• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.55-55
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• 2015

Today, engineers are facing new set of challenges that are quite different from the conventional ones. Information technologies are rapidly commoditizing while the paths beyond the current roadmaps became uncertain as various technologies have been pushed to their limits. Along with these changes in IT ecosystems, grand challenges such as global security, health, sustainability, and energy increasingly require trans-disciplinary solutions that go beyond the traditional arenas in STEM (Science, Technology, Engineering and Mathematics). Addressing these needs is shifting engineering education and research to a new paradigm where the emphasis is placed on the consilience for holistic and system level understanding and the convergence of technology with AHSD (arts, humanities, social science, and design). At the center of this evolutionary convergence, nanotechnologies are enabling novel functionalities such as bio-compatibility, flexibility, low power, and sustainability while on a mission to meet scalability and low cost for smart electronics, u-health, sensing networks, and self-sustainable energy systems. This talk introduces the efforts of convergence based on the emerging nano technology tool sets in the newly launched School of Integrated Technology and the Yonsei Institute of Convergence Technology at Yonsei International Campus. While the conventional devices have largely depended upon the inherent material properties, the newer devices are enabled by nanoscale dimensions and structures in increasingly standardized and scalable fabrication platform. Localized surface plasmon resonance in 0 dimensional nano particles and structures leads to subwavelength confinement and enhanced near-field interactions enabling novel field of metal photonics for sensing and integrated photonic applications [1,2]. Unique properties offered by 1 dimensional nanowires and 2 dimensional materials and structures can enable novel electronic, photonic, nano-bio, and biomimetic applications [3-5]. These novel functionalities offered by the emerging nanotechnologies are continuously finding pathways to be part of smart systems to improve the overall quality of life.

• 전기전자학회논문지
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• 제22권2호
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• pp.420-426
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• 2018

가까운 미래에, 전자의 ballastic 혹은 near-ballastic 이동이 가능한 CNT(Carbon NanoTube)를 활용한 CNTFET(Carbon NanoTube Field Effect Transistor)은 현재의 실리콘 기반 트랜지스터를 교체할 유력한 후보 중 하나로 고려되고 있다. 고성능의 CNTFET으로 대규모 집적회로를 구현하기 위해서는 semiconducting CNT가 CNTFET 안에 동일한 간격과 높은 밀도로 정렬되어 배치되어야 하지만, CNTFET 공정의 미성숙으로, CNTFET 안의 CNT는 불규칙하게 배치하게 되고, 현존하는 HSPICE 라이브러리 파일은 불규칙한 CNT 배치에 의한 성능의 변화를 회로 레벨에서 평가할 수 있는 기능을 지원하지 않는다. 이러한 성능의 변화를 평가하기 위해서 선형 프로그래밍을 활용한 방법이 과거에 제안되었으나, CNTFET의 전류와 게이트 커패시턴스를 계산하는 과정에서 오차가 발생할 수 있는 문제점이 있다. 본 논문에서는 언급한 오차가 발생되는 이유에 대해서 자세히 논하고, 이 오차를 줄일 수 있는 새로운 방법을 제시하고자 한다. 시뮬레이션 검토 결과, 새롭게 제시된 방법이 기존 방법의 오차, 7.096%를 3.15%까지 줄일 수 있음을 보이고 있다.

• Journal of Plant Biotechnology
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• 제40권1호
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• pp.9-17
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• 2013

Ran is a small GTP-binding protein that binds and subsequently hydrolyzes GTP. The functions of Ran in nuclear transport and mitotic progression are well conserved in plants and animals. In animal cells, stress treatments cause Ran relocalization and slowing of nuclear transport, but the role of Ran proteins in plant cells exposed to stress is still unclear. We have therefore compared Ran genes from three EST libraries construed from different cell types of sweetpotato and the distribution pattern of Ran ESTs differed according to cell type. We further characterized two IbRan genes. IbRan1 is a specific EST to the suspension cells and leaf libraries, and IbRan2 is specific EST to the root library. IbRan1 showed 94.6 % identity with IbRan2 at the amino acid level, but the C-terminal region of IbRan1 differed from that of IbRan2. These two genes showed tissue-specific differential regulation in wounded tissues. Chilling stress induced a similar expression pattern in both IbRan genes in the leaves and petioles, but they were differently regulated in the roots. Hydrogen peroxide treatment highly stimulated IbRan2 mRNA expression in the leaves and petioles, but had no significant effect on IbRan1 gene expression. These results showed that the transcription of these two IbRan genes responds differentially to abiotic stresses and that they are subjected to tissue-specific regulation. Plant Ran-type small G-proteins are a multigenic family, and the characterization of each Ran genes under various environmental stresses will contribute toward our understanding of the distinctive function of each plant Ran isoform.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.401-409
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• 2013

Numerical analysis on RF (Radio-Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by RF thermal plasma. For this purpose, the behaviors of Ni metal particles injected into RF plasma torch were investigated according to their diameters ($1{\sim}100{\mu}m$), RF input power (6 ~ 12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of $100{\mu}m$ can be completely evaporated at relatively low power level of 10 kW during its flight of RF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using RF thermal plasmas.

