• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.66-74
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• 1999

InAlGaAs/InGaAs HBTs with the various emitter junction gradings(xf=0.0-1.0) and the modified collector structures (collector- I;n-p-n, collector-II;i-p-n) are simulated and analyzed by HMC (Hybrid Monte Carlo) method in order to find an optimum structure for the shortest transit time. A minimum base transit time($ au$b) of 0.21ps was obtainsed for HBT with the grading layer, which is parabolically graded from $x_f$=1.0 and xf=0.5 at the emitter-base interface. The minimum collector transit time($\tau$c) of 0.31ps was found when the collector was modified by inserting p-p-n layers, because p layer makes it possible to relax the electric field in the i-type collector layer, confining the electrons in the $\Gamma$-valley during transporting across the collector. Thus InAlGaAs/InGaAs HBT in combination with the emitter grading($x_f$=0.5) and the modified collector-III showed the transit times of 0.87 psec and the cut-off frequency (f$\tau$) of 183 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.164-164
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• 2010

The impurity doped ZnO has been extensively studied because of its optoelectric properties. GIZO (Ga-In-Zn-O) amorphous oxide semiconductors has been widely used as transparent flexible semiconductor material. Recently, various amorphous transparent semiconductors such as IZO (In-Zn-O), GIZO, and HIZO (Hf-In-Zn-O) were developed. In this work, we examined the local structures of IZO, GIZO, and HIZO. The local coordination structure was investigated by the extended X-ray absorption fine structure. The IZO, GIZO and HIZO thin films ware deposited on the glass substrate with thickness of 400nm by the radio frequency sputtering method. The targets were prepared by the mixture of $In_2O_3$, ZnO and $HfO_2$ powders. The percent ratio of In:Zn in IZO, Ga:In:Zn in GIZO and Hf:In:Zn in HIZO was 45:55, 33:33:33 and 10:35:55, respectively. In this work, we found that IZO, GIZO and HIZO are all amorphous and have a similar local structure. Also, we obtained the bond distances of $d_{Ga-O}=1.85\;{\AA}$, $d_{Zn-O}=1.98\;{\AA}$, $d_{Hf-O}=2.08\;{\AA}$, $d_{In-O}=2.13\;{\AA}$.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.54 no.9
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• pp.531-538
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• 2005

This paper proposes an expert system which is able to enhance the accuracy and productivity by determining the test strategy based on heuristic rules for test of the hybrid electronic circuit board producted massively in production line. The test heuristic rules are obtained from test system designer, test experts and experimental results. The guarding method separating the tested device with circumference circuit of the device is adopted to enhance the accuracy of measurements in the test of analog devices. This guarding method can reduce the error occurring due to the voltage drop in both the signal input line and the measuring line by utilizing heuristic rules considering the device impedance and the parallel impedance. Also, PSA(Parallel Signature Analysis) technique Is applied for test of the digital devices and circuits. In the PSA technique, the real-time test of the high integrated device is possible by minimizing the test time forcing n bit output stream from the tested device to LFSR continuously. It is implemented in Visual C++ computer language for the purpose of the implementation of the inference engine using the dynamic memory allocation technique, the interface with the electronic circuit database and the hardware direct control. Finally, the effectiveness of the builded expert system is proved by simulating the several faults occurring in the mounting process the electronic devices to the surface of PCB for a typical hybrid electronic board and by identifying the results.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 1993.10a
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• pp.433-442
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• 1993

Coolstore air relative humidity (RH) is an important factor affecting the quality of horticultural products, particularly via product moisture loss. RH also has an important effect on the performance of the refrigeration evaporators and can affect the strength of paper-based packaging materials. In a large New Zealand apple coolstore, RH increased from about 75% early in season to 90% at the end, as activities in the coolstore and external conditions changed. A steady-state analysis of sensible and latent heat entry and heat removal during four typical operational periods over the season was carried out. Predicted RH was in good agreement with measured dat. For the coolstore studied, evaporator surface area and the occurrence of pre-cooling within the coolstore were the design and operational factors having greatest effect on RH. Door protection and management, and floor insulation were the next more significant factors. The method of analysis has more general application and ould be used in a variety of situations so that design for optimum RH can be performed systematically.

