$CeO_2$ Single Buffer Deposition on RABiTS for SmBCO Coated Conductor

  • Kim, T.H. (Korea Electrotechnology Research Institute) ;
  • Kim, H.S. (Korea Electrotechnology Research Institute) ;
  • Ha, H.S. (Korea Electrotechnology Research Institute) ;
  • Yang, J.S. (Korea Electrotechnology Research Institute) ;
  • Lee, N.J. (Korea Electrotechnology Research Institute) ;
  • Ha, D.W. (Korea Electrotechnology Research Institute) ;
  • Oh, S.S. (Korea Electrotechnology Research Institute) ;
  • Song, K.J. (Korea Electrotechnology Research Institute) ;
  • Jung, Y.H. (KAIST) ;
  • Pa, K.C. (Kyungpook national univ.)
  • Published : 2006.11.09

Abstract

As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique 100nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $0.4{\mu}m$-thick SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-W substrate. Critical current of 118A/$cm^2$ was obtained for the SmBCO coated conductors.

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