• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.197-201
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.05a
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• pp.8-8
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• 2014

• 전기의세계
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• v.52 no.8
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• pp.41-46
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• 2003

• 유체기계공업학회:학술대회논문집
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• 2004.12a
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• pp.766-767
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• 2004

• The Magazine of the IEIE
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• v.33 no.4 s.263
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• pp.16-27
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• 2006

• The Magazine of the IEIE
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• v.33 no.4 s.263
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• pp.28-38
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• 2006

• IT SoC Magazine
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• s.22
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• pp.46-51
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• 2007

• Journal of Digital Contents Society
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• v.13 no.1
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• pp.129-139
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• 2012

Recently, the smart sensor technologies are rapidly developing in accordance with the technology of implementation in small-size, low-cost, and low power consumption. With these sensor technologies, especially with MEMS and NEMS, the researches on the WSN are actively performing. For the WSN, a network security function is essential even it requires high physical resource level. But the WSN with the smart sensor technologies could not be provided with enough resources for the function because of limited size, computing-power, low-power, and etc. In this paper, we introduce security and key-management protocols of WSN.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.423-423
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• 2005

A carbon nanotube-based nanoelectromechanical device in resonance is examined theoretically. Mechanical deflections are electrically induced and resonantly excited at the fundamental frequency in cantilevered carbon nanotube. The electrically conducting elastic beam with van der Waals interactions at the tip is used for the modeling of the carbon nanotube device. Due to the elastic, electrical, and van der Waals interactions, the total energy of the system shows the unsymmetric two-well potentials. The predictions can be made that the device exhibits its nonlinear dynamic features in the two-well potentials. Also it is predicted that the fundamental frequency of the carbon nanotube device was changed by the nonlinear interactions induced by electrical and van der Waals potentials between carbon nanotube and ground surface of the device.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.647-652
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• 2015

Pull-in voltage model of nano-electro-mechanical system with graphene is investigated for the device optimization. In the pull in voltage model, thickness of graphene layer is assumed to be uniform in vertical and lateral direction. Finite element analysis simulation has verified the feasibility of the suggested model. From the suggested model, pull-in voltage change with graphene thickness and cantilever length can be estimated. Maximum induced stress and graphene thickness have a reciprocal relationship.