• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.60-60
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• 2010

1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1232-1233
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• 2008

딥 코팅 공정을 통하여 콜로이드 $Fe_2O_3$ 나노입자의 단일층을 다공성의 AAO (Anodic Aluminum Oxide) 기판에 형성하였다. 나노입자의 평균 사이즈는 20 nm이고, 각각의 나노입자는 올레익 산(oleic acid) 으로 둘러싸여 옥탄(octane) 용액 안에 분산되어있다. AAO 기판은 알루미늄에 높은 균일성과 고밀도의 기공(pore) 형성을 위해 두 단계 양극산화공정을 통해 제작하였다. AAO 기공의 지름은 ${\sim}$30에서 100 nm 이고, 딥 코팅 공정의 속도는 0.1 mm/sec 로 하여 AAO의 나노기공 안에 나노입자의 단일층을 성공적으로 형성시켰다.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.165-172
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• 2003

Fireproofing polyolefin nanocomposite for the application of power distributing panel was prepared by compounding linear low density polyethylene(LLDPE), decabromodiphenyl oxide (DBDPO), $Sb_2O_3$ as flame retardant agents, and modified nano clay as filler. The optimized formulation ratio of compounds to prepare the fireproofing polyolefin nanocomposite was obtained. The flame retardant properties for nanocomposite prepared by compounding 22.5 phr of nano clay and 18 phr of DBDPO based on 100 phr of LLDPE were shown that the combustion time. 10${\sim}$18 s, combustion distance, 12${\sim}$15 mm and non-melt dropping characteristics. In particular. the content of DBDPO in nanocomposite could be decreased to 18 phr from 40 phr DBDPO for fireproofing composite containing 30 phr of clay. The electrical properties measured from tracking test, had an excellent antitracking properties by not showing the phenomenon of leakage current and sparking.

• Journal of Powder Materials
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• v.27 no.4
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• pp.305-310
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• 2020

In this study, partially dry transfer is investigated to solve the problem of fully dry transfer. Partially dry transfer is a method in which multiple layers of graphene are dry-transferred over a wet-transferred graphene layer. At a wavelength of 550 nm, the transmittance of the partially dry-transferred graphene is seen to be about 3% higher for each layer than that of the fully dry-transferred graphene. Furthermore, the sheet resistance of the partially dry-transferred graphene is relatively lower than that of the fully dry-transferred graphene, with the minimum sheet resistance being 179 Ω/sq. In addition, the fully dry-transferred graphene is easily damaged during the solution process, so that the performance of the organic photovoltaics (OPV) does not occur. In contrast, the best efficiency achievable for OPV using the partially dry-transferred graphene is 2.37% for 4 layers.

• Applied Microscopy
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• v.45 no.3
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• pp.177-182
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• 2015

The boiler tubes of X20CrMoV12.1 used in fossil-fired power plants were obtained and analyzed for the effect of water treatment on the steam corrosion-induced oxide scale in an effort to better understand the oxide formation mechanism, as well as pertinent method of maintenance and lifetime extension. The specimens were analyzed using various microscopy and microanalysis techniques, with focuses on the effect of water treatment on the characters of scale. X-ray diffraction analysis showed that the scales of specimens were composed of hematite ($Fe_2O_3$), magnetite ($Fe_3O_4$), and chromite ($FeCr_2O_4$). Electron backscatter diffraction analysis showed that the oxides were present in the following order on the matrix: outer $Fe_2O_3$, intermediate $Fe_3O_4$, and inner $FeCr_2O_4$. After all volatile treatment or oxygenated treatment, a dense protective $Fe_2O_3$ layer was formed on the $Fe_3O_4$ layer of the specimen, retarding further progression of corrosion.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.59-63
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• 2012

Studying the long-range ordering of nanopores on the anodic aluminum oxide (AAO) membranes under a hard anodization (HA) approach is crucial in producing well-aligned nanopores on the AAO membranes. Electro-polishing in a mixture of ethanol and perchloric acid for 5 min removed marks formed by rolling and produced flat surfaces on aluminum substrates. The AAO was formed by the first HA process, providing seeds for the subsequent production of uniform AAO nanopores. The second HA process carried out on the seeds produced well-aligned, uniform AAO nanopores. The AAO nanopores, varying in size and shape, were observed with voltages applied for HA. This study provides a route for controlling the size and shape of AAO nanopores by changing the applied voltages.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.248-248
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• 2011

ZnO was grown on a Au-catalyzed Si(100) substrate by using a simple vapor phase transport (VPT) with a mixture of zinc oxide and graphite powders. The ZnO grown at 800$^{\circ}C$ had a soccer ball structure with diameters of <500 nm. The ZnO soccer ball structure was, for the first time, observed in this work. The optical properties of the ZnO soccer balls were investigated by photoluminescence (PL). In the room-temperature (RT) PL of the ZnO soccer balls, a strong near-band-edge emission (NBE) and a weak deep-level emission were observed at 3.25 and 2.47 eV (green emission), respectively. The weak deep-level emission (DLE) at around 2.47 eV (green emission) is caused by impurities and structural defects. The FWHM of the NBE peak from the ZnO soccer balls was 110 meV. In addition, the PL intensity ratio of the NBE to DLE was about 4. The temperature-dependent PL was also carried out to investigate the mechanism governing the quenching behavior of the PL spectra.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.299-303
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• 2006

In this paper, anode supported SOFC with columnar structured YSZ electrolyte was fabricated via Electron Beam Physical Vapor Deposition (EBPVD) method. Liquid condensation process was employed for the preparation of NiO-YSZ substrate and the high power electron beam deposition method was used for the deposition of YSZ electrolyte film. Double layered cathode with LSM-YSZ and LSM was printed on electrolyte via screen-printing method and fired at $1150^{\circ}C$ in air atmosphere for 3 h. The electrochemical performance and the long-term stability of $5{\times}5cm^2$ single cell were investigated with DC current-voltage characteristics and AC-impedance spectroscopy. According to the investigation, $5{\times}5cm^2$ sized unit cell showed the maximum power density of around $0.76W/cm^2$ at $800^{\circ}C$ and maintained the stable performance over 400 h.