• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.72-82
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• 2014

Recently, the size of semiconductor industry market is constantly growing, due to the increase in diffusion of smart-phone, tablet PC and SSD(Solid State Drive). Also, it is expected that the demand for TLC NAND-type flash memory would gradually increase, with the recent release of TLC NAND-type flash memory in the SSD market. There have been a lot of studies on SLC NAND flash memory, but no research on TLC NAND flash memory has been conducted, yet. Also, a test of NAND-type flash memory is depending on a high-priced external equipment. Therefore, this study aims to suggest a structure for an autonomous test with no high-priced external test device by modifying the existing SLC NAND flash memory and MLC NAND flash memory test algorithms and patterns and applying them to TLC NAND flash memory.

• Journal of Internet Computing and Services
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• v.6 no.4
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• pp.47-58
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• 2005

There are two major type of flash memory products, namely, NAND-type and NOR-type flash memory. NOR-type flash memory is generally deployed as ROM BIOS code storage because if offers Byte I/O and fast read operation. However, NOR-type flash memory is more expensive than NAND-type flash memory in terms of the cost per byte ratio, and hence NAND type flash memory is more widely used as large data storage such as embedded Linux file systems. In this paper, we designed an efficient flash memory file system based an Embedded system and presented to make up for reduced to Swapping a weak System Performance to flash file system using NAND-type flash memory, then proposed Swapping algorithm insured to an Execution time. Based on Implementation and simulation studies, Then, We improved performance bases on NAND-type flash memory to the requirement of the embedded system.

• KIPS Transactions on Computer and Communication Systems
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• v.3 no.5
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• pp.129-140
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• 2014

BIST(Built-in self test) is to detect various faults of the existing memory and BIRA(Built-in redundancy analysis) is to repair detected faults by allotting spare. Also, BISR(Built-in self repair) which integrates BIST with BIRA, can enhance the whole memory's yield. However, the previous methods were suggested for RAM and are difficult to diagnose disturbance that is NAND-type flash memory's intrinsic fault when used for the NAND-type flash memory with different characteristics from RAM's memory structure. Therefore, this paper suggests a BISD(Built-in self diagnosis) to detect disturbance occurring in the NAND-type flash memory and to diagnose the location of fault, and BISR to repair faulty blocks.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.26-33
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• 2012

As the flash memory has increased the market share of data storage in imbedded system and occupied the most of area in a system, It has a profound impact on system reliability. Flash memory is divided NOR/NAND-type according to the cell array structure, and is classified as SLC(Single Level Cell)/MLC(Multi Level Cell) according to reference voltage. Although NAND-type flash memory is slower than NOR-type, but it has large capacity and low cost. Also, By the effect of demanding mobile market, MLC NAND-type is widely adopted for the purpose of the multimedia data storage. Accordingly, Importance of fault detection algorithm is increasing to ensure MLC NAND-type flash memory reliability. There are many researches about the testing algorithm used from traditional RAM to SLC flash memory and it detected a lot of errors. But the case of MLC flash memory, testing for fault detection, there was not much attempt. So, In this paper, Extend SLC NAND-type flash memory fault detection algorithm for testing MLC NAND-type flash memory and try to reduce these differences.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.122-130
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• 2013

The demand and the supply are increasing sharply in accordance with the growth of the Memory Semiconductor Industry. The Flash Memory above all is being utilized substantially in the Industry of smart phone, the tablet PC and the System on Chip (SoC). The Flash Memory is divided into the NOR-type Flash Memory and the NAND-type Flash Memory. A lot of study such as the Built-In Self Test (BIST), the Built-In Self Repair (BISR) and the Built-In Redundancy Analysis (BIRA), etc. has been progressed in the NOR-type fash Memory, the study for the Built-In Self Test of the NAND-type Flash Memory has not been progressed. At present, the pattern test of the NAND-type Flash Memory is being carried out using the outside test equipment of high price. The NAND-type Flash Memory is being depended on the outside equipment as there is no Built-In Self Test since the erasure of block unit, the reading and writing of page unit are possible in the NAND-type Flash Memory. The Built-In Self Test equipped with 2 kinds of finite state machine based structure is proposed, so as to carry out the pattern test without the outside pattern test equipment from the NAND-type Flash Memory which carried out the test dependant on the outside pattern test equipment of high price.

