• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.97.2-97.2
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• 2018

This study formed a hard TiAlSiWN coating layer using Ti, Al, Si and W raw powders that were mechanically alloyed and refined. The TiAlSi and TiAlSiW coating targets were fabricated using a single PCAS process in a short time with the optimal sintering conditions. The coating targets were deposited on the WC substrate by forming coating layers using TiAlSiN and TiAlSiWN nitride nano-composite structures with an AIP process. The properties of the nitride nano-composite coating layers were compared according to the addition of W. The microstructure of the nitride nano-composite coating layer was analyzed, focusing on the distribution of the crystalline phases, amorphous phases ($Si_3N_4$), and growth orientation of the columnar crystal depending on the addition of W. The mechanical properties of the coating layers were exhibited a hardness of approximately $3,000kg/mm^2$ and adhesion of about 117.77N in the TiAlSiN. In particular, the TiAlSiWN showed excellent properties with a hardness of more than $4,300kg/mm^2$ and an adhesion of about 181.47N.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1001-1006
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• 2005

A new fabrication method is proposed to form the stacked polysilicon gate by nitridation in $N_2$ atmosphere using conventional LP-CVD system. Two step stacked layers with an amorphous layer on top of a polycrystalline layer as well as three step stacked layers with polycrystalline films were fabricated using the proposed method. SIMS profile showed that the proposed method would successfully create the nitrogen-rich layers between the stacked polysilicon layers, thus resulting in effective retardation of dopant diffusion. It was observed that the dopants in stacked films were piled-up at the interface. TEM image also showed clear distinction of stacked layers, their plane grain size and grain mismatch at interface layers. Therefore, the number of stacked polysilicon layers with different crystalline structures, interface position and crystal phase can be easily controlled to improve the device performance and reliability without any negative effects in nano-scale CMOSFETs.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.373-376
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• 2006

[ $Ba(Mg_{1/3}Ta_{2/3})O_3$ ] nanoparticles were synthesized in water solution under mild temperature and pressure conditions by precipitation from $Ba(NO_3),\;Mg(NO_3)_2{\cdot}6H_2O\;and\;TaCl_5$ with aqueous potassium hydroxide. The average size and distribution of the synthesized $Ba(Mg_{1/3}Ta_{2/3})O_3$ nanoparticles were below 100 nm and broad, respectively. The phase of synthesized particles was crystalline reacted at $170^{\circ}C$ for 4 h. The characterization of $Ba(Mg_{1/3}Ta_{2/3})O_3$ nanoparticles were studied using XRD, SEM, and TEM.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.105-110
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• 2008

Process of the hydroxyapatite (HA) formation on bioactive titanium metal prepared by NaOH treatment in a modified-simulated body fluid (mSBF) containing bovine serum albumin (BSA) was investigated by high resolution transmission electron microscope attached with energy dispersive X-ray spectrometer (EDX). The amorphous titanate, which was formed on titanium surface by NaOH treatment, combined with the calcium ions in the liquid to form an amorphous calcium titanite. With increasing of soaking time in the liquid, an amorphous calcium titanite combined with the phosphate ions to form an amorphous calcium phosphate with low Ca/P atomic ratio, and it grows as aggregates of plate (or needle)-like substance on titanium surface. The crystalline apatite layers, which are needle-shaped with the c axis parallel to the long axis, are formed in an amorphous calcium phosphate with further increase in soaking time. The formation of needle-shaped apatite layers can be explained by electrostatic effects and difference of concentration between calcium, phosphate, and albumin ions.

• Advances in nano research
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• v.10 no.3
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• pp.211-219
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• 2021

The evaluation of the corrosion resistance of titanium with a TiO2 nanotubes top layer was carried out (TiO2 NT). These nanostructures were evolved into anatase nanoparticles without heat treatment in an aqueous medium, which is a novel phenomenon. This work analyzes the layer between the nanotube bottom and the substrate, which is thin and still susceptible to corrosion. The bottom of TiO2 nanotubes having Fluor resulting from the synthesis process changed between amorphous to crystalline anatase with a crystallite size of about 4 nm, which influenced the corrosion rates. Four kinds of samples were evaluated. A) NT by Ti anodizing; B) NTSB for Ti plates, either modifying its surface or anodizing the modified surface; C) NT-480 for anodized Ti and heat-treated (480℃) for reaching the anatase phase; D) NTSB-480 for Ti plates, first, modifying its surface using sandblast, after that, anodizing the modified surface, and finally, heat-treated to 480℃ to compare with samples having induced crystallization and passivation. Four electrochemical techniques were used to evaluate the corrosion rates. The surfaces having TiO2 nanotubes with a sandblast pre-treatment had the highest resistance to corrosion.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Journal of Powder Materials
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• v.13 no.6 s.59
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• pp.396-400
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• 2006

The Ti-Ni alloy nanopowders were synthesized by a levitational gas condensation (LGC) by using a micron powder feeding system and their particulate properties were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM) and Brunauer-Emmett-Teller (BET) method. The starting Ti and Ni micron powders $150{\mu}m$ were incorporated into the micron powder feeding system. An ingot type of the Ti-Ni ahoy was used as a seed material for the levitation and evaporation reactions. The collected powders were finally passivated by oxidation. The x-ray diffraction experiments have shown that the synthesized powders were completely alloyed with Ti and Ni and comprised of two different cubic and monoclinic crystalline phases. The TEM results showed that the produced powders were very fine and uniform with a spherical particle size of 18 to 32nm. The typical thickness of a passivated oxide layer on the particle surface was about 2 to 3 nm. The specific surface area of the Ti-Ni alloy nanopowders was $60m^2/g$ based on BET method.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.359-359
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• 2011

This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.142-147
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• 2010

Nano-sized $BaNd_2Ti_5O_{14}$ powders were prepared by the spray pyrolysis process. Sucrose used as the organic additive enabled the formation of nano-sized $BaNd_2Ti_5O_{14}$ powders. The powders prepared from the spray solution without sucrose had a spherical shape, dense structure and micron size before and after calcination. However, the precursor powders prepared from the spray solution with sucrose had a large size, and hollow and porous morphology. The precursor powders had an amorphous crystal structure because of the short residence time of the powders inside the hot wall reactor. The complete decomposition of sucrose did not occur inside the hot wall reactor. Therefore, the precursor powders obtained from the spray solution with sucrose of 0.5M had a carbon content of 39.2wt.%. The powders obtained from the spray solution with sucrose of 0.5M had a slightly aggregated structure of nano-sized primary powders of $BaNd_2Ti_5O_{14}$ crystalline phase after calcination at $1000^{\circ}C$. The calcined powders turned into nano-sized $BaNd_2Ti_5O_{14}$ powders after milling. The mean size of the $BaNd_2Ti_5O_{14}$ powders was 125 nm.