• Journal of Power System Engineering
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• v.13 no.3
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• pp.65-71
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• 2009

This paper presents the energy harvesting technique which is carried out by vibration system with a piezoelectric element. In this study, low frequency characteristics of the piezoelectric element bonded to the aluminum cantilever were experimentally investigated. The piezoelectric element of size of $45L{\times}11W{\times}0.6H$ and piezoelectric constant($d_{31}$ ) of $-180{\times}10^{-12}C/N$ was used. The material of cantilever is an aluminum and two kinds of cantilever of which dimensions are (150, 190)$[mm]{\times}13[mm]{\times}1.5[mm]$ were experimented, respectively. The cantilever was fixed on the magnetic type vibrator and the vibrator was operated by power input with a sine wave. The characteristics of requency and mass variation of cantilever end part such as 0, 2.22, 4.34, 5.87, 8.66, 11.01 [g] were investigated. Finally, this paper suggests a method of generating electrical energy with a piezoelectric element using wind, an energy source that is easily applied and from which we can obtain "clean" energy.

• Journal of Korean Society of Water and Wastewater
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• v.27 no.6
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• pp.703-709
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• 2013

Among many microalgae cultivation types, heterotrophic culture with low cost carbon sources and energy saving culture method is crucial. A result of estimating the effects of pH on wastewater treatment using heterotrophic growing microalgae Chlorella sorokiniana shows that there was no difference in microalgae growth amount and nitrogen, phosphorus removal rate by wide range of pH(5 ~ 9). From pH 5 to 9, total nitrogen, phosphorous and glucose removal rates were 10.5 mg-N/L/d, 2 mg-P/L/d, 800 ~ 1000 mg/L respectively. This study reveals that C. sorokiniana cannot metabolite glycerol heterotrophically, however, glucose and acetate were proper carbon sources for growth and T-N, T-P and TOC removal. This research highlights the potential of heterotrophic microalgal growth with wastewater treatment plant with wide range of pH and carbon sources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.218-222
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• 2017

In this paper, in order to develop excellent composition ceramics for a piezoelectric energy- harvesting device, we synthesized $0.99(Na_{0.52}\;K_{0.443}\;Li_{0.037})(Nb_{0.883}\;Sb_{0.08}\;Ta_{0.037})O_3$ + $0.01(Sr_{0.95}Ca_{0.05})TiO_3$ + $0.3\;wt%\;Bi_2O_3\;+\;0.3\;wt%\;Fe_2O_3\;+\;0.3\;wt%\;CuO$ (abbreviated as NKN-SCT) ceramics with different sintering times, using the ordinary solid-state reaction method. The effect of sintering time on the microstructure and piezoelectric properties was investigated. The ceramics with the sintering time of 7 h have the optimum values of the piezoelectric constant ($d_{33}$), piezoelectric voltage constant ($g_{33}$), planar piezoelectric coupling coefficient (kp), mechanical quality factor (Qm), and dielectric constant (${\varepsilon}r$): $d_{33}=314[pC/N]$, $g_{33}=20.07[10^{-3}mV/N]$, kp = 0.442, Qm = 93, ${\varepsilon}r=1,768$, all being suitable for a piezoelectric energy-harvesting device.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.5
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• pp.938-946
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• 1989

Using the CT specimen of carbon steel(SM45C), we estimated the fatigue crack propagation behavior in stable crack propagation range. Furthermore the fatigue crack propagation rate, Acoustic Emission(AE) count rate, and fractography characteristics were also compared among others. The following results were confirmed by experimental observation. Near-threshold stress intensity factor range(.DELTA. $K_{th}$) is influenced by stress ratio but not at the upper limit of stable crack propagation range. As stress intensity factor range(.DELTA.K) and(or) stress amplitude increase (s), both crack propagation rate(da/dN) and AE count rate(dn/dN) increase. Effective stress intensity factor range(.DELTA. $K_{off}$) determined from the crack closure point measurement by AE method is useful for the evaluation of fatigue crack propagation rate. Fractography in stable crack propagation range showed striation, and agreed with the crack propagation rate obtained either by experiment of by the results of microscopic measurements.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.214-216
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• 2006

In this study, in order to develop the composition ceramics for low loss and low temperature sintering multilayer piezoelectric actuator, PMN-PZN-PZT ceramics were fabricated using two stage calcination method and $Li_2CO_3$, $Bi_2O_3$ and CuO as sintering aids and their piezoelectric characteristics were investigated according to the 2nd calcination and sintering temperature. At the calcination temperature of $750^{\circ}C$ and sintering temperature of $930^{\circ}C$, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant (${\varepsilon}_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum value of $7.94g/cm^2$ 0.581, 1554, 1555 and 356pC/N, respectively for multilayer piezoelectric actuator application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.