• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.79-84
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• 2017

The solar cells should be protected from the moisture and oxygen in order to sustain the properties and reliability of the devices. In this research, we prepared the protection films on the flexible plastic substrates by spray coating method using organic-inorganic hybrid solutions. The protection characteristics were studied depending on the various process conditions (nozzle distance, thicknesses of the coatings, film structures). The organic-inorganic solutions for the protection film layer were synthesized by addition of $Al_2O_3$ ($P.S+Al_2O_3$) and $SiO_2$ ($P.S+SiO_2$) nano-powders into PVA (polyvinyl alcohol) and SA (sodium alginate) (P.S) organic solution. The optical transmittances of the protection film with the thicknesses of $5{\mu}m$ showed 91%. The optical transmittance decreased from 81.6% to 73.6% with the film thickness increased from $78{\mu}m$ to $178{\mu}m$. In addition, the protective films were prepared on the PEN (polyethylene naphthalate), PC (polycarbonate) single plastic substrates as well as the Acrylate film coated on PC substrate (Acrylate film/PC double layer), and $Al_2O_3$ film coated on PEN substrate ($Al_2O_3$ film/PEN double layer) using the $P.S+Al_2O_3$ organic-inorganic hybrid solutions. The optimum protection film structure was studied by means of the measurements of water vapor transmittance rate (WVTR) and surface morphology. The protective film on PEN/$Al_2O_3$ double layer substrate showed the best water protective property, indicating the WVTR value of $0.004gm/m^2-day$.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.