• Advances in nano research
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• v.15 no.6
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• pp.513-520
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• 2023

The exponential proliferation of cutting-edge computing technologies has spurred organizations to outsource their data and computational needs. In the realm of cloud-based computing environments, ensuring robust security, encompassing principles such as confidentiality, availability, and integrity, stands as an overarching imperative. Elevating security measures beyond conventional strategies hinges on a profound comprehension of malware's multifaceted behavioral landscape. This paper presents an innovative paradigm aimed at empowering cloud service providers to adeptly model user behaviors. Our approach harnesses the power of a Particle Swarm Optimization-based Probabilistic Neural Network (PSO-PNN) for detection and recognition processes. Within the initial recognition module, user behaviors are translated into a comprehensible format, and the identification of malicious nano-structures behaviors is orchestrated through a multi-layer neural network. Leveraging the UNSW-NB15 dataset, we meticulously validate our approach, effectively characterizing diverse manifestations of malicious nano-structures behaviors exhibited by users. The experimental results unequivocally underscore the promise of our method in fortifying security monitoring and the discernment of malicious nano-structures behaviors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.151-155
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• 2007

Quasi-phase-matched (QPM) second harmonic generation (SHG) waveguide devices for a green light generation were fabricated by a periodically patterned electrode on the +Z crystal surface and homogeneous LiCl solution using a 5 mol% MgO doped congruent z-cut lithium niobate crystals. Using selective chemical etching, we confirmed the periodic (${\sim}6.8{\mu}m$) domain inverted structure and measured SHG properties of fabricated periodically poled MgO : $LiNbO_3$ ridge-type waveguides.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.53-58
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• 2006

When external field was applied to congruent $LiNbO_3$, it was investgated for domain formation and expansion of $LiNbO_3$. The domain wall velocities of 0.5 mm thickness $LiNbO_3$ were 28.70, 16.02 and $5.75{\mu}m/sec$ under poling field of 23.5, 22.0 and 21.0 kV/mm, respectively. As $1 M{\Omega}$ resistor was used in domain inversion system, harmonic domain inversion was not achieved by rapid domain expansion. And 50% duty cycle periodically poled $LiNbO_3$ have been fabricated by charge control using $10 M{\Omega}$ resistor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.49-52
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• 2006

Periodic electric field assisted poling low loss (${\sim}0.1dB/cm$) single-mode Ti-diffused waveguides in $LiNbO_3$ has been achieved using a periodically patterned electrode on the +Z surface of Ti : $LiNbO_3$ crystal and homogeneous LiCl solution. Using selective chemical etching, we confirmed the periodic (${\sim}16{\mu}m$) domain inverted structure and measured SH (second harmonic) properties of fabricated periodically poled Ti : $LiNbO_3$ waveguides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• Journal of the Korean Ceramic Society
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• v.42 no.11 s.282
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• pp.749-752
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• 2005

When an electric field higher than a characteristic coercive field is applied to a ferroelectric such as $LiNbO_3$, the orientation of the spontaneous polarization is reversed, which causes the reversal of the sign of odd-rank tensor properties such as electro-optic and nonlinear optic coefficients. A fabrication process of insulator and periodic external field assisted poling of a z-cut $LiNbO_3$ have been optimized for a periodic $180^{\circ}$ phase inversion along z-axis. The poling jig and the poling control system, fully controlled by a computer, for high quality and reproducible PPLN fabrication have been devised. Periodically polarization reversed PPLN was adjusted based on the fabricated thickness of insulator. The poling structure of PPLN was observed under a microscope after etching PPLN samples by an etching solution ($HF:HNO_3$ = 1 : 2) for about 15 min.

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.193-198
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• 2008

A novel refractive index sensor, which consists of polymer channel waveguide overlaid with $TiO_2$ thin film, is demonstrated. To evaluate the fabricated sensor, we measured the polarimetric interference induced by concentration change of injected glycerol solution. Our experimental results show that thicker $TiO_2$ film improves the sensitivity of the polarimetric interferometer. For the fabricated waveguide with a 20 nm thick $TiO_2$ film, the measured index change to lead phase variation of $2{\pi}$ is $1.8{\times}10^{-3}$.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.175-180
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• 2006

A single sideband(SSB) modulator operating at 5.5 GHz was fabricated by polarization inversion techniques. The dimension of domain inversion in a $LiINbO_3$ Mach-Zehnder structure was precisely controlled so that the RF signal applied on two Mach-Zehnder arms gives rise to $90^{\circ}$ effective phase difference. The single sideband suppression was maximized by optimization of the polarization status of the optical input and by the DC bias value. The fabricated device showed the center frequency of 5.8 GHz and the maximum sideband suppression of 33dB, where the bandwidth of 15 dB sideband suppression ranged over a 2.5 GHz span. The optical phase delay could be regulated by the DC bias voltage, fur example, the enhanced optical modulation sideband was distinctively switched from the upper sideband to the lower sideband by changing the DC bias voltage from 1.9 V to -10.6 V.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.181-185
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• 2006

A novel 60GHz optical carrier generator with a polarization domain-inverted structure is suggested and is demonstrated. The two arms of the Mach-Zehnder optical waveguide are periodically poled for quasi-phase velocity matching between the optical wave at 1550nm and the RF wave at 30 GHz. The center frequency of band-pass modulation and the 3 dB bandwidth of the fabricated modulator were measured to be 30.3 GHz and 5.1 GHz, respectively. Sub-carriers with the frequency difference of 60GHz waeregenerated under appropriate DC biac voltage application while the carrier was suppressed to lead to the power ratio between the modulated sub-carrier and the suppressed fundamental carrier of 28 dB, which proves that double sideband- suppressed carrier(DSB-SC) operation can be realized by the suggested single device.