• 한국재료학회지
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• 제20권5호
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• pp.262-266
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• 2010

ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.

• 한국재료학회지
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• 제17권7호
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• pp.347-351
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• 2007

Vertical interconnect technology called 3D stacking has been a major focus of the next generation of IC industries. 3D stacked devices in the vertical dimension give several important advantages over conventional two-dimensional scaling. The most eminent advantage is its performance improvement. Vertical device stacking enhances a performance such as inter-die bandwidth improvements, RC delay mitigation and geometrical routing and placement advantages. At present memory stacking options are of great interest to many industries and research institutes. However, these options are more focused on a form factor reduction rather than the high performance improvements. In order to improve a stacked device performance significantly vertical interconnect technology with wafer level stacking needs to be much more progressed with reduction in inter-wafer pitch and increases in the number of stacked layers. Even though 3D wafer level stacking technology offers many opportunities both in the short term and long term, the full performance benefits of 3D wafer level stacking require technological developments beyond simply the wafer stacking technology itself.

• The Plant Pathology Journal
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• 제22권3호
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• pp.295-302
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• 2006

The present study addressed the efficacy of nanosized silica-silver for controlling plant pathogenic microorganisms. The nanosized silica-silver consisted of nano-silver combined with silica molecules and water soluble polymer, prepared by exposing a solution including silver salt, silicate and water soluble polymer to radioactive rays. The nanosized silica-silver showed antifungal activity against the tested phytopathogenic fungi at 3.0 ppm with varied degrees. In contrast, a number of beneficial bacteria or plant pathogenic bacteria were not significantly affected at 10 ppm level but completely inhibited by 100 ppm of nanosized silicasilver. Among the tested plant pathogenic fungi, the new product effectively controlled powdery mildews of pumpkin at 0.3 ppm in both field and greenhouse tests. The pathogens disappeared from the infected leaves 3 days after spray and the plants remained healthy thereafter. Our results suggested that the product developed in this study was effective in controlling various plant fungal diseases.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.26-29
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.168-171
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• 2016

There has been growing interest and rapid development in transparent electrode films, which are flexible and light and used in mobile, simple information, and electronic devices, and based on recent advancements in nano technology, information technology, and display technology. In particular, studies on developing such films with both high conductivity and high transmittance of visible rays are highly in demand for commercialization. In this study, transparent electrode films were developed for IT using micro patterns that show sheet resistance less than 10 Ω/□, adhesive strength more than 98%, and light transmittance more than 90%. The results of applying a surface emission gradient minimization (Honey Comb) technology to the films was the verification of the sheet resistance, adhesive strength, and light transmittance satisfying the target level of this study through Imprinting and Remolding processes.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.178-181
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• 2016

In this study a coating experiment was performed to fabricate blue light cut films, which represent a 390~430 nm cut off rate of more than 40% and a transmittance rate of more than 90%, using a roll-to-roll nano micro coating system. The study also analyzed the characteristics of the blue light cut films. Thus, the hardness, which is more than 3H, is ensured through fabricating films using a Sol-Gel process that will determine the proper hardness level. Also, the experiment shows excellent results by cutting blue light through a mixing blue light powder.

• 마이크로전자및패키징학회지
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• 제24권3호
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• pp.1-6
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• 2017

As the performance and density of IC devices increase, especially the clock frequency increases, power grid network integrity problems become more challenging. To resolve these power integrity problems, the use of passive devices such as resistor, inductor, and capacitor is very important. To manage the power integrity with little noise or ripple, decoupling capacitors are essential in electronic packaging. The decoupling capacitors are classified into voltage regulator capacitor, board capacitor, package capacitor, and on-chip capacitor. For next generation packaging technologies such as 3D packaging or wafer level packaging on-chip MIM decoupling capacitor is the key element for power distribution and delivery management. This paper reviews the use and necessity of on-chip decoupling capacitor.

• 세라미스트
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• 제21권3호
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• pp.283-292
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• 2018

Here, we introduce various type of inorganic nanostructure synthesized with functional nanoparticles and silica. From two decades ago, functional inorganic nanoparticles have been synthesized and highlighted, now we moved to next level of wet-chemical synthesis. By integrating functional nanoparticles with silica, we were able to synthesize multi-functional nanostructure, which expand the applications of nanoparticles to catalyst, drug carrier, sensors. In this context, silica has been spotlighted due to its versatility. Silica has highly biocompatible, relatively transparent and stable under harsh conditions. Thus it can be used as good supporter to synthesize complex multi-functional nanostructure when mixed with other functional nanoparticles. A various shape of complex nanostructures have been synthesized including core-shell type, yolk-shell type and janus type etc. In this paper, we have described the purposes of synthesizing silica noncomplex and various case studies for biomedical applications and self-assembly.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.453-458
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• 2004

A capacitate sensor is a proper device for measuring high small displacement. General design parameters and procedure are discussed and a test sensor was built to have a measuring range of 100$\mu\textrm{m}$ and a sensitivity about 30nm. This sensor has too opposing electrode of comparably large area and has nominal gap distance about 150$\mu\textrm{m}$. So as to achieve a nano order displacement sensitivity, both sensor and target system have to be considered. This is important for the sensitivity can be achieved by minimizing a system total noise level in electronic type sensor application. Typical performance of the developed sensor is demonstrated in precision moving stage having 0.1$\mu\textrm{m}$ moving resolution.