• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1149-1155
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• 2004

In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.1-9
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• 2003

In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.10-17
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• 2006

Model experiment was introduced to obtain the formation of a core/rim structure by only liquid phase reaction in Ti(C, N)-based cermet alloys. Infiltrated Ti(C, N)-Ni, $MO_2C-Ni$, and TaC-Ni cermets were bonded to sandwiched specimen by heat treatment $1450^{\circ}C$ for 5hr. With nitrogen addition, both (Ti, Mo) (C, N) and (Ti, Ta) (C, N) rim structure was nucleated around comer of cuboidal Ti(C, N) core. However, equilibrium shapes of(Ti, Mo) (C, N) and (Ti, Ta) (C, N) rim were different possibly due to the effect of interface energy. The core/rim and rim! binder interfaces were parallel to each other with TaC addition, while rotated to each other with $MO_2C$ addition.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.124-128
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• 1997

An attempt was made to understand the dissolution and reprecipitation behavior of the constituent phases such as TiC, TiN, and Ti(CN) in TiC-TiN-Ni system. During the liquid-phase sintering the TiC phase was found to dissolve preferentially in Ni binder. The solid-solution phase, Ti(CN), formed around the TiN phase, resulting in a core/rim structure. This result was reproduced when large TiC particles were used with fine TiN particles. The path for the microstructural change in TiC-TiN-Ni system was largely controlled by the difference in the interfacial energy of each phase with the liquid binder phase. The results were discussed with thermodynamic principles.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.107-108
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• 2006

The effect of WC or NbC addition on various properties of Ti(C0.7N0.3)-Ni cermets was investigated. The microstructure oj Ti(C0.7N0.3)-xWC-20Ni showed a typical core/rim structure, irrespective of the WC content, whereas the structure oj Ti(C0.7N0.3)-xNbC-20Ni was different and was dependent on the NbC content. The hardness (HV) and the fracture toughness (KIC) had a tendency to increase marginally, while the coercive force (HC) and the magnetic saturation $(4{\pi}{\sigma})$ decreased gradually with an increase in WC or NbC content in the systems studied. In addition, increasing WC content in Ti(C0.7N0.3)-xWC-20Ni system, decarburization was retarded, while denitrification was accelerated

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.45-48
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• 2004

본 논문은 니켈실리사이드 (Ni-Silicide)의 열안정성을 개선하기 위해서 Ti와 TiN capping 층을 이용한 새로운 구조 Ni/Ti/Ni/Tin 구조를 제안하였다. 계면특성과 열안정성을 향상시키기 위해 타이타늄(Ti)을 니켈(Nickel) 사이에 적용하고, 니켈 실리사이드 형성 시 산소와의 반응을 억제하여 실리사이드의 응집현상을 개선시키고자 TiN capping을 적용 하였다. 니켈 실리사이드의 형성온도에 따른 $NiSi_2$로의 상변이를 억제할 수 있었고, 열안정성 평가를 위한 $700^{\circ}C$, 30분간 고온 열처리에서도 제안한 구조로 니켈실리사이드의 단면특성과 19 % 정도 면저항 특성을 개선하였다.

• Journal of Surface Science and Engineering
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• v.30 no.1
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• pp.33-43
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• 1997

The effects of process parameters substrate such as substrate current and substrate temperature on the corrosion resistance of ion plated TiN film were investigated. TiN fims were deposited on speed steel on which Ti or Ni hed been previously evaporated. Dense TiN films could be obtained under higher substrate current(1A) and substrate temperature($500^{\circ}C$), whereas TiN films deposited with lower substances current(0.5A) and substrate temperature($300^{\circ}C$) showed porous structure. The corrosion resistances of high speed steel was considerably increased when dense TiN films had been formed on it. The effect of Ti and Ni interlayer on the increase of the corrosion resistance was also significant with dense TiN films, while there was little effect of interlayer on the corrosion resistance when TiN films were porous. the effect of interlayer on the corrosion resistance was more outstanding with Ti then with Ni, because Ti reacts more easily with oxygen to form an oxide layer, and it also shows higher resistance against chlorine containing corrosion media.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.667-670
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• 2003

Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1316-1322
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• 1998

The amount of VC and C/N ratio in Ti(CN) was varied to investigate the effect of VC addition on the mi-crostructural change in Ti(CN)-Ni system. As the amount of VC addition increases in Ti(C0.7N0.3)-20Ni sys-tem a complete solid solution was observed in Ti(C0.7N0.3)-20Ni-25VC system. It implies that the ratio of the dissolution rates of Ti(C0.7N0.3)to that of VC is nearly 2:1 at the sintering conditions used in this study. It was found from the experiments that the system composed of the Ti(C0.7N0.3) phase exhibits a rimless structure and relatively small amount of solid solution. That is among Ti(C0.7N0.3) phase exhibits a rimless structure and relatively small amount of solid solution. This is among Ti(C1-xNx) phases the dissolution rate of Ti(C0.3N0.7) is the lowest. Also fracture toughness(KIC) of the cermet was measured by indentation method. Attentions were paid to crack propagation path to look for a dominant fracture mode and to cor-relate it with fracture toughness values. The fracture toughness was relatively high with the addition of VC content. But the addition of a large VC content reduced the overall toughness of the cermet. This result is explained with the difference in fracture mode.