $60m^2/g$ based on BET method.

Angle Sensors Based on Oblique Giant Magneto Impedance Devices

  • Kim, Do-Hun;Na, Ji-Won;Jeung, Won-Young
    • Journal of Magnetics
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    • v.14 no.1
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    • pp.42-46
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    • 2009
  • The measurement of external magnetic field orientation using Giant Magneto Impedance (GMI) sensors has been performed. A soft magnetic alloy of $Co_{30}Fe_{34}Ni_{36}$ was electroplated on a Si wafer with a CoFeNi seed layer. V-shaped microwire patterns were formed using a conventional photolithography process. An external magnetic field was generated by a rectangular AlNiCo permanent magnet. The reference direction was defined as the external magnetic field direction oriented in the middle of 2 GMI devices. As the orientation of the magnetic field deviated from the reference direction, variation in the field component along each device introduced voltage changes. It was found that, by taking the voltage difference between the left and right arms of the Vshaped device, the nonlinearity of each device could be significantly reduced. The fabricated angle sensor had a linear range of approximately $70^{\circ}$ and an overall sensitivity of approximately 10 mV.

Analysis of Ni/Cu Metallization to Investigate an Adhesive Front Contact for Crystalline-Silicon Solar Cells

  • Lee, Sang Hee;Rehman, Atteq ur;Shin, Eun Gu;Lee, Doo Won;Lee, Soo Hong
    • Journal of the Optical Society of Korea
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    • v.19 no.3
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    • pp.217-221
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    • 2015
  • Developing a metallization that has low cost and high efficiency is essential in solar-cell industries, to replace expensive silver-based metallization. Ni/Cu two-step metallization is one way to reduce the cost of solar cells, because the price of copper is about 100 times less than that of silver. Alkaline electroless plating was used for depositing nickel seed layers on the front electrode area. Prior to the nickel deposition process, 2% HF solution was used to remove native oxide, which disturbs uniform nickel plating. In the subsequent step, a nickel sintering process was carried out in $N_2$ gas atmosphere; however, copper was plated by light-induced plating (LIP). Plated nickel has different properties under different bath conditions because nickel electroless plating is a completely chemical process. In this paper, plating bath conditions such as pH and temperature were varied, and the metal layer's structure was analyzed to investigate the adhesion of Ni/Cu metallization. Average adhesion values in the range of 0.2-0.49 N/mm were achieved for samples with no nickel sintering process.

$CeO_2$ Single Buffer Deposition on RABiTS for SmBCO Coated Conductor

  • Kim, T.H.;Kim, H.S.;Ha, H.S.;Yang, J.S.;Lee, N.J.;Ha, D.W.;Oh, S.S.;Song, K.J.;Jung, Y.H.;Pa, K.C.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.180-181
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    • 2006
  • As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique 100nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $0.4{\mu}m$-thick SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-W substrate. Critical current of 118A/$cm^2$ was obtained for the SmBCO coated conductors.

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