Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.354-355
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- 2008
Electrical sensing of SOI nano-wire BioFET by using back-gate bias
Back-gate bias를 이용한 SOI nano-wire BioFET의 electrical sensing
- Jung, Myung-Ho (Kwangwoon Univ.) ;
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Ahn, Chang-Geun
(Nano-Bio Electronic Device Team, Electronics and Telecommunications Research Institute)
;
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Cho, Won-Ju
(Kwangwoon Univ.)
- Published : 2008.06.19
Abstract
The sensitivity and sensing margin of SOI(silicon on insulator) nano-wire BioFET(field effect transistor) were investigated by using back-gate bias. The channel conductance modulation was affected by doping concentration, channel length and channel width. In order to obtain high sensitivity and large sensing margin, low doping concentration, long channel and narrow width are required. We confirmed that the electrical sensing by back-gate bias is effective method for evaluation and optimization of bio-sensor.