• 제목/요약/키워드: NOR

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반도체 광증폭기와 외부변조 기법을 이용한 전광 NOR 논리소자 (An All-Optical NOR Logic Device using a Semiconductor Optical Amplifier and an External Modulation Technique)

  • 변영태;김상혁;이석;김재헌;우덕하;김선호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.197-200
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    • 2000
  • All-optical NOR logic device was realized by use of two pump signals with a single wavelength and a semiconductor optical amplifier(SOA). Specially, Mach-Zehnder(MZ) modulator was used for an external modulation of the pump signals. To obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier(EDFA) at the input of the SOA. Pump and probe signals are obtained from a DFB laser diode(${\lambda}_p$=1554 nm) and a tunable laser diode(${\lambda}_s$=1535 nm), respectively. The operation characteristics of the NOR logic device are successfully measured and demonstrated at the modulation frequency of 4.83 MHz.

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NOR 형태의 고속 dual-modulus 프리스케일러 (A NOR-type High-Speed Dual-Modulus Prescaler)

  • 성기혁;김이섭
    • 전자공학회논문지SC
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    • 제37권2호
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    • pp.69-76
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    • 2000
  • dual-modulus 프리스케일러는 제어신호의 값에 따라 입력신호를 두 개의 모듈러스(modulus) 중에서 하나의 값으로 나누는 회로이다. 본 논문에서는 일반적인 ratioed-NAND구조가 아닌, ratioed-NOR구조를 가진 새로운 고속 dual-modulus 프리스케일러를 제안한다. 제안하는 회로는 NMOS를 직렬 연결하는 대신 병렬 연결함으로써 기존 회로보다 더 고속으로 작동한다. 현대 0.65(m 2-poly 2-metal CMOS 공정 파라미터를 사용한 HSPICE 모의 실험 결과, 25℃의 온도와 5V전원전압의 환경에서, 40.7㎽의 전력을 소모하고 최대 동작 주파수는 2.8㎓라는 것을 얻었다. 제안하는 dual-modulus 프리스케일러는 셀룰라 라디오의 입력단에서 주파수 합성을 하는 데에 이용될 수 있을 것이다.

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N-Channel 산화물 TFT 기반의 저소비전력 논리 게이트 회로 (Low Power Digital Logic Gate Circuits Based on N-Channel Oxide TFTs)

  • 임도;박기찬;오환술
    • 대한전자공학회논문지SD
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    • 제48권3호
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    • pp.1-6
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    • 2011
  • N-channel 산화물 박막 트랜지스터(Thin Film Transistor, 이하 TFT)만을 이용한 저소비전력 inverter, NAND, NOR의 논리 게이트 회로를 제안한다. 제안된 회로는 asymmetric feed-through와 bootstrapping을 이용해서 pull-up, pull-down 스위치가 동시에 켜지지 않도록 설계하였다. 그 결과로 출력신호 전압 범위가 입력신호 전압과 동일하고 정전류가 흐르지 않는다. 인버터는 5 개의 TFT와 2 개의 capacitor로, NAND 및 NOR 게이트는 각각 10 개의 TFT와 4 개의 capacitor로 구성된다. 산화물 TFT 모델을 사용하여 SPICE 시뮬레이션을 수행하여 제안된 회로의 동작을 성공적으로 검증하였다.

Fluorescence Quenching of Norfloxacin by Divalent Transition Metal Cations

  • Park, Hyoung-Ryun;Seo, Jung-Ja;Shin, Sung-Chul;Lee, Hyeong-Su;Bark, Ki-Min
    • Bulletin of the Korean Chemical Society
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    • 제28권9호
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    • pp.1573-1578
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    • 2007
  • Fluorescence quenching of norfloxacin (NOR) by Cu2+, Ni2+, Co2+ and Mn2+ was studied in water. The change in the fluorescence intensity and lifetime was measured as a function of quencher concentration at various temperatures. According to the Stern-Volmer plots, the NOR was quenched both by collisions and complex formation with the same quencher. However, the static quenching had a more important effect on the emission. Large static and dynamic quenching constants support significant ion-dipole and orbital-orbital interactions between NOR and cations. The both quenching constants by Cu2+ were the largest among quenchers. Also, quenching mechanism of Cu2+ was somewhat different. The change in the absorption spectra due to the quencher provided information on static quenching. The fluorescence of NOR was relatively insensitive to both the dynamic and static quenching compared with other quinolone antibiotics. This property can be explained by the twisted intramolecular charge transfer.

