• 제목/요약/키워드: Nano Oxide

검색결과 1,159건 처리시간 0.029초

나노 구조를 가지는 다공성 주석 산화물의 전기화학적 특성 (Electrochemical Characterization of Anodic Tin Oxides with Nano-Porous Structure)

  • 이재욱;박수진;신헌철
    • 한국재료학회지
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    • 제21권1호
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    • pp.21-27
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    • 2011
  • A nano-porous structure of tin oxide was prepared using an anodic oxidation process and the sample's electrochemical properties were evaluated for application as an anode in a rechargeable lithium battery. Microscopic images of the as-anodized sample indicated that it has a nano-porous structure with an average pore size of several tens of nanometers and a pore wall size of about 10 nanometers; the structural/compositional analyses proved that it is amorphous stannous oxide (SnO). The powder form of the as-anodized specimen was satisfactorily lithiated and delithiated as the anode in a lithium battery. Furthermore, it showed high initial reversible capacity and superior rate performance when compared to previous fabrication attempts. Its excellent electrode performance is probably due to the effective alleviation of strain arising from a cycling-induced large volume change and the short diffusion length of lithium through the nano-structured sample. To further enhance the rate performance, the attempt was made to create porous tin oxide film on copper substrate by anodizing the electrodeposited tin. Nevertheless, the full anodization of tin film on a copper substrate led to the mechanical disintegration of the anodic tin oxide, due most likely to the vigorous gas evolution and the surface oxidation of copper substrate. The adhesion of anodic tin oxide to the substrate, together with the initial reversibility and cycling stability, needs to be further improved for its application to high-power electrode materials in lithium batteries.

P/M Fecralloy 성형체의 고온산화 및 전기저항 안정성에 미치는 SiO2 첨가 효과 (The Effect of SiO2 addition on Oxidation and Electrical Resistance Stability at High-temperature of P/M Fecralloy Compact)

  • 박진우;옥진욱;정우영;박동규;안인섭
    • 한국분말재료학회지
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    • 제24권4호
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    • pp.292-297
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    • 2017
  • A metallic oxide layer of a heat-resistant element contributes to the high-temperature oxidation resistance by delaying the oxidation and has a positive effect on the increase in electrical resistivity. In this study, green compacts of Fecralloy powder mixed with amorphous and crystalline silica are oxidized at $950^{\circ}C$ for up to 210 h in order to evaluate the effect of metal oxide on the oxidation and electrical resistivity. The weight change ratio increases as per a parabolic law, and the increase is larger than that observed for Fecralloy owing to the formation of Fe-Si, Fe-Cr composite oxide, and $Al_2O_3$ upon the addition of Si oxide. Si oxides promote the formation of $Al_2O_3$ and Cr oxide at the grain boundary, and obstruct neck formation and the growth of Fecralloy particles to ensure stable electrical resistivity.

Nano-Floating Gate Memory Devices with Metal-Oxide Nanoparticles in Polyimide Dielectrics

  • Kim, Eun-Kyu;Lee, Dong-Uk;Kim, Seon-Pil;Lee, Tae-Hee;Koo, Hyun-Mo;Shin, Jin-Wook;Cho, Won-Ju;Kim, Young-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.21-26
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    • 2008
  • We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

입상의 이산화티타늄 박막을 이용한 수소센서 (Granular Thin Film of Titanium Dioxide for Hydrogen Gas Sensor)

  • 송혜진;오동훈;정진연;웬득화;조유석;김도진
    • 한국재료학회지
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    • 제19권6호
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    • pp.325-329
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    • 2009
  • Titanium dioxide thin films were fabricated as hydrogen sensors and its sensing properties were tested. The titanium was deposited on a $SiO_2$/Si substrate by the DC magnetron sputtering method and was oxidized at an optimized temperature of $850^{\circ}C$ in air. The titanium film originally had smooth surface morphology, but the film agglomerated to nano-size grains when the temperature reached oxidation temperature where it formed titanium oxide with a rutile structure. The oxide thin film formed by grains of tens of nanometers size also showed many short cracks and voids between the grains. The response to 1% hydrogen gas was ${\sim}2{\times}10^6$ at the optimum sensing temperature of $200^{\circ}C$, and ${\sim}10^3$ at room temperature. This extremely high sensitivity of the thin film to hydrogen was due partly to the porous structure of the nano-sized sensing particles. Other sensor properties were also examined.

