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http://dx.doi.org/10.4313/JKEM.2011.24.7.568

Effect of Thickness on the Properties of Al Doped ZnO Thin Films Deposited by Using PLD  

Pin, Min-Wook (Department of Nano Engineering and Electronics Ceramics Center, Dong-Eui University)
Bae, Ki-Ryeol (Department of Nano Engineering and Electronics Ceramics Center, Dong-Eui University)
Park, Mi-Seon (Department of Nano Engineering and Electronics Ceramics Center, Dong-Eui University)
Lee, Won-Jae (Department of Nano Engineering and Electronics Ceramics Center, Dong-Eui University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.7, 2011 , pp. 568-573 More about this Journal
Abstract
AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.
Keywords
Transparent conducting oxide; Al doped ZnO; Thickness; PLD;
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