• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.1-6
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• 2006

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.5-11
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• 2008

Thermally evaporated 10 nm-Ni/1 nm-Au/(30 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Au-inserted nickel silicide. The silicide samples underwent rapid thermal annealing at $300{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance was measured using a four-point probe. A scanning electron microscope and a transmission electron microscope were used to determine the cross-sectional structure and surface image. High-resolution X-ray diffraction and a scanning probe microscope were employed for the phase and surface roughness. According to sheet resistance and XRD analyses, nickel silicide with Au had no effect on widening the NiSi stabilization temperature region. Au-inserted nickel silicide on a single crystal silicon substrate showed nano-dots due to the preferred growth and a self-arranged agglomerate nano phase due to agglomeration. It was possible to tune the characteristic size of the agglomerate phase with silicidation temperatures. The nano-thick Au-insertion was shown to lead to self-arranged microstructures of nickel silicide.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.359-362
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• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.536-539
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• 2004

A novel ink-jet printing method was investigated for fine patterning of phosphor layer in PDP using a precision nozzle printing. A reverse emulsion method was developed for the synthesis of nano-sized phosphor powder that could be formulated in the phosphor ink. The composition of the phosphor ink including charge controlling agents, solvent, dispersant and nano-sized phosphor powder was optimized for the fine patterning of phosphor layer for high resolution PDP.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.466-471
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• 2004

In focused-ion-beam (FIB) application of micromachining and device transplantation, four kinds of FIB processes, namely FIB sputtering, FIB-induced etching, redeposition, and FIB-induced deposition, are well utilized. As with FIB systems, scanning electron microscopes(SEMs) were extensively used in the semiconductor industry. They are the tools of choice for defect review and providing the image resolution needed for process monitoring. The enhanced capabilities of a dual-column on one chamber system are quickly becoming realized by the nano industry for performing a wide range of application.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.2
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• pp.111-118
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• 2008

The mechanism of charge flow has been probed by measuring the $^{1}H$ chemical shift on a proton-irradiated ${KH_2}{PO_4}$ (KDP) single crystal. The proton irradiation caused the increase in $^{1}H$ chemical shift. It can be interpreted as the electronic charge transfer from the proton to oxygen atom, accompanied with the proton displacement along the hydrogen bond. For the high resolution $^{1}H$ chemical shift measurement, CRAMPS (Combined Rotation And Multiple Pulses) technique is utilized.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.1783-1784
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• 2006

A laser interferometer is the unique measurement device that can measure the range up to a few meters with sub-nano resolution and this characteristic makes it as the important sensing device for the emerging nano-mechatronics technologies. The laser interferometer, however, is very sensitive to the environments such as temperature, humidity, sound noises, vibrations and air turbulences and these factors result in a few hundred nano meter errors. There have been many efforts to reduce these environmental errors. The output of the laser interferometer is assumed to be the sum of a real displacement and a Markov process noise. The purpose of this paper is to develop Kalman filter algorithms to reduce the laser interferometer measurement errors by exploiting the information of displacements in position-servo systems.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1043-1047
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• 2003

With the advancement of micro-systems and nanotechnology, the need for ultra-precision fabrication techniques has been steadily increasing. In this paper, a novel nano-structure fabrication process that is based on the fundamental understanding of nano-scale tribological interaction is introduced. The process, which is called Mechano-Chemical Scanning Probe Lithography (MC-SPL), has two steps, namely, mechanical scribing for the removal of a resist layer and selective chemical etching on the scribed regions. Organic monolayers are used as a resist material, since it is essential for the resist to be as thin as possible in order to fabricate more precise patterns and surface structures. The results show that high resolution patterns with sub-micrometer scale width can be fabricated on both silicon and various metal surfaces by using this technique.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.6
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• pp.71-75
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• 2006

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. The target of this paper is the analysis of FIB sputtering process according to tilt angle, dwell time and overlap for application of 3D micro and pattern fabrication and to find the effective beam scanning conditions using Taguchi method. Therefore we make the conclusions that tilt angle is dominant parameter for sputtering yield. Burr size is reduced as tilt angle is higher.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.163-166
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• 2015

Intramolecular energy migration in a cyclic porphyrin array is spontaneous transfer of energy from one excited site to another. Since the efficiency of energy migration is inversely proportional to distance, the energy migration is occurred on their adjacent sites more often than distant ones. Therefore, the energy migration in the cyclic porphyrin array is largely dependent on their conformational characters. However, evaluation of conformational information by means of experimental tools is ambiguous since their limited resolution. In this work, we calculate the internal angle and distance distributions of cyclic porphyrin arrays using molecular dynamics simulations to obtain conformational information. To evaluate the angle and distance distributions respect to molecular size, we constructed molecules with n porphyrin dimers (n=1,3,7) in implicit solvent environment. Performing molecular dynamics simulations, we modulated alkyl groups to investigate additional conformational effects of the system.