• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2003.11a
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• pp.56-63
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• 2003

Micro/nano adhesion and friction properties of mixed self-assembled monolayer (SAM) with different chain length for MEMS application were experimentally studied. Many kinds of SAM having different spacer chains(C6, C10 and C18) and their mixtures (1:1) were deposited onto Si-wafer, where the deposited SAM resulted in the hydrophobic nature. The adhesion and friction properties between tip and SAM surfaces under nano scale applied load were measured using an atomic force microscope (AFM) and micro scale applied load were measured using ball-on-flat type micro-tribotester. Surface roughness and water wetting angles were measured with SPM (scanning probe microscope) and contact anglemeter. Results showed that wetting angles of mixed SAMs showed the similar value of pure SAMs. The coating surface morphology was increased as mixing of SAM. Nano adhesion and nano friction decreased as increasing of the spacer chain length and mixing of SAM. Micro friction was decreased as increasing of the spacer chain, but micro friction of mixed SAM showed the value between pure SAMs. Nano adhesion and friction mechanism of mixed SAM was proposed in a view of stiffness of spacer chain modified chemically and topographically.

• Journal of Information Display
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• v.11 no.1
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• pp.33-38
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• 2010

The propagation of cracks was quantitatively analyzed in $Al_2O_3$ ceramic using the mechanoluminescence (ML) of $SrAl_2O_4$:Eu,Dy. The bridging zones behind the crack tip were clearly detected in the crack path of $Al_2O_3$ within a realistic time frame. The magnitudes and shapes of the bridging stress distributions changed with the advancing cracks. They continued to change with the change in the applied load even after the cessation of crack propagation. Effective toughening then commenced, and the applied stress intensity factors dramatically increased up to ~50 MPa $\sqrt{m}$. The expected $K_{Tip}$ values based on the instantaneous bridging stress distributions obtained from the ML observations deviated greatly from those obtained from the measurement using the conventional crack tip lengths; rather, they support the results obtained when bridging tips were used in the quasidynamic crack propagations.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.1 s.244
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• pp.41-47
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• 2006

High resolution dopant profiling in semiconductor devices has been an intense research topic because of its practical importance in semiconductor industry. Although several techniques have already been developed. it still requires very expensive tools to achieve nanometer scale resolution. In this study we demonstrated a novel dopant profiling technique with nanometer resolution using very simple setup. The newly developed technique measures the thermoelectric voltage generated in the contact point of the SPM probe tip and MOSFET surface instead of electrical signals widely adopted in previous techniques like Scanning Capacitance Microscopy. The spatial resolution of our measurement technique is limited by the size of contact size between SPM probe tip and MOSFET surface and is estimated to be about 10 nm in this experiment.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.502-505
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• 2005

To overcome some of the limitations in the conventional photolithography technique, MC-SPL which has advantages such as flexibility and high speed was developed in the past. To make a fine pattern using MC-SPL, there are many variables to control, for example, applied load, scribing speed, chemical etching condition, and etc. In this work, the effect of contact load on the width of the pattern was investigated. The load not only influences the width of the pattern but it also affects the wear of the probe tip. It was found that it is beneficial to load the tip in two stages. Futhermore, the experimental results showed that the pattern width was more sensitive to the initial contact force.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.43-43
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• 2010

we have investigated the field emission characteristics of the CNT/TEOS hybrid thin films fabricated by a spray method. It is found that the CNT/TEOS hybrid emitters show high current density, low turn on field, and long-term emission stability compared to the CNT emitters. These efficient field emission characteristics of the CNT/TEOS hybrid emitters are attributed to the TEOS sol, acting as a protection layer of nanotube emitter by surrounding the nanotube tip as well as a binder material to enhance the adhesion of nanotube emitters to the substrate. Therefore, the CNT/TEOS hybrid emitters could be utilized as an alternative for the efficient and reliable field emitters.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.19-25
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• 2004

