• Journal of the Korean Society for Precision Engineering
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• v.32 no.10
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• pp.911-916
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• 2015

In the nano/micro scale, material properties are dependent on the size-scale of a structure. However, conventional micro-scale tensile tests have limitations to obtain reliable values of nano-scale material properties owing to residual stress and elastic slippage in the gripping/aligning process. The indenter-driven nano-scale tensile test provides prominent advantages simple testing device, high-quality nano-scale metallic specimen with negligible residual stress. In this paper, two-types of specimens (a specimen with multi-testing parts and a specimen with a single-testing part) are discussed. Focused ion beam (FIB) is employed to fabricate a nano-scale specimen from a thin nickel film. Using the specimen with a single-testing part, we obtained a nano-scale stress-strain curve of electroplated nickel film.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.105-108
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• 2006

It has been issued to fabricate nano-scale patterns with large-scale in the field of digital display. Also, large-scale fabrication technology of nano pattern is very important not only for the field of digital display but also for the most of applications of the nano-scale patterns in the view of the productivity. Among the fabrication technologies, UV nano imprinting process is suitable for replicating polymeric nano-scale patterns. However, in case of conventional UV nano imprinting process using flat mold, it is not easy to replicate large areal nano patterns. Because there are several problems such as releasing, uniformity of the replica, mold fabrication and so on. In this study, to overcome the limitation of the conventional UV nano imprinting process, we proposed a continuous UV nano imprinting process using a pattern roll stamper. A pattern roll stamper that has nano-scale patterns was fabricated by attaching thin metal stamper to a roll base. A continuous UV nano imprinting system was designed and constructed. As practical examples of the process, various nano patterns with pattern size of 500, 150 and 50nm were fabricated. Finally, geometrical properties of imprinted nano patterns were measured and analyzed.

• Tribology and Lubricants
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• v.21 no.5
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• pp.209-215
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• 2005

Nano/micro friction with the contact area was studied on Si-wafer (100) and diamond-like carbon (DLC) film. Borosilicate balls of radii $0.32{\mu}m,\;0.5{\mu}m,\;1.25{\mu}m\;and\;2.5{\mu}m$ mounted on the top of AFM tip (NPS) were used for nano-scale contact and Soda Lime glass balls of radii 0.25mm, 0.5mm, 1mm were used for micro-scale contact. At nano-scale, the friction between ball and surface was measured with the applied normal load using an atomic force microscope (AFM), and at micro scale it was measured using ball-on flat type micro-tribotester. All the experiments were conducted at controlled conditions of temperature $(24\pm1^{\circ}C)$ and humidity $(45\pm5\%)$. Friction was measured as a function of applied normal load in the range of 0-160nN at nano scale and in the range of $1000{\mu}N,\; 1500{\mu}N,\;3000{\mu}N\;and\;4800{\mu}N$ at micro scale. Results showed that the friction at nano scale increased with the applied normal load and ball size for both kinds of samples. Similar behavior of friction with the applied normal load and ball size was observed for Si-wafer at micro scale. However, for DLC friction decreased with the ball size. This difference of in behavior of friction in DLC nano- and microscale was attribute to the difference in the operating mechanisms. The evidence of the operating mechanisms at micro-scale were observed using scanning electron microscope (SEM). At micro-scale, solid-solid adhesion was dominant in Silicon-wafer, while plowing in DLC. Contrary to the nano scale that shows almost a wear-less situation, wear was prominent at micro-scale. At nano- and micro-scale, effect of contact area on the friction was discussed with the different applied normal load and ball size.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.657-657
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• 2013

In-situ observations of nano-scale behavior of nanomaterials are very important to understand onthe nano-scale phenomena associated with phase change, atomic movement, electrical or optical properties, and even reactions which take place in gas or liquid phases. We have developed on the in-situ experimental technologies of nano-materials (nano-cluster, nanowire, carbon nanotube, and graphene, et al.) and their interactions (percolation of metal nanoclusters, inter-diffusion, metal contacts and phase changes in nanowire devices, formation of solid nano-pores, melting behavior of isolated nano-metal in a nano-cup, et al.) by nano-discovery membrane platform [1-4]. Between two microelectrodes on a silicon nitride membrane platform, electrical percolations of metal nano-clusters are observed with nano-structures of deposited clusters. Their in-situ monitoring can make percolation devices of different conductance, nanoclusters based memory devices, and surface plasmonic enhancement devices, et al. As basic evidence on the phase change memory, phase change behaviors of nanowire devices are observed at a nano-scale.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.413-417
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• 2004

Recent experiments have shown the 'size effects' in micro/nano scale. But the classical plasticity theories can not predict these size dependent deformation behaviors because their constitutive models have no characteristic material length scale. The Mechanism - based Strain Gradient(MSG) plasticity is proposed to analyze the non-uniform deformation behavior in micro/nano scale. The MSG plasticity is a multi-scale analysis connecting macro-scale deformation of the Statistically Stored Dislocation(SSD) and Geometrically Necessary Dislocation(GND) to the meso-scale deformation using the strain gradient. In this research we present a study of nano-indentation by the MSG plasticity. Using W. D. Nix and H. Gao s model, the analytic solution(including depth dependence of hardness) is obtained for the nano indentation , and furthermore it validated by the experiments.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.69-77
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• 2016

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with $80{\mu}m$ height is around 30 m for each pair of $10{\mu}m$ dia. electrode. Capacitance value of CNP bundle with $3{\mu}m$ length and $80{\mu}m$ height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2003.09a
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• pp.87-90
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• 2003

This research examines the feasibility of using laboratory-synthesized nano scale zero-valent iron particles to remove arsenic from aqueous phase. Batch experiments were performed to determine arsenic sorption rates as a function of the nano scale zero-valent iron solution concentration. Rapid adsorption of arsenic was achieved with the nano scale zero-valent iron. Typically 1 mg $L^{-1}$ arsenic (III) was adsorbed by 5 g $L^{-1}$ nano scale zero-valent iron below the 0.01 g $L^{-1}$ concentration within 7min. The kinetics of the arsenic sorption followed pseudo-first-order reaction kinetics. Observed reaction rate constants ( $K_{obs}$) varied between 11.4 to 129.0 $h^{-1}$ with respect to different concentrations of nano scale zero-valent iron. A variety of analytical techniques were used to study the reaction products including HGAAS (hydride generator atomic adsorption spectrophotometer), SEM (scanning electron microscopy) and TEM (transmission electron microscopy). Our experimental results suggest novel method for efficient removal of arsenic Iron groundwater.r.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• The Journal of Engineering Research
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• v.6 no.2
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• pp.5-10
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• 2004

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.5 no.2
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• pp.109-112
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• 2007

The possibility and limitation of one dimensional nano scale electron shielder is briefly discussed. A Nano scale electron shielder will reduce the weight and size of shielding materials. However, practical application still requires further research. In this work, we discuss general problems related to nano scale electron shielder, by taking an arbitrary one dimensional potential barrier as an example.