• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.160.2-160
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• 2003

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.30-30
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• 2008

Lead-free piezoelectric ceramics 0.97$(Na_{0.5}K_{0.5})NbO_3$-0.03Ba$(Ti_{1-x}Sn_x)O_3$ [NKN-BTS-x] ceramics doped with 1 mol% $MnO_2$ have been fabricated by a sintering technique with muffling. The $MnO_2$-doped NKN-BTS-x ceramics with x$\leq$0.2 have pure orthorhombic perovskite structure at room temperature. The dense microstructure was developed with grain growth as an increase of amount of Sn. Moreover, the addition of Sn was found to have a significant influence on piezoelectric properties. In particular, the $MnO_2$-doped NKN-BTS-0.1 ceramics showed improved piezoelectric properties of piezoelectric constant ($d_{33}$=145pC/N), relatively large electromechanical coupling factor ($k_p$=43%), dielectic constant (${\varepsilon}^T_{33}/{\varepsilon}_0$=676) dielectric loss (tan$\delta$=1.3%).

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.453-457
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• 2005

Piezoelectric properties of $Pb(Mn_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ ceramics were investigated with $Al_2O_3$ content $(0.0-1.0 wt\%)$. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with $Al_2O_3$, indicating the MPB (morphotropic phase boundary) composition of tetragonal structures. The highest sintered density of $7.8 g/cm^3$ was obtained for $0.2wt\%\;Al_2O_3-doped$ specimen. Grain size increased by doping $Al_2O_3$ up to $0.3 wt\%$, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping $Al_2O_3$ up to $0.2wt\%$, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in $O^{2-}$ ion sites and the substitution of $Al^{3+}$ ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.91-92
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• 2007

An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.245-251
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• 2000

Dielectric properties, piezoelectric properties and mechanical properties of NiO-doped Pb($(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$ ceramics were investigated. Powders, prepared by columbite precursor method, were cold pressed and sintered at temperature ranging from $1100^{\circ}C$ to $1250^{\circ}C$. Dielectric constant and piezoelectric constant increased with amount of NiO up to 1 mol% and then decreased with further addition of NiO. It seems that NiO acts as a sintering aid at the sintering temperatures of $1150^{\circ}C$. When the samples were sintered at temperature above $1200^{\circ}C$, however, both dielectric constant and electromechanical coupling factor decreased and mechanical quality coefficient increased with addition of NiO. Hardness and fracture toughness of PNN-PT-PZ increased with addition of NiO up to 1 mol%, and then decreased slightly with further addition of NiO. These results showed that dielectric properties, piezoelectric properties and mechanical properties of PNN-PT-PZ system seemed to be closely related with microstructural factors such as grain size, bulk density and the amount of second phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.124-129
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• 2007

Dielectric and piezoelectric properties of $0.57Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.43PbTiO_{3}$, which is the morphotropic phase boundary composition for the PSN-PT system, were investigated as a function of $Fe_{2}O_{3},\;Nb_{2}O_{5}\;and\;MnO_{2}$ addition 0 wt% to 0.9 wt%. The maximum dielectric constant of ${\varepsilon}_{33}/{\varepsilon}_{o}=2054$ and the minimum dielectric loss of $tan{\delta}=0.37\;%$ at room temperature were obtained at 0.1 wt% of $Fe_{2}O_{3}$ and 0.5 wt% of $MnO_{2}$ addition, respectively. With addition of 0.5 wt% $Nb_{2}O_{5}$ and $0.5\;wt%\;MnO_{2}$, the electromechanical coupling factor $k_{p}$ and mecanical quality factor $Q_{m}$ were significantly increased, respectively. The maximum electromechanical coupling factor $k_{p}=61.5\;%$ was obtained by addition of $Nb_{2}O_{5}$ and high mechanical quality factor $Q_{m}=919$ was obtained by addition of $MnO_{2}$. The $Q_{m}(=919)$ value is 3.3 times larger than that of non-doped 0.57PSN-0.43PT ceramics.