Pitch measurements of 150 nm one-dimensional grating standards were carried out using a contact mode atomic force microscopy with a high resolution three-axis laser interferometer. This measurement technique was named as the 'nano-metrological AFM'. In the nano-metrological AFM, three laser interferometers were aligned precisely to the end of an AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$ stabilized He-Ne laser at a wavelength of 633 nm. Therefore, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM could be used to directly measure the length standard. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement (GUM). The primary source of uncertainty in the pitch-measurements was derived from the repeatability of the pitch-measurements, and its value was about 0.186 nm. The average pitch value was 146.65 nm and the combined standard uncertainty was less than 0.262 nm. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.97-101
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• 2009

In the modem semiconductor industry, the progress that consumes the most capital and labor is cleansing process. Cleansing process is to remove impurities that can affect the operation of the device and deteriorate its function. Especially, Photoresist (PR) progress that etches the device always requires cleansing at the end of the progress. Also, HDI-PR (High-Dose Ion-implanted Photoresist) created from PR progress is difficult to remove. Thus, in modem IC cleansing, many steps of cleansing are used, including dry and wet cleansing. In this paper, we suggested to combine existing dry-cleansing and wet-cleansing, each represented by plasma cleansing and stripper solution, as Plasma Liquid-Vapor Activation (PLVA). This PLVA method enhances the effect of existing cleansing solution, and decreases the amount of solution and time required to strip. We stripped HDI-PR by activated solution and measured surface hardness and Young's modulus by Nano-indenter. Nano-indenter is the equipment that determines the hardness and the modulus of elasticity by indenting nano-sized tip with specific shape into the surface and measuring weight and z-axis displacement. We measured the change of surface hardness and Young's modulus before and after the cleansing. As a result, we found out that the surface hardness of the sample sharply decreased after the cleansing by plasma-activated PR stripper solution. It can be considered that if physical surface-cleansing process is inserted after this, more effective elimination of HDI-PR is possible.

• Resources Recycling
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• v.12 no.6
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• pp.38-46
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• 2003

In this study, nano-sized Ni-ferrite and $Fe_2$$O_3$＋NiO powder was fabricated by spray pyrolysis process in the condition of 1kg/$\textrm{cm}^2$ air pressure using the Fe-Ni complex waste acid solution generated during the manufacturing process of shadow mask. The average particle size of the produced powder was below 100 nm. The effects of the reaction temperature, the concentration of raw material solution and the nozzle tip size on the properties of powder were studied. As the reaction temperature increased from $800 ^{\circ}C$ to $1100^{\circ}C$, the average particle size of the powder increased from 40 nm to 100 nm, the structure of the powder gradually became solid, yet the distribution of the particle size appeared more irregular. Along with the increase of the reaction temperature, the fraction of the Ni-ferrite phase were also on the rise, and the surface area of the powder was greatly reduced. As the concentration of Fe in solution increased from 20g/l to 200g/l, the average particle size of the powder gradually increased from 30 nm to 60 nm, while the distribution of the particle size appeared more irregular. Along with the increase of the concentration of solution, tie fraction of the Ni-ferrite phase was on the rise, and the surface area of the powder was greatly reduced. Along with the increase of the nozzle tip size, the distribution of the particle size appeared more irregular, yet the average particle size of the powder showed no significant change. As the nozzle tip size increased from 1 mm to 2 mm, the fraction of the Ni-ferrite phase showed no significant change, while the surface area of the powder slightly reduced. As the nozzle tip size increased to 3 mm and 5 mm, the fraction of the Ni-ferrite phase gradually reduced, and the surface area of the powder slightly increased.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.161-169
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• 2004

In this study, we investigated fatigue crack growth behavior of laser welded sheet metal due to a single overload. Fatigue specimens were made using butt joint of cold rolled sheet metal that was welded by $CO_2$ laser. The fatigue crack propagation tests were performed in such a way that fatigue loading was parallel to the weld line while crack propagation was perpendicular to the weld line. Single overload was applied when fatigue crack tip was arrived near the weld line. The distances between the crack tip and the weld line at which a single overload was applied were 6, 4 and 2mm. The effect of specimen thickness and overload ratio on the fatigue behavior was determined. The plastic zone size of crack tip due to the single overload was determined from the finite element analysis. For investigating fatigue crack growth behavior, we used different thickness specimen 0.9mm and 2.0mm, and variable overload ratio applied fatigue crack propagation test. Also we used finite element analysis for investigating the plastic zone size of crack tip when single overload applied