• 공업화학
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• 제30권4호
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• pp.487-492
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• 2019

주름 개선을 위한 활성물질인 아데노신의 경피 투과를 위해 나노 플렉시블 베시클에 포집을 시도하였다. 나노 플렉시블 베시클은 인지질, 에탄올, lysolecithin으로 구성되는데, 수화 과정에서 형성된 액정 상을 물속에 분산시켜 만드는 액정형 베시클이다. 본 연구에서는 베시클 입자크기에 영향을 미치는 요인을 알아보기 위하여 실험계획법 중 하나인 다구찌 방법을 적용하였다. 다구찌 직교 배열을 활용하여 베시클 입자크기에 대한 망소 특성의 S/N 비를 산출하였다. 베시클 구성성분에서 에탄올과 lysolecithin 비율, 수화 과정에서 투입되는 수용액 양 등이 베시클 입자크기에 큰 영향을 미치는 주요 인자들이고, ANOVA 분석을 통해 이들 인자가 신뢰수준 95%에서 유의함을 확인하였다.

• 한국진공학회지
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• 제19권4호
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• pp.293-299
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• 2010

수열합성법으로 실리콘 (111) 기판 위에 산화아연 나노막대를 성장하였다. 산화아연 나노막대를 성장하기 전, 실리콘 기판에 스핀코팅법으로 씨앗층을 성장하였다. 산화아연 나노막대는 오토클레이브(autoclave)로 $140^{\circ}C$에서 6시간 동안 성장하였고, 아르곤 분위기에서 300, 500, $700^{\circ}C$의 온도로 20분 동안 열처리하였다. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL)를 이용하여 열처리한 산화아연 나노막대의 구조적, 광학적 특성을 분석하였다. 모든 산화아연 나노막대 시료에서 c-축 배향성을 나타내는 강한 ZnO (002) 회절 피크와 약한 ZnO (004) 회절 피크가 나타났다. 열처리 온도가 증가함에 따라 산화아연 나노로드의 residual stress는 compressive에서 tensile로 변하였다. Hexagonal 형태의 산화아연 나노로드를 관찰하였다. 산화아연 나노로드의 PL 스펙트럼은 free-exciton recombination에 의해 3.2 eV에서 좁은 near-band-edge emission (NBE) 피크와 산화아연 나노막대의 결함에 의해 2.12~1.96 eV에서 넓은 deep-level emission (DLE) 피크가 나타났다. 산화아연 나노막대를 열처리함에 따라, NBE 피크의 세기는 감소하였고 DLE 피크는 열처리에 의해 발생한 산소 관련 결함에 의하여 적색편이 하였다.

• 한국결정성장학회지
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• 제17권6호
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• pp.256-263
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• 2007

For $P_B=50Torr,\;P_T=5401Torr,\;T_S=450^{\circ}C,\;{\Delta}T=20K$, Ar=5, Pr=3.34, Le=0.01, Pe=4.16, Cv=1.05, adiabatic and linear thermal profiles at walls, the intensity of solutal convection (solutal Grashof number $Grs=7.86{\times}10^6$) is greater than that of thermal convection (thermal Grashof number $Grt=4.83{\times}10^5$) by one order of magnitude, which is based on the solutally buoyancy-driven convection due to the disparity in the molecular weights of the component A ($Hg_2Cl_2$) and B (He). With increasing the partial pressure of component B from 20 up to 800 Torr, the rate is decreased exponentially. It is also interesting that as the partial pressure of component B is increased by a factor of 2, the rate is approximately reduced by a half. For systems under consideration, the rate increases linearly and directly with the dimensionless Peclet number which reflects the intensity of condensation and sublimation at the crystal and source region. The convective transport decreases with lower g level and is changed to the diffusive mode at $0.1g_0$. In other words, for regions in which the g level is $0.1g_0$ or less, the diffusion-driven convection results in a parabolic velocity profile and a recirculating cell is not likely to occur. Therefore a gravitational acceleration level of less than $0.1g_0$ can be adequate to ensure purely diffusive transport.

• 열처리공학회지
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• 제36권3호
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• pp.128-136
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• 2023

In this study, the effects of heat treatment on the nano-scale creep behavior of CoCrFeMnNi high-entropy alloy (HEA) processed by high-pressure torsion (HPT) was investigated through nanoindentation technique. Nanoindentation experiments with a Berkovich indenter were performed on HPT-processed alloy subjected to heat treatment at 450℃, revealing that the hardness of the HPT-processed alloy (HPT sample) significantly increased with the heat treatment time. The heat treatment-induced microstructural change in HPT-processed alloy was analyzed using transmission electron microscopy, which showed the nano-sized Cr-, NiMn-, and FeCo-rich phases were formed in the HPT-processed alloy subjected to 10 hours of heat treatment (HPT+10A sample). To compare the creep behavior of HPT and HPT+10A samples, constant load nanoindentation creep experiments were performed using spherical indentation indenters with two different radii. It was revealed that the predominant mechanism for creep highly depended on the applied stress level. At low stress level, both HPT and HPT+10A samples were dominated by Coble creep. At high stress level, however, the mechanism transformed to dislocation creep for HPT sample, but continued to be Coble creep for HPT+10A sample, leading to higher creep resistance in the HPT+10A sample.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.26-27
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• 2006

To develop tera-bit level SONOS flash memories, SONOS unit memory and 64 bit flash arrays are fabricated. The unit cells have both channel length and width of 30nm. The NAND & NOR arrays are fabricated on SOI wafer and patterned by E-beam. The unit cells represent good write/erase characteristics and reliability characteristics. SSL-NOR array have normal write/erase operation. These researches are leading the realization of Tera-bit level non-volatile nano flash memory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.375-375
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• 2012

Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.