• Proceedings of the Korean Information Science Society Conference
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• 2008.06b
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• pp.331-336
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• 2008

최근 플래시 메모리에 기반을 둔 임베디드 시스템의 사용이 급증하고 있다. 이러한 내장형 시스템은 일반적으로 빠른 부팅시간을 제공해야 한다. 하지만 부팅 과정에서 플래시 메모리용 파일 시스템을 초기화하는 마운트 시간은 요구되는 빠른 부팅 시간에 비해 비교적 긴 시간을 요구하며, 이는 플래시 메모리의 크기에 따라 증가하게 된다. 따라서 플래시 메모리용 파일 시스템의 마운트 시간은 내장형 컴퓨터 시스템의 부팅 시간을 지연시키는 가장 큰 요인이 될 것이다. 즉 이를 개선하기 위한 빠른 마운트 기법에 대한 연구가 요구되어진다. 본 논문은 이 점에 초점을 맞추어 플래시 메모리용 파일 시스템의 빠른 마운트 기법을 제안한다. 전체 메모리상에 저장되는 로그 데이터를 언마운트 시점에 플래시 메모리의 특정 영역에 저장해 두었다가 마운트 시점에 다시 읽어 들이는 방법을 사용하여, 로그 데이터를 구성하기 위해 플래시 메모리 전체를 스캔하는 것을 피할 수 있다. 즉 최소한의 메타데이터만을 스캔함으로써 고속으로 마운트를 수행할 수 있게 된다.

• Proceedings of the Korean Information Science Society Conference
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• 2006.06a
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• pp.154-156
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• 2006

플래시 메모리는 다양한 임베디드 시스템에서의 사용 빈도가 높으며, 특히 소형 정보기기의 보조기억장치로 빈번히 쓰이고 있으며, 이동형 정보기기의 경우 배터리를 사용하고 이동성이 중시되기 때문에 사용 중 전력 중단이나 외부의 충격, 환경에 많은 영향을 받게 된다. 플래시 메모리의 효율적인 오류관리를 위해서는 파일 시스템의 사용이 필요한데, 오류 발생시에 빠른 마운팅과 복구는 필수적인 요소가 된다. 본 논문에서는 기존의 JFFS(1)의 다른 NAND 플래시 파일 시스템에 적합한 구조를 설명하고, 실험을 통해 성능을 평가함으로써 NAND 플래시 메모리에 적용하기에 적합한 저널링 방범을 제안한다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.61-71
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• 2014

As the occupancy rate of the flash memory increases in the storage media market for the embedded system and the semi-conductor industry grows, the demand and supply of flash memory is increasing by a big margin. They are especially used in large quantity in the smart phones, tablets, PC, SSD and Soc(System on Chip) etc. The flash memory is divided into the NOR type and NAND type according to the cell arrangement structure and the NAND type is divided into the SLC(Single Level Cell) and MLC(Multi Level Cell) according to the number of bits that can be stored in each cell. Many tests have been performed on NOR type such as BIST(Bulit-In Self Test) and BIRA(Bulit-In Redundancy Analysis) etc, but there is little study on the NAND type. For the case of the existing BIST, the test can be proceeded using external equipments like ATE of high price. However, this paper is an attempt for the improvement of credibility and harvest rate of the system by proposing the BIST for the MLC NAND type flash memory of Finite State Machine structure on which the pattern test can be performed without external equipment since the necessary patterns are embedded in the interior and which uses the MLC NAND March(x) algorithm and pattern which had been proposed for the MLC NAND type flash memory.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.8
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• pp.1962-1969
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• 2009

During past 20 years we have witnessed brilliant advances in major components of computer system, including CPU, memory, network device and HDD. Among these components, in spite of its tremendous advance in capacity, the HDD is the most performance dragging device until now and there is little affirmative forecasting that this problem will be resolved in the near future. We present a new approach to solve this problem using the NAND Flash memory. Researches utilizing Flash memory as storage medium are abundant these days, but almost all of them are targeted to mobile or embedded devices. Our research aims to develop the NAND Flash memory based storage system enough even for enterprise level server systems. This paper present structural and operational mechanism to overcome the weaknesses of existing NAND Flash memory based storage system, and its evaluation.

• Journal of Internet Computing and Services
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• v.7 no.6
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• pp.105-112
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• 2006

This paper be composed to file system by making a new i_node structure which can decrease Write frequency because this's can improved the file system efficiency if reduced Write operation frequency of flash memory in respect of file system, i-node is designed to realize Cleaning policy of data in order to perform Write operation. This paper suggest Cleaning Algorithm for Write operation through a new i_node structure. In addition, this paper have mode the oldest data cleaned and the most recent data maintained longest as a result of experiment that the recent applied program and data tend to be implemented again through the concept of regional and time space which appears automatically when applied program is implemented. Through experiment and realization of the Flash file system, this paper proved the efficiency of NAND-type flash file system which is required in on Embedded system.