플래시 메모리 기반의 파일 저장 장치에 대한 성능분석 (Performance Evaluation of Flash Memory-Based File Storages: NAND vs. NOR)

  • 성민영
    • 한국산학기술학회논문지
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    • 제9권3호
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    • pp.710-716
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    • 2008
  • 본 논문은 플래시 메모리를 이용한 파일 저장 장치의 성능 분석을 다룬다. 특히 플래시 메모리의 대표적인 형태인 낸드(NAND) 플래시와 노어(NOR) 플래시에 대해 비교 분석한다. 성능 평가를 위해 마이크로소프트 PocketPC 기반의 실험 플랫폼에 두 플래시 타입을 위한 파일 저장 시스템을 각각 구성하였다. 이렇게 구성된 플랫폼을 이용하여, 버퍼 크기, 사용 용량, 커널 수준 쓰기 캐싱 등의 변수에 따른 입출력 처리량을 측정/비교하였다. 실험 결과에 따르면, 낸드 플래시 기반 저장 장치의 성능이 쓰기/읽기 처리량 관점에서 각각 4.8배, 5.7배까지 더 높은 것으로 나타났다. 본 실험 결과는 두 가지 플래시 메모리 저장 방식의 상대적인 장단점을 잘 보여주고 있으며 플래시 메모리 기반의 파일 저장장치의 설계에 유용하게 활용될 수 있다.

Caerulein으로 유발된 흰쥐의 급성 췌장염에 대한 수념산(手拈散)의 효과 (The Effect of SuJeom-san on Caerulein-induced Acute Pancreatitis in Rats)

  • 박재석;최창원
    • 대한한방내과학회지
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    • 제31권3호
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    • pp.500-512
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    • 2010
  • Objectives : This study was designed to investigate the effects of SuJeom-san(SJS) extract in rats with caerulein-induced acute pancreatitis (AP). Methods : We examined changes of pancreatic weight, histological, immunohistochemical and gene expression of cyclooxygenase (COX-2). Thirty-six adult male Sprague-Dawley rats were divided into six groups as follow: normal(Nor), caerulein-induced (Con), caerulein + cefotaxime sodium(CT), caerulein + SJS 3 mg/kg(SJSA), caerulein + SJS 6 mg/kg(SJSB) and caerulein + SJS 12 mg/kg(SJSC) groups. Pancreatic tissues of rats from all groups were removed for histological observation and light, and electron microscopic examination. Platelet activating factor(PAF) and Interleukin-6(IL-6) levels were determined spectrophotometrically. Results : The ratio of pancreas/body weight was significantly(p<0.05) increased in the Con compared with Nor, but significantly(p<0.05) decreased in SJSA, SJSB, SJSC and CT groups compared with Con. Caerulein administration significantly increased(p<0.05) the levels of amylase, but SJSA, SJSB, SJSC and CT significantly(p<0.05) reduced the levels of these enzymes. The levels of platelet activating factor(PAF) increased in Con compared with Nor, but decreased in SJSA, SJSB, SJSC and CT groups compared with Con. Interleukin-6(IL-6) levels increased significantly in all groups compared to Nor at 6 hrs, but significantly(p<0.05) reduced in SJSA, SJSB, SJSC and CT groups compared with Con at 24 hrs. The levels of tumor necrosis factor(TNF)-${\alpha}$ levels increased in all groups compared to Nor at 6 hrs, but significantly(p<0.05) reduced in SJSA, SJSB, SJSC and CT groups compared with Con at 24 hrs. The COX-2 positive materials were observed in the pancreas of the Con, but these positive materials were decreased in the SJS extract treatment group. Conclusion : SJS is potentially capable of limiting pancreatic damage during AP by restoring the fine structure of acinar cells and tissue; therefore, we conclude that SJS may have beneficial effects in the treatment of caerulein-induced AP.

Keratinocyte Proliferation in Aged Rat Skin by High Voltage Pulsed Current Stimulation

  • Lee Jae-Hyoung;Lee Jong-Sook;Kil Eyn-Young
    • 대한의생명과학회지
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    • 제10권4호
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    • pp.361-366
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    • 2004
  • The purpose of this study was to determine the effect of high voltage pulsed current (HVPC) stimulation on proliferative activities of basal keratinocytes by measured nucleolar organizer region (NOR) expression and thickness of spinous layer in aged rat skin. Fifty-one weeks old twelve male Sprague-Dawley rats (300∼350g) were divided into control and HVPC stimulation groups. Each animal's hair on the back were removed. The HVPC stimulation group received an negative monophasic twin peak pulsed current stimulation with 50 V, while the control group was given the same treatment without electricity. The rats were sacrificed after 3 weeks. The biopsy specimens were fixed in formalin, embedded in paraffin and stained with hematoxyline-eosin and silver nitrate. The thickness of basal to granular layer of the epidennis were measured using a light microscope and computerized image analysis system. The number of argyrophilic nucleolar organizer region (AgNOR) were counted using a light microscope and computerized image analysis system and calculated as the mean number of AgNOR per nucleus in the basal keratinocyte. By using a Student's t-test, an increase in the thickness of basal-spinous layer (P<0.001) of epidermis can be observed in HVPC stimulation rats as compared with the control rats, whereas the thickness of the granular layer is not affected. A Student's t-test showed a significantly higher mean NOR number per nucleus of the basal keratinocyte in the HVPC stimulation rats than control rats (P<0.001). There was significantly positive correlation between the NOR number and the thickness of basal-spinous layer (r=0.80, P<0.05). These results suggest that the HVPC stimulation may increase the thickness of spinous layer in the epidennis due to increased proliferative activities of basal keratinocytes in epidennis in aged rat skin.

