• Journal of Powder Materials
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• v.20 no.3
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• pp.210-214
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• 2013

This manuscript reports on compared color evolution about phase transformation of ${\alpha}-FeOOH@SiO_2$ and ${\beta}-FeOOH@SiO_2$ pigments. Prepared ${\alpha}$-FeOOH and ${\beta}$-FeOOH were coated with silica for enhancing thermal properties and coloration of both samples. To study phase and color of ${\alpha}$-FeOOH and ${\beta}$-FeOOH, we prepared nano sized iron oxide hydroxide pigments which were coated with $SiO_2$ using tetraethylorthosilicate and cetyltrimethyl-ammonium bromide as a surface modifier. The silica-coated both samples were calcined at high temperatures (300, 700 and $1000^{\circ}C$) and characterized by scanning electron microscopy, CIE $L^*a^*b^*$ color parameter measurements, transmission electron microscopy and UV-vis spectroscopy. The yellow ${\alpha}$-FeOOH and ${\beta}$-FeOOH was transformed to ${\alpha}-Fe_2O_3$ with red, brown at 300, $700^{\circ}C$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.149-154
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• 2005

We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

• Journal of the Korean Electrochemical Society
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• v.6 no.3
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• pp.208-211
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• 2003

We have investigated the dimensional and microstructural dependence of magnetic properties of CoP nano-wire arrays fabricated by electrodeposition on AAO(anodic aluminum oxide) templates with different-size nanopores. Our results indicate that the magnetic properties of nanowire arrays can be varied with their dimensions and microstructures. As for the CoP nanowire arrays with the diameter of 20nm, it was found to have the coercivity more than 2.6kOe due to the shape anisotropy and squareness(Mr/Ms) of $\~0.8$. The CoP nanowire arrays with the diameter of 200m, however, showed very different magnetic properties depending on the current densities. Nanowires fabricated at $5mA/cm^2$ had stronger tendency to have the preferred crystallographic orientation of (002) parallel to the nanowire than those fabricated at $35mA/cm^2$ These microstructural differences are the reason why CoP nanowire arrays prepared at different current densities exhibited different magnetic properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.94-98
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• 2008

In order to improve the specific capacitance of amorphous hydrous manganese oxide ($MnO_2$) for supercapacitors, it is made into composites with vapour-grown carbon nanofibers (VGCF) having the VGCF ratio as 40 wt% in the composites. The electrochemical properties of these composites are investigated in 1.0 M $Na_2SO_4$ by cyclic voltammetry (CV), impedance measurements and chronopotentiometric charger/discharger. The composite with 40 wt% VGCF shows the superior electrochemical performance, whose specific capacitance (based on the mass of $MnO_2$, $0.8mg/cm^2$) is 380 F/g at 20 mV/s and 230 F/g at 500 mV/s. Also, the cycle-life testing of this electrode carried out for 3,000 charge/discharge cycles at $2.0mA/cm^2$ shows 97% capacitance retention.

• Korean Chemical Engineering Research
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• v.56 no.5
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• pp.705-710
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• 2018

An electrochemical glucose sensor with enzyme-free was fabricated using Pt nanoparticles (Pt NPs) decorated CuO nanoflowers (CuO NFs). 3-D CuO nanoflowers film was directly synthesized on Cu foil by a simple hydrothermal method and Pt NPs were dispersed on the petal surface of CuO NFs through electrochemical deposition. This prepared sample was noted to Pt NPs-CuO NF. Morphology of the Pt NPs-CuO NFs layer was analyzed using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The electrochemical properties and sensing performances were investigated using cyclic voltammetry (CV) and chronoamperometry (CA) under alkaline condition. The sensor exhibited a high sensitivity, wide liner range and fast response time. Its excellent sensing performance was attributed to the synergistic effect of the Pt NPs and CuO nanostructure.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3629-3633
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• 2011

