• Korea-Australia Rheology Journal
• /
• v.21 no.1
• /
• pp.59-69
• /
• 2009

The prediction of pressure drop for a droplet flow in a confined micro channel is presented using FE-FTM (Finite Element - Front Tracking Method). A single droplet is passing through 5:1:5 contraction - straight narrow channel - expansion flow domain. The pressure drop is investigated especially when the droplet flows in the straight narrow channel. We explore the effects of droplet size, capillary number (Ca), viscosity ratio ($\chi$) between droplet and medium, and fluid elasticity represented by the Oldroyd-B constitutive model on the excess pressure drop (${\Delta}p^+$) against single phase flow. The tightly fitted droplets in the narrow channel are mainly considered in the range of $0.001{\leq}Ca{\leq}1$ and $0.01{\leq}{\chi}{\leq}100$. In Newtonian droplet/Newtonian medium, two characteristic features are observed. First, an approximate relation ${\Delta}p^+{\sim}{\chi}$ observed for ${\chi}{\geq}1$. The excess pressure drop necessary for droplet flow is roughly proportional to $\chi$. Second, ${\Delta}p^+$ seems inversely proportional to Ca, which is represented as ${\Delta}p^+{\sim}Ca^m$ with negative m irrespective of $\chi$. In addition, we observe that the film thickness (${\delta}_f$) between droplet interface and channel wall decreases with decreasing Ca, showing ${\delta}_f{\sim}Ca^n$ Can with positive n independent of $\chi$. Consequently, the excess pressure drop (${\Delta}p^+$) is strongly dependent on the film thickness (${\delta}_f$). The droplets larger than the channel width show enhancement of ${\Delta}p^+$, whereas the smaller droplets show no significant change in ${\Delta}p^+$. Also, the droplet deformation in the narrow channel is affected by the flow history of the contraction flow at the entrance region, but rather surprisingly ${\Delta}p^+$ is not affected by this flow history. Instead, ${\Delta}p^+$ is more dependent on ${\delta}_f$ irrespective of the droplet shape. As for the effect of fluid elasticity, an increase in ${\delta}_f$ induced by the normal stress difference in viscoelastic medium results in a drastic reduction of ${\Delta}p^+$.

• Journal of IKEEE
• /
• v.17 no.1
• /
• pp.71-76
• /
• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.9
• /
• pp.638-643
• /
• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.729-734
• /
• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Nuclear Engineering and Technology
• /
• v.54 no.10
• /
• pp.3962-3973
• /
• 2022

Several critical heat flux (CHF) correlations including the look-up table in the MARS code have been assessed for the prediction of CHF in a downward-flow narrow rectangular channel. For the assessment, we built an experiment database that covers pressures between 1.01 and 39.0 bar, gap sizes between 1.09 and 6.53 mm, mass fluxes up to 25,772 kg/m²s, and under one-sided and two-sided heating conditions. The results of the assessment showed that the Kaminaga correlation has the best overall prediction compared to others. However, because the correlation uses global variables, such as inlet and outlet subcooling and total heat transfer area, it is difficult to use in a system code. A new CHF correlation is then proposed by replacing the global variables in the Kaminaga correlation with local ones and adding correction factors to consider the effect of gap size, mass flux, and the number of heating walls. Additional correction factor is added to consider the effect of inlet subcooling. It is shown that the new one is better than the Kaminaga correlation and it is easy to implement to any system code.

• Journal of Advanced Navigation Technology
• /
• v.11 no.1
• /
• pp.9-16
• /
• 2007

In this paper, the Bit Error Ratio (BER) performances of the D8PSK modulation schemes for VDL Mode-2 are analyzed according to the matched and unmatched cases of the channel filters. The carrier frequency and phase offset effects are analyzed with unmatched case. Generally in digital transmission techniques, the Root Raised Cosine filters which are used as channel filters are applied to both sides at transmitter and receiver in order to achieve no ISI, but in VDL Mode-2, the Raised Cosine Filter is used only in transmission section and the receiver section uses general low pass filter, therefore we could not achieve ISI reduction effects but can have better spectrum quality. From the simulation results, the error probability is increased slightly (1~2dB) with use of un-matched channel filter, we got the conclusions that carrier phase offset do not effect to bit error ratio, but the frequency offset effect is so serious. Finally, narrow band D8PSK modulation signals are generated by the use of Digital Up-Converter and then its features are compared with analog modulator.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.5
• /
• pp.1-7
• /
• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• Journal of Mechanical Science and Technology
• /
• v.15 no.7
• /
• pp.941-950
• /
• 2001

A study of counter-current two-phase flow in narrow rectangular channels has been performed. Two-phase flow regimes were experimentally investigated in a 760mm long and 100mm wide test section with 2.0 and 5.0mm gap widths. The resulting flow regime maps were compared with the existing transition criteria. The experimental data and the transition criteria of the models showed relatively good agreement. However, the discrepancies between the experimental data and the model predictions of the flow regime transition become pronounced as the gap width increased. As the gap width increased the transition gas superficial velocities increased. The critical void fraction for the bubbly-to-slug transition was observed to be about 0.25. The two-phase distribution parameter for the slug flow was larger for the narrower channel. The uncertainties in the distribution parameter could lead to a disagreement in slug-to-churn transition between the experimental findings and the transition criteria. For the transition from churn to annular flow the effect of liquid superficial velocity was found to be insignificant.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.12 no.4
• /
• pp.473-481
• /
• 2012

For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

• Nuclear Engineering and Technology
• /
• v.51 no.8
• /
• pp.1886-1896
• /
• 2019

Modern small modular nuclear reactors can be built on a barge in ocean, therefore, their flow characteristics depend upon the ocean motions. In the present research, effect of rolling motion on flow and friction characteristics of laminar flow through vertical and horizontal narrow channels has been studied. A computer code has been developed using MPS method for two-dimensional Navier-Stokes equations with rolling motion force incorporated. Numerical results have been validated with the literature and have been found in good agreement. It has been found that the impact of rolling motions on flow characteristics weakens with increase in flow rate and fluid viscosity. For vertical narrow channels, the time averaged friction coefficient for vertical channels differed from steady friction coefficient. Furthermore, increasing the horizontal distance from rolling pivot enhanced the flow fluctuations but these stayed relatively unaffected by change in vertical distance of channel from the rolling axis. For horizontal narrow channels, the flow fluctuations were found to be sinusoidal in nature and their magnitude was found to be dependent mainly upon gravity fluctuations caused by rolling.