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High mRNA expression of GABA receptors in human sperm with oligoasthenoteratozoospermia and teratozoospermia and its association with sperm parameters and intracytoplasmic sperm injection outcomes

  • Kaewman, Paweena;Nudmamud-Thanoi, Sutisa;Amatyakul, Patcharada;Thanoi, Samur
    • Clinical and Experimental Reproductive Medicine
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    • 제48권1호
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    • pp.50-60
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    • 2021
  • Objective: This study investigated the mRNA expression of gamma-aminobutyric acid (GABA) receptors in the sperm of oligoasthenoteratozoospermic (OAT) and teratozoospermic (TER) men compared to normozoospermic (NOR) men, as well as the relationships between GABA receptor expression and sperm parameters, fertilization rate, and embryo quality. Methods: The mRNA expression of GABA A-α1 and GABA B-R2 receptors in sperm was examined using reverse transcription-polymerase chain reaction in three groups of patients: NOR (n=32), OAT (n=22), and TER (n=45). The fertilization rate and embryo quality were assessed in 35 patients undergoing intracytoplasmic sperm injection (ICSI; 10 NOR, 10 OAT, and 15 TER men). Results: OAT men had significantly higher mRNA expression of GABA A-α1 and GABA B-R2 receptors in sperm than NOR men; however, the difference between TER and NOR men was not significant. High levels of these receptors were significantly correlated with low sperm concentration, motility, and morphology, as well as the rate of good-quality embryos (GQEs) at the cleavage stage after ICSI. Patients whose female partners had a >50% GQE rate at the cleavage stage had significantly lower levels of GABA A-α1 receptor expression than those whose partners had a ≤50% GQE rate. Conclusion: Our findings indicate that mRNA levels of GABA receptors in human sperm are correlated with poor sperm quality and associated with embryo development after ICSI treatment. The GABA A-α1 receptor in sperm has a stronger relationship with embryo quality at the cleavage stage than the GABA B-R2 receptor.

Modelling the critical state behaviour of granular soils: Application of NorSand constitutive law to TP-Lisbon sand

  • Antonio Viana da Fonseca;Fausto Molina-Gomez;Cristiana Ferreira;Julieth Quintero
    • Geomechanics and Engineering
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    • 제34권3호
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    • pp.317-328
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    • 2023
  • The soil behaviour can be represented by numerical modelling of element testing using diverse constitutive models. However, not all constitutive models allow the simulation of the stress-strain response at the critical state in granular soils with both contractive and dilative behaviour. Moreover, the accuracy of these models depends highly on the quality of the experimental data used for their calibration. This study addresses the modelling of the critical state behaviour of an alluvial natural soil from the Lower Tagus Valley (south of Portugal), known as TP-Lisbon sand, using the NorSand constitutive law. For this purpose, a series of numerical simulations of element testing was carried out using two algorithms performed in Visual Basic (VB) and Fast Lagrangian Analysis of Continua (FLAC). Moreover, this study presents the characterisation of of NorSand parameters from an accurate experimental programme based on triaxial and bender element testing. This experimental program allowed defining: (i) the critical state locus, (ii) the stress-dilatancy, and (iii) the soil elasticity of TP-Lisbon sand -all fundamental to calibrate the contractive and dilative behaviour of such alluvial soil. The results revealed a good agreement between experimental data and NorSand simulations using VB and FLAC. Therefore, this study showed that the quality of laboratory testing procedures and its good interpretation enables NorSand constitutive law to capture representatively the non-associated plastic strains, often expressed by the state parameter, allowing a representation of soil behaviour of alluvial soils within the critical state soil mechanics framework for different state parameters.

사물인터넷을 위한 새로운 임베디드 메모리 시스템 (New Embedded Memory System for IoT)

  • 이정훈
    • 대한임베디드공학회논문지
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    • 제10권3호
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    • pp.151-156
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    • 2015
  • Recently, an embedded flash memory has been widely used for the Internet of Things(IoT). Due to its nonvolatility, economical feasibility, stability, low power usage, and fast speed. With respect to power consumption, the embedded memory system must consider the most significant design factor. The objective of this research is to design high performance and low power NAND flash memory architecture including a dual buffer as a replacement for NOR flash. Simulation shows that the proposed NAND flash system can achieve better performance than a conventional NOR flash memory. Furthermore, the average memory access time of the proposed system is better that of other buffer systems with three times more space. The use of a small buffer results in a significant reduction in power consumption.