롤투롤 스퍼터 시스템을 이용하여 PET 기판위에 성막 시킨 ITO 박막의 특성 연구 (Characteristics of Indium Tin Oxide Films Grown on PET Substrate Grown by Using Roll-to-Roll (R2R) Sputtering System)

  • 조성우;최광혁;배정혁;문종민;정진아;정순욱;박노진;김한기
    • 한국재료학회지
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    • 제18권1호
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    • pp.32-37
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    • 2008
  • The electrical, optical, structural and surface properties of an indium tin oxide (ITO) film grown on a flexible PET substrate using a specially designed roll-to-roll (R2R) sputtering system as a function of the DC power, $Ar/O_2$ flow ratio, and rolling speed is reported. It was observed that both the electrical and optical properties of the ITO film on the PET substrate were critically dependent on the $Ar/O_2$ flow ratio. In addition, x-ray diffraction examination results showed that the structure of the ITO film on the PET substrate was an amorphous structure regardless of the DC power and the $Ar/O_2$ flow ratio due to a low substrate temperature, which was maintained constant by a main cooling drum. Under optimized conditions, ITO film with resistivity of $6.44{\times}10^{-4}{\Omega}-cm$ and transparency of 86% were obtained, even when prepared at room temperature. Furthermore, bending test results exhibited that R2R-grown ITO film had good flexibility which would be applicable to flexible displays and solar cells.

Zinc Oxide와 갈륨이 도핑 된 Zinc Oxide를 이용하여 Radio Frequency Magnetron Sputtering 방법에 의해 상온에서 제작된 박막 트랜지스터의 특성 평가 (Fabrication and Characteristics of Zinc Oxide- and Gallium doped Zinc Oxide thin film transistor using Radio Frequency Magnetron sputtering at Room Temperature)

  • 전훈하;;노경석;김도현;최원봉;전민현
    • 한국진공학회지
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    • 제16권5호
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    • pp.359-365
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    • 2007
  • 본 논문에서는 zinc oxide (ZnO)와 gallium이 도핑 된 zinc oxide (GZO)를 이용하여 radio frequency (RF) magnetron sputtering 방법에 의해 상온에서 제작된 bottom-gate 박막 트랜지스터의 특성을 평가하고 분석하였다. 게이트 절연층 물질로서 새로운 물질을 사용하지 않고 열적 성장된 $SiO_2$를 사용하여 게이트 누설 전류를 수 pA 수준까지 줄일 수 있었다. ZnO와 GZO 박막의 표면 제곱평균제곱근은 각각 1.07 nm, 1.65 nm로 측정되었다. 그리고 ZnO 박막은 80% 이상, GZO 박막은 75% 이상의 투과도를 가지고 있었고, 박막의 두께에 따라 투과도가 달라졌다. 또한 두 시료 모두 (002) 방위로 잘 정렬된 wurtzite 구조를 가지고 있었다. 제작된 ZnO 박막 트랜지스터는 2.5 V의 문턱 전압, $0.027\;cm^2/(V{\cdot}s)$의 전계효과 이동도, 104의 on/off ratio, 1.7 V/decade의 gate voltage swing 값들을 가지고 있었고, enhancement 모드 특성을 가지고 있었다. 반면에 GZO 박막 트랜지스터의 경우에는 -3.4 V의 문턱 전압, $0.023\;cm^2/(V{\cdot}s)$의 전계효과 이동도, $2{\times}10^4$의 on/off ratio, 3.3 V/decade의 gate voltage swing 값들을 가지고 있었고, depletion 모드 특성을 가지고 있었다. 우리는 기존의 ZnO와 1wt%의 Ga이 도핑된 ZnO를 이용하여 두 가지 모드의 트랜지스터 특성을 보이는 박막 트랜지스터를 성공적으로 제작하고 분석하였다.

