• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.212-213
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• 2008

This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.57-58
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• 2006

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthrough(NPT) Insulated Gate Bipolar Transistor has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys and thermal distributions form experiments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.9-12
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• 2002

NPT IGBT의 게이트 길이 최적화에 대해 수치 해석적으로 분석하였다. 게이트가 길어질 때 드리프트 영역의 전압강하는 급격히 감소하는 반면 소자 표면의 전압강하는 일정하게 증가하기 때문에 순방향 전압강하가 최소가 되는 게이트 길이를 얻을 수 있음을 보였고 시뮬레이션 결과에 부합하는 표면 전압 강하에 대한 해석적인 모델을 처음으로 제시하였으며 그 결과가 시뮬레이션과 잘 일치함을 보였다.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.187-192
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• 2012

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.257-263
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• 2013

In this paper, Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.889-895
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• 2008

This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.

• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.486-489
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• 2015

Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.3-6
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• 2004

반도체 디자인, 공정 기술 및 패기지 기술의 발달에 따라 전력용 반도체는 소형화, 고성능화, 지능화하고 있다. 고속 구동이 용이한 때문에 MOSFET이나 IGBT등의 MOS-gate형 전력 반도체의 발전이 두드려지며, trench, charge balance, NPT 기술등이 패키지 기술과 더불어 이를 위한 주요 기술이 될것으로 보인다. SiC나 GaN등의 Wide Band Gap 물질들을 사용한 차세대 전력 반도체 연구도 활발히 진행되고 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.173-174
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• 2006

In this paper we proposed transient model for NPT(Non Punch-Through) IGBT(Insulated Gate Bipolar Transistor) with gate resistances. As gate resistance increases, turn-off time increases. But If gate resistance is small, overshoot voltage increase. To analyze the effect of gate resistance, the transient model is made and the experiments are conducted. We used gate resistances of values; 8[$\Omega$], 140[$\Omega$], 810[$\Omega$] for simulations and experiments. We compared theoretical and experimental results and obtained good agreements.