• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.53-53
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.218-218
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• 2009

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.118-125
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• 2005

Low temperature plasma treatment with different gases and rf powers were performed to improve the adhesion strength between polytetrafluoroethylene(PTFE) and electroless deposited copper. According to the research, $H_2$ plasma having hydrogen radical was more effective in surface polarity modification than $O_2$ plasma due to the defluorination reaction. However, surface roughness of PTFE was more increased with $O_2$ than $H_2$ plasma. PTFE treated with $120W-O_2$ plasma and $250w-H_2$ plasma, consecutively showed rougher surface than single step $250w-H_2$ plasma treated one and more hydrophilic than single step $120W-O_2$ plasma treated one. And it showed 5B tape test grade, which is better adhesion property than 1B or 3B obtained by single step plasma treatment. In addition, adhesion strength between PTFE and Cu deposit is also deeply affected by residual water on its interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.131-131
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• 2007

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.266-270
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• 2003

We studied BCl$_3$ dry etching of GaAs in a planar inductively coupled plasma system. The investigated process parameters were planar ICP source power, chamber pressure, RIE chuck power and gas flow rate. The ICP source power was varied from 0 to 500 W. Chamber pressure, RIE chuck power and gas flow rate were controlled from 5 to 15 mTorr, 0 to 150 W and 10 to 40 sccm, respectively. We found that a process condition at 20 sccm $BCl_3$ 300 W ICP, 100 W RIE and 7.5 mTorr chamber pressure gave an excellent etch result. The etched GaAs feature depicted extremely smooth surface (RMS roughness < 1 nm), vertical sidewall, relatively fast etch rate (> $3000\AA$/min) and good selectivity to a photoresist (> 3 : 1). XPS study indicated a very clean surface of the material after dry etching of GaAs. We also noticed that our planar ICP source was successfully ignited both with and without RIE chuck power, which was generally not the case with a typical cylindrical ICP source, where assistance of RIE chuck power was required for turning on a plasma and maintaining it. It demonstrated that the planar ICP source could be a very versatile tool for advanced dry etching of damage-sensitive compound semiconductors.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.5 s.170
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• pp.175-180
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• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. In this research, fabrication of micro plasma electrode was carried out using FIB. The one of problems of FIB-sputtering is the redeposition of material including Ga+ ion source during sputtering process. Therefore the effect of the redeposition was verified by EDX. And the micro plasma electrode of copper was fabricated by FIB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.401-409
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• 2013

Numerical analysis on RF (Radio-Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by RF thermal plasma. For this purpose, the behaviors of Ni metal particles injected into RF plasma torch were investigated according to their diameters ($1{\sim}100{\mu}m$), RF input power (6 ~ 12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of $100{\mu}m$ can be completely evaporated at relatively low power level of 10 kW during its flight of RF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using RF thermal plasmas.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.96-96
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• 2016

Nanotechnology mostly employs nano-materials and nano-structures with distinctive properties based on their size, structure, and composition. It is quite difficult to produce nano-materials and nano-structures with identical sizes, structures, and compositions in large quantities, because of spatiotemporal fluctuation of production processes. In other words, fluctuation is the bottleneck in nanotechnology. We propose three strategies to suppress such fluctuations: employing 1) difference between linear and nonlinear phenomena, 2) difference in time constants, and 3) nucleation as a bottleneck phenomenon. We are also developing nano- and micro-scale guided assembly using plasmas as a plasma nanofabrication.1-5) We manipulate nano- and micro-objects using electrostatic, electromagnetic, ion drag, neutral drag, and optical forces. The accuracy of positioning the objects depends on fluctuation of position and energy of an object in plasmas. Here we evaluate such fluctuations and discuss the mechanism behind them. We conducted in-situ evaluation of local plasma potential fluctuation using tracking analysis of fine particles (=objects) in plasmas. Experiments were carried out with a radio frequency low-pressure plasma reactor, where we set two quartz windows at the top and bottom of the reactor. Ar plasmas were generated at 200 Pa by applying 13.56MHz, 450V peak-to-peak voltage. The injected fine particles were monodisperse methyl methacrylate-polymer spheres of $10{\mu}m$ in diameter. Fine particles were injected into the reactor and were suspended around the plasma/sheath boundary near the powered electrode. We observed binary collision of fine particles with a high-speed camera. The frame rate was 1000-10000 fps. Time evolution of their distance from the center of mass was measured by tracking analysis of the two particles. Kinetic energy during the collision was obtained from the result. Potential energy formed between the two particles was deduced by assuming the potential energy plus the kinetic energy is constant. The interaction potential is fluctuated during the collision. Maximum amplitude of the fluctuation is 25eV, and the average is 8eV. The fluctuation can be caused by neutral molecule collisions, ion collisions, and fluctuation of electrostatic force. Among theses possible causes, fluctuation of electrostatic force may be main one, because the fine particle has a large negative charge of -17000e and the corresponding electrostatic force is large compared to other forces.

• Nutrition Research and Practice
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• v.9 no.2
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• pp.144-149
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• 2015

BACKGROUND/OBJECTIVE: The aim of this study was to examine the effect of high dietary methionine (Met) consumption on plasma and hepatic oxidative stress and dyslipidemia in chronic ethanol fed rats. MATERIALS/METHODS: Male Wistar rats were fed control or ethanol-containing liquid diets supplemented without (E group) or with DL-Met at 0.6% (EM1 group) or 0.8% (EM2 group) for five weeks. Plasma aminothiols, lipids, malondialdehyde (MDA), alanine aminotransferase (ALT), and aspartate aminotransferase were measured. Hepatic folate, S-adenosylmethionine (SAM), and S-adenosylhomocysteine (SAH) were measured. RESULTS: DL-Met supplementation was found to increase plasma levels of homocysteine (Hcy), triglyceride (TG), total cholesterol (TC), and MDA compared to rats fed ethanol alone and decrease plasma ALT. However, DL-Met supplementation did not significantly change plasma levels of HDL-cholesterol, cysteine, cysteinylglycine, and glutathione. In addition, DL-Met supplementation increased hepatic levels of folate, SAM, SAH, and SAM:SAH ratio. Our data showed that DL-Met supplementation can increase plasma oxidative stress and atherogenic effects by elevating plasma Hcy, TG, and TC in ethanol-fed rats. CONCLUSION: The present results demonstrate that Met supplementation increases plasma oxidative stress and atherogenic effects by inducing dyslipidemia and hyperhomocysteinemia in ethanol-fed rats.