• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.48-52
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• 1998

We fabricated the newly proposed nano structure memory with SOI edge channel and a nano dot. The width of the edge channel of this device, which uses the side wall as a channel and has a nano dot on this channel region, was determined by the thickness of the recessed top-silicon layer of SOI wafer. The size of side-wall nano dot was determined by the RIE etch and E-Beam lithography. The I$_{d}$-V$_{d}$, I$_{d}$-V$_{g}$ characteristics of the devices without nano dots and memory characteristics of the devices with nano dots were obtained, where the voltage scan was done between -20 V and 14 V and the threshold voltage shift was about 1 V.t 1 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.55-60
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• 2009

The channel backscattering coefficient and injection velocity have been extracted experimentally in 65nm MOSFETs. Thanks to an experimental extraction methodology taking into account multi-subband population, we demonstrate that the short channel ballistic efficiency is slightly greater than long channel ballistic efficiency.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.9
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• pp.910-914
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• 2007

We present a simple and an inexpensive method for the fabrication of a nano-fluidic filter and a nano-pore micromixer using self-assembly of nano-spheres and surface tension. Colloid-plug was formed by surface tension of liquid in a microchannel to fabricate nanofluidic filter. When colloid is evaporated, nano-spheres in a colloid are orderly stacked by a capillary force. Orderly stacked nano-spheres form 3-D nano-mesh which can be used as a mesh structure of a fluidic filter. We used silica nano-sphere whose diameter is $567{\pm}85nm$, and silicon micro-channel of $50{\mu}m$-diameter. Fabricated nano-fluidic filter in a micro-channel has median pore diameter of 158nm which was in agreement with expected diameter of the nano-pore of $128{\pm}19nm$. A nano-pore micromixer consists of $200\;{\mu}m-wide,\;100\;{\mu}m-deep$ micro-channel and self-assembled nano-spheres. In the nano-pore micromixer, two different fluids had no sooner met together than two fluids begin to mix at wide region. From the experimental study, we completely apply self-assembly of nano-spheres to nano-fluidic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.354-355
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• 2008

The sensitivity and sensing margin of SOI(silicon on insulator) nano-wire BioFET(field effect transistor) were investigated by using back-gate bias. The channel conductance modulation was affected by doping concentration, channel length and channel width. In order to obtain high sensitivity and large sensing margin, low doping concentration, long channel and narrow width are required. We confirmed that the electrical sensing by back-gate bias is effective method for evaluation and optimization of bio-sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.33-33
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• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.10-15
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• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.3
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• pp.113-117
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• 2019

The effects of severe plastic deformation and heat treatment on the mechanical properties of Al 5052 and 6005 alloys were investigated using the metallurgical technique and nano-indentation technique in nano-surface region. Equal channel angular pressing (ECAP) was used to apply severe plastic deformation to the aluminum alloys in order to obtain fine grain sized materials. The elastic modulus was measured and interpreted in relation to the metallurgical observation. The elastic modulus increased after ECAP process due to evolution of the fine grains. However, the elastic modulus decreased after heat treatment due to generation of coarsened precipitates on the grain boundaries.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.5
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• pp.420-425
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• 2008

PMMA light guiding plate with nano-sized pattern was fabricated using anodized aluminum oxide membrane as a template for nano imprint lithography. Nano-sized pore arrays were prepared by the self-organization processes of the anodic oxidation using the aluminum plate with 99.999% purity. Since the aluminum plate has a rough surface, the aluminum plate with thickness of 1mm was anodized after the pre-treatments of chemical polishing, and electrochemical polishing. The surface morphology of the alumina obtained by the first anodization process was controlled by the concentration of electrochemical solution during the first anodization. The surface morphology of the alumina was also changed according to temperature of the solution during chemical polishing performed after first anodization. The pore widening process was employed for obtaining the one-channel with flat surface and height of the channel because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. It is shown from SPM results that the nano-sized pattern on PMMA light guiding plate fabricated by nano imprint lithography method was well transferred from that of anodized aluminum oxide template.

• Mass Spectrometry Letters
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• v.7 no.1
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• pp.21-25
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• 2016

Dual-channel nano-electrospray has recently become an ionization technique of great promise especially in biological mass spectrometry. This unique approach takes advantage of the mixing processes that occurs during electrospray. Understanding in more detail the fundamental principles influencing spray formation further study of the origins of the mixing processes: (1) in a Taylor cone region, (2) in charged droplets or (3) in both environments. The dual-channel emitters were made from borosilicate theta-shape glass tubes (O.D. 1.2 mm) and had a tip diameters of less than 4 μm. Electrical contact was achived by deposition of a thin film of an appropriate metal onto the surface of the emitter. The experimental investigation of the Taylor cone formation in a dual-channel electrospray emitter has been carried out by injection of polystyrene beads (diameter 3 μm) at very low concentrations into one of the channels of the non-tapered theta-glass tubes. High-speed camera experiments were set up to visualize the mixing processes in Taylor cone regions for dual-channel emitters. Mass spectra from dual nano-electrospray are presented.