• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.

• Current Optics and Photonics
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• v.4 no.4
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• pp.380-390
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• 2020

In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.22 no.3
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• pp.8-16
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• 1986

The fishing conditions of flying squid, ommastrePhes barsram(Lesueur), in the North Pacific Ocean was studied based on the horizontal water temperature data, satellite data from NOAA and statistical data of flying squid fisheries which were collected from 1980 to 1984. The obtained results were as follows; 1. Since 1979, the Korean drift giIlnet fishery for flying squid was launched in North Pacific. Number of operating vessel and catch of flying squid increased gradually every year. The number of vessels were 111 and their annual catches were 42, 977 M/T in 1984. Therefore, Korean drift giIlnet fishery for this species has played an important role in the products of Korean high-sea fisheries. 2. In the beginning of the fisheries, fishing grounds was formed in the west of long. 1800E. In 1982, in consequence of the center which extended eastward, the fishing ground was formed long. 166$^{\circ}$W in the central North Pacific Ocean. Since 1983, the fishing grounds were formed as far as long. 161$^{\circ}$W. The range of general fishing season in the central North Pacific was from June to August. After september, fishing ground was shifted to the west, in the Northwestern Pacific. 3. The Predominant fishing season for the flying squid was August through January of the coming year. Optimum water temperature for flying sguid at surface layer in the Pacific Ocean ranged from 11 $^{\circ}$e to 17$^{\circ}$e in winter, 13$^{\circ}$e to 17$^{\circ}$e in spring, 12. 8$^{\circ}$C to 19.7$^{\circ}$e in summer and 1O.6$^{\circ}$e -18.7$^{\circ}$e in fall. 4. In summer, the Oceanographic condition in the North Pacific Ocean showed that the water temperature at surface layer was lower in 1980, 1983 and higher in 1981, 1982 and 1984 as compared with mean annual water temperature. 5. The characteristics df oceanographic conditions in the fluation, disformation, mixing and other factors of the Kuroshio and Oyashio currents, which have considerably influenced upon the water masses of the areas. 6. The data and information on surface thermal Structure interpreted from Infrared Satellite Imaginary from NOAA-7 and NOAA-8 are very available in estimating water temperature on the areas and investigating the major fishing grounds. 7. According to the fisheries statics of Japanese drift gilInet, the annual catches of flying squid considerably decreased from 225, 942 M/T in 1983 to 133, 217 M/T in 1984. 8. The fishing grounds in the central North Pacific in several fishing seasons were formed as follows: In June, the initial fishing season, the fishing grounds were formed in the vicinity of lat. 35 - 40oN, the central North Pacific east of 179$^{\circ}$E. In July, the fishing ground were formed in the wide arEa of the central North Pacific north of 400N and long. 174$^{\circ}$E-145$^{\circ}$W In Auguest, concentrative fishing operation carried out in :he central North Pacific north of 43$^{\circ}$N and East of 165$^{\circ}$W. On the other hand, in September, main fishing grounds were disappeared and moved to the west.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.190-193
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• 2010

Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1956-1958
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• 1999

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.1-8
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• 2003

In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.