• Advances in nano research
• /
• 제14권5호
• /
• pp.399-407
• /
• 2023

As Sensor plays an important part in day-to-day life. Sensors are used almost in each domain wherein humans are not able to sense or measure some parameters. Say from sensing a real-time activity of a person to sensing the tiny molecules of any gas or structures. Now sensors combined with advanced fabrication techniques with nanotechnology can be said as a game-changing combination. As the modern world is evolving every minute, the size of the components, instruments, and different equipment is shrinking rapidly. For example, the sensor or any other element which was used 10 years ago is reduced up to 5 times its original size and all of this is possible because of continuous advancement done in the manufacturing and fabrication techniques that are being used nowadays. Apart from this, it is not necessary that the term nano should only justify the size of the sensor. Nanotechnologically fabricated, refers to a sensor or any other element which may be large enough as compared to the regular one but they may be structured using some nano-particles.

• 센서학회지
• /
• 제18권3호
• /
• pp.239-244
• /
• 2009

We fabricated nano-templates by low temperature BCP(block copolymer) process at 180 $^{\circ}C$, then we deposited 10 nm-thick $TiO_2$ layers with ALD(atomic layer deposition) at low temperature of 150 $^{\circ}C$. Through FE-SEM analysis, we confirmed the successful formation of the groove-type(width of crest : 30 nm, width of trough : 18 nm) and the cylinder-type(diameter : 10 nm, distance between hole : 25 nm) templates. Moreover, after $TiO_2$-ALD processing, we confirmed the deposition of the uniform nano layers of $TiO_2$ on the nano-templates. Through AFM analysis, the pitches of the crest-through(in groove-type) and hole-hole(in cylinder-type) were the same before and after $TiO_2$-ALD processing. In addition, we indirectly determined the existence of the uniform $TiO_2$ layers on nano-templates as the surface roughness decreased drastically. We successfully fabricated nano-template at low temperature and confirmed that the three-dimensional nano-structure for sensor application could be achieved by $TiO_2$-ALD processing at extremely low temperature of 150 $^{\circ}C$.

• Bulletin of the Korean Chemical Society
• /
• 제32권4호
• /
• pp.1371-1374
• /
• 2011

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 추계학술대회 논문집
• /
• pp.501-502
• /
• 2006

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2004년도 춘계학술대회 논문집
• /
• pp.453-458
• /
• 2004

A capacitate sensor is a proper device for measuring high small displacement. General design parameters and procedure are discussed and a test sensor was built to have a measuring range of 100$\mu\textrm{m}$ and a sensitivity about 30nm. This sensor has too opposing electrode of comparably large area and has nominal gap distance about 150$\mu\textrm{m}$. So as to achieve a nano order displacement sensitivity, both sensor and target system have to be considered. This is important for the sensitivity can be achieved by minimizing a system total noise level in electronic type sensor application. Typical performance of the developed sensor is demonstrated in precision moving stage having 0.1$\mu\textrm{m}$ moving resolution.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 추계학술대회 논문집
• /
• pp.73-76
• /
• 2005

Carbon nanotubes (CNTs) have attracted an increasing attention due to their superior mechanical properties and potential application in industries. The strength of CNT has been predicted or calculated through several simulation techniques but actual experiments on stress-strain behavior are rare due to its dimensional limit, nanoscale positioning/manipulation, and instrumental resolution. We have attempted to observe straining responses of a multi-walled carbon nanotube (MWNT) by performing an in-situ tensile testing in a scanning electron microscope. The carbon nanotube, having its both ends attached on a cantilever force sensor and Y-shaped support, was elongated by a computer-controlled nanomanipulator. Linear deformation and fracture behaviors of MWNT were successfully observed and its force-displacement curve was also measured from the bending stiffness and displacement of the force sensor and manipulator.

• 센서학회지
• /
• 제21권6호
• /
• pp.451-455
• /
• 2012

Dense Cr-precursor nano-hexaprisms were prepared by heating the Cr-nitrate aqueous solution containing Hexamethylenetetramine and polyvinylpyrrolidone, which were converted into porous $Cr_2O_3$ nano-hexaprisms containing nanoparticles by heat treatment of Cr-precursors at $600^{\circ}C$ for 2 h in air atmosphere. At the sensor temperature of $300^{\circ}C$, porous $Cr_2O_3$ nano-hexaprism showed the high response ($R_g/R_a$, $R_g$: resistance in gas, $R_a$: resistance in air) to 100 ppm $C_2H_5OH$ ($R_g/R_a=69.8$) with negligible cross-responses to 100 ppm CO and 5 ppm $C_6H_6$. The sensitive and selective detection of $C_2H_5OH$ in porous $Cr_2O_3$ nano-hexaprism were discussed in relation to the morphology of nanostructures.

• 센서학회지
• /
• 제15권1호
• /
• pp.1-6
• /
• 2006

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.251-252
• /
• 2009

전류에 의한 자속변화를 검출하는 로고스키코일은 자성체를 코어로 이용하는 종전의 변류기 (Current Transformer) 와는 달리 공심이거나 비자성재료를 사용하기 때문에 자기적으로 포화되지 않으므로 일반적으로 디지털 적산 전력량계의 전류센서로 활용되고 있다. 본 연구는 저온소성 다층 세라믹 기판상에 로고스키코일을 적용한 전자식 전력량계의 정밀 전류측정용 센서 개발에 관한 것이며. 3차원 전자기장 해석 프로그램인 MWS를 하여 기판의 소재와 코일의 패턴의 크기 등을 달리하여 그 특성을 알아보고 실제 구현된 센서의 측정된 값과 비교해 보았다.

• 센서학회지
• /
• 제11권5호
• /
• pp.294-300
• /
• 2002

In this study, we fabricated thermopile infrared sensor with floating membrane structure. Floating membrane was formed by SOI(Silicon On Insulator) structure. In SOI structure, silicon dioxide layer between top silicon layer and bottom silicon substrate was etched by HF solution, then membrane was floated over substrate. After membrane was floated, thermopile pattern was formed on membrane. By insertion of SOI technology, we could obtain thermal isolation structure easily and passivation process for sensor pattern protection was not required during fabrication process. Then, the amplifier circuit for thermopile sensor was fabricated by using $1.5{\mu}m$ CMOS process. The voltage gain of fabricated amplifier was about two hundred.