The effect of a dense $TiO_2$ blocking layer prepared using the sol-gel method on the performance of dye-sensitized solar cells was studied. The blocking layer formed directly on the working electrode, separated it from the electrolyte, and prevented the back transfer of electrons from the electrode to the electrolyte. The dyesensitized solar cells were prepared with a working electrode of fluorine-doped tin oxide glass coated with a blocking layer of dense $TiO_2$, a dye-attached mesoporous $TiO_2$ film, and a nano-gel electrolyte, and a counter electrode of Pt-deposited FTO glass. The gel processing conditions and heat treatment temperature for blocking layer formation affected the morphology and performance of the cells, and their optimal values were determined. The introduction of the blocking layer increased the conversion efficiency of the cell by 7.37% for the cell without a blocking layer to 8.55% for the cell with a dense $TiO_2$ blocking layer, under standard illumination conditions. The short-circuit current density ($J_{sc}$) and open-circuit voltage ($V_{oc}$) also were increased by the addition of a dense $TiO_2$ blocking layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.175-180
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• 2016

ZnO nanoparticles were synthesized by aqueous preparation routes of a precipitation and a hydrothermal process. In the processes, the powders were formed by mixing aqueous solutions of Zn-nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) with NaOH aqueous solution under controlled reaction conditions such as Zn precursor concentration, reaction pH and temperature. Single ZnO phase has been obtained under low Zn precursor concentration, high reaction pH and high temperature. The synthesized particles exhibited flakes (plates), multipods or rods morphologies and the crystallite sizes and shapes would be efficiently controllable by changing the processing parameters. The hydrothermal method showed advantageous features over the precipitation process, allowing the precipitates of single ZnO phase with higher crystallinity at relatively low temperatures below $100^{\circ}C$ under a wider pH range for the Zn precursor concentration of 0.1~1 M.

• Corrosion Science and Technology
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• v.11 no.2
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• pp.65-69
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• 2012

One dimensional(1D) $Na_2Ti_6O_{13}$ nanorods with 70 nm in diameter was synthesized by a molten salt method. Using the synthesized nanorods, about 750 nm thick $Na_2Ti_6O_{13}$ film was coated on Fluorine-doped tin oxide(FTO) glasss substrate by the Layer-by-layer self-assembly(LBL-SA) method in which a repetitive self-assembling of ions containing an opposite electric charge in an aqueous solution was utilized. Using the Kubelka-Munk function, the band gap energy of the 1D-$Na_2Ti_6O_{13}$ nanorods was nalyzed to be 3.5 eV. On the other hand, the band gap energy of the $Na_2Ti_6O_{13}$ film coated on FTO was found to be a reduced value of 2.9 eV, resulting from the nano-scale and high porosity of the film processed by LBL-SA method, which was favorable for the photo absorption capability. A significant improvement of photocurrent and onset voltage was observed with the $Na_2Ti_6O_{13}$ film incorporated into the conventional $Fe_2O_3$ photoelectrode: the photocurrent increased from 0.25 to 0.82 mA/$cm^2$, the onset voltage decreased from 0.95 to 0.78 V.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1113-1119
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• 2003

We used isopropanol which has low boiling point to prepare thin films at low temperature and changed mole concentration of zinc acetate from 0.3 to 1.3 mol/l. The structural, optical and electrical properties of ZnO thin films with Zn content were investigated. ZnO thin films highly oriented along the c-axis were obtained at Zn concentration of 0.7 mol/l. ZnO thin films with Zn concentration of 0.7 mol/l showed a homogeneous surface layer of nano structure. The transmittance of ZnO thin films by UV-vis. measurement was about 87% under the Zn concentration of 0.7 mol/l, but rapidly decreased over the 1.0 mol/l. The optical band gap energy was obtained from 3.07 to 3.22 eV which is very close to the band gap of bulk ZnO (3.2 eV). The electrical resistivity of ZnO thin films was about 150 $\Omega$-cm that shows little difference with Zn concentration. I-V curves of ZnO thin films exhibited typical ohmic contact properties.