교류 전압에 의한 AAO 나노 구조 성장 제어 (AC based AAO NanoStructure Growth Control)

  • 박소정;허정환;이성민;이강호;김규태;박성찬;하정숙
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.87-88
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    • 2005
  • AAO(Anodic Aluminum Oxide)는 양극산화 방법을 이용하여 얻을 수 있는 알루미늄의 다공성 산화막이다. 기존의 방법에서는 DC전압을 이용하여 AAO를 성장시켰는데 본 연구에서는 AC전압을 이용하여 AAO의 성장 특성을 제어하였다. 전압원으로 DAQ를 사용하였는데 출력전압을 증폭하기 위하여 2 단 차동증폭기를 제작하였다. 실험 결과는 AAO 기판의 SEM 사진을 촬영, 분석함으로써 얻을 수 있었다. SEM 시진을 분석한 결과 pore size는 전압의 변화에 큰 영향을 받지 않음을 알 수 있었던 반면 성장 길이는 AC전압의 주기가 증가함에 따라 길어지는 성향을 확인할 수 있었다. 또한 주기와 AAO 성장 길이와의 관계를 로그스케일 그래프로 나타내보면 선형적인 특성을 나타내었다. 이를 통해 인가한 전압의 주파수에 따라 AAO의 성장 길이를 예측할 수 있었다.

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Influence of Sn Doping on Structural and Optical Properties of Zinc Oxide Nanorods Prepared Via Hydrothermal Process

  • Park, Hyunggil;Kim, Younggyu;Ji, Iksoo;Kim, Soaram;Kim, Jin Soo;Son, Jeong-Sik;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.203.2-203.2
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    • 2013
  • Hydrothermally grown ZnO nanorods were synthesized with various Sn contents on quartz substrates, ranging from 0 to 2.5 at% in increment 0.5 at%. Scanning electron microscopy (SEM) and ultraviolet (UV)- visible spectroscopy were used to determine the effect of Sn doping on the structural and optical properties. In the SEM images, the nanorods have hexagonal wurzite structure and the diameter of the nanorods increase with increase in the Sn contents. The optical parameters of the Sn-doped ZnO nanorods such as the absorption coefficients, optical bandgaps, Urbach energies, refractive indices, dispersion parameters, dielectric constants, and optical conductivities were gained from the transmittance and reflectance results. In the PL spectra, the NBE peaks in the UV region decrease and blue-shift with increase in the Sn contents. In addition, the DLE peaks in the visible region of the nanorods shift toward low-energy region when the ZnO nanorods doped with various Sn contents.

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Synthesis and Compaction of Al-based Nanopowders by Pulsed Discharge Method

  • Rhee, Chang-Kyu;Lee, Geun-Hee;Kim, Whung-Whoe
    • 한국분말재료학회지
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    • 제9권6호
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    • pp.433-440
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    • 2002
  • Synthesis and compaction of Al-base nano powders by pulsed discharge method were investigated. The aluminum based powders with 50 to 200 nm of diameter were produced by pulsed wire evaporation method. The powders were covered with very thin oxide layer. The perspective process for the compaction and sintering of nanostructured metal-based materials stable in a wide temperature range can be seen in the densification of nano-sized metal powders with uniformly distributed hard ceramic particles. The promising approach lies in utilization of natural uniform mixtures of metal and ceramic phases, e.g. partially oxidized metal powders as fabricated in our synthesis method. Their particles consist of metal grains coated with oxide films. To construct a metal-matrix material from such powder, it is necessary to destroy the hard oxide coatings of particles during the compaction process. This goal was realized in our experiments with intensive magnetic pulsed compaction of aluminum nanopowders passivated in air.

나노복합산화물 전극의 제조 및 수퍼커패시터로써의 응용 (Preparation of nano composite metal-oxide electrode and its application for superrcapacitor)

  • 김홍일;이주원;김상길;육경창;박수길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.801-804
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    • 2002
  • Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. Both of amorphous cobalt oxide and manganese dioxide were prepared by sol-gel process reported in our previous work. Nanostructured supramolecular oligomer of 1,5-diaminoanthraquinone(DAAQ) coated metal oxides were successfully prepared by electrochemical oxidation from an acidic non-aqueous medium. We established process parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured metal oxide electrodes using controlled solution chemistry. $CoO_2$ and $MnO_2$-based composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

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