• Advances in nano research
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• v.2 no.4
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• pp.211-217
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• 2014

The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.880-884
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• 2011

ZnO nanorods were grown by hydrothermal method. Two kinds of seed layers, Au film and island seed layers were prepared to investigate the effect of seed layer on ZnO nanorods. The ZnO nanorod on Au island seed layer has more unifom diameter and higher density compared to that of ZnO nanorod on Au film seed layer. The ZnO nanorods on Au island seed layer were annealed at various temperatures ranging from 300 to $850^{\circ}C$. The pinholes at the surface of the ZnO nanorods is formed as the annealing temperature is increased. It is noted that the pyramid structure on the surface of ZnO nanorod is observed at $850^{\circ}C$. The intensity of ZnO (002) diffraction peak in X-ray diffraction pattern and intensity of near band edge emission (NBE) peak in photoluminescence (PL) are increased as the ZnO nanorods were annealed at the temperature of $300^{\circ}C$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.4
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• pp.7-12
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• 2014

A transparent poly methyl methacrylate (PMMA) optical micro-pyramid array-pattern is designed and fabricated using an injection modeling technique. The device's optical characteristics are tested and analyzed theoretically. In the optical pattern generated using the fabricated PMMA pattern, the components, due to not only refraction but also diffraction, are observed simultaneously. Wave optic modeling and analysis reveals that the energy ratio between the diffraction and refraction in the optical pattern are dependent on the critical dimension of the optical pattern such that the refraction and diffraction tend to be directly and inversely proportional to the pattern dimension, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.162-162
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• 2002

• Current Photovoltaic Research
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• v.5 no.1
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• pp.25-27
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• 2017

Nanoscale textured black silicon has attracted intensive attention due to its great potential as applications in multicrystalline silicon-based solar cells. It absorbs sunlight over a broad range of wavelengths but introduces large recombination centers, non-uniform doping into cell. In this study, we present a metal-assisted chemical etching technique plus alkaline etching process to fabricate nanoscale pyramid structures with optimized condition. To make the structures, silver nanoparticles-loaded mc-Si wafer was submerged into $H_2O_2/HF$ solution first for nanohole texturing the wafer and textured wafer etched again with KOH solution for making nanoscale pyramid structures. The average reflectivity (350-1050 nm) is about 8.42% with anti-reflection coating.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.12
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• pp.1139-1143
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• 2007

A simple method for the fabrication of 3D micro-nano hybrid patterns was presented. In conventional fabrication methods of the micro-nano hybrid patterns, micro-patterns were firstly fabricated and then nano-patterns were formatted on the micro-patterns. Moreover, these micro-nano hybrid patterns could be fabricated on the flat substrate. In this paper, we suggested the fabrication method of 3D micro-nano hybrid patterns using micro-indentation on the anodized aluminum substrate. Since diameter of the hemispherical nano-pattern can be controlled by electrolyte and applied voltage in the anodizing process, we can easily fabricated nano-patterns of diameter of loom to 300nm. Nano-patterns were firstly formatted on the aluminum substrate, and then micro-patterns were fabricated by deforming the nano-patterned aluminum substrate. Hemispherical nano-patterns of diameter of 150nm were fabricated by anodizing process, and then micro-pyramid patterns of the side-length of $50{\mu}m$ were formatted on the nano-patterns using micro-indentation. Finally we successfully replicated 3D micro-nano hybrid patterns by hot-embossing process. 3D micro-nano hybrid patterns can be applied to nano-photonic device and nano-biochip application.

• Journal of Powder Materials
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• v.22 no.3
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• pp.169-174
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• 2015

The optical film for light luminance improvement of BLU that is used in LCD/LED and retro-reflective film is used as luminous sign consist of square and triangular pyramid structure pattern based on V-shape micro prism pattern. In this study, we analyzed machining characteristics of Cu-plated flat mold by shaping with diamond tool. First, cutting conditions were optimizing as V-groove machining for the experiment of micro prism structure mold machining with prism pattern shape, cutting force and roughness. Second, the micro prism structure such as square and triangular pyramid pattern were machined by cross machining method with optimizing cutting conditions. Burr and chip shape were discussed with material properties and machining method.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.47-47
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• 2011

There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.