• Journal of Electrochemical Science and Technology
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• 제8권2호
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• pp.115-123
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• 2017

Electrochemical noise signals in many cases exhibit a DC drift that should be removed prior to further data analysis. Polynomial fitting and moving average removal method have been used to remove trends of electrochemical noise (EN) in time domain. The corrosion inhibition of synthesized schiff base N,N'-bis(3,5-dihydroxyacetophenone)-2,2-dimethylpropandiimine on API-5L-X70 steel in hydrochloric acid solutions were used to study the effects of drifts removal methods on noise resistance calculation. Also, electrochemical impedance spectroscopy (EIS) was used to study the corrosion inhibition property of the inhibitor. The results showed that for the calculation of $R_n$, both methods were effective in trend removal and the polynomial with m=4 and MAR with p=40 were in agreement.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.359-364
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• 2000

The paper describes the electron transport characteristics in SP$_{6}$+He gas calculated E/N values 0.1~700[Td] by the Monte Carlos simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters obtained by TOF method. This study gained the values of the electron swarm parameters such as the electron drift velocity the electron ionization or attachment coefficients longitudinal and transverse diffusion coefficients for SF$_{6}$+He gas at a range of E/N.E/N.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2341-2344
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• 1999

In $SiH_4$ + Ar mixture gas contains 0.5% and 5% monosilane, this paper calculated electron swarm parameters in E/N has ratio 1$\sim$300(Td) and P : I (Torr) by MCS and Beq method. Electron swarm parameters showed a irregularity change in Ar mixed a little monosilane. It tends that the electron drift velocity is inversely proportional to E/N. It also represented characteristics that the transverse diffusion coefficient depends on E/N.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1830-1833
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• 1997

This paper describes the electron transport characteristic in $SiH_4$ gas calculated for range of E/N values from $0.5{\sim}300$(Td) using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, longitudinal and transverse diffusion coefficients with the experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at E/N : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

• 전자공학회논문지D
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• 제35D권12호
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• pp.53-58
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• 1998

다결정 실리콘 박막 트랜지스터를 이용한 회로의 성능 향상을 위하여 새로운 구조의 4-terminal buried channel poly-Si TFT(BCTFT)를 설계하고 제작하였다. BCTFT는 moderate 도핑이 된 buried channel을 이용하므로 기존의 다결정 실리콘 TFT보다 ON-전류와 전계 효과 이동도가 n-형과 p-형 소자 각각 5배와 10배 향상되었다. BCTFT는 moderate 도핑된 buried 채널과 counter 도핑된 body 사이의 junction 공핍에 의하여 캐리어의 이동이 억제 되므로 OFF-전류가 증가하지 않았다.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.660-667
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• 1996

The electron transport characteristics in $SF_6$ gas is calculated for range of E/N values from 150 -800(Td) by the Monte Carlo simulation using a set of electron collision cross sections determined by the authors. The results suggest that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in sulphur hexaflouride at E/N:500 and 800(Td) for a case of the equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a Time of Flight method also investigated as a set of electron collision cross section for sulphur Hexaflouride.

• ETRI Journal
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• 제44권3호
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1956-1958
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• 1999

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

• 한국산업융합학회 논문집
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• 제5권1호
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• 전기의세계
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• 제39권3호
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• pp.39-46
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• 1990

반도체 내에서의 전자장 해석을 위한 Maxwell방정식의 단순화, 반도체 방정식의 전개, 물리적인 모델링, 수치해석 기법, 응용분야 및 차세대 반도체 기술 개발을 위한 device simulation 기술등을 review하였다. Poisson방정식의 고유한 quasi-static apporximation을 고찰하였으며, Drift 확산식의 유효성 범위를 증가시키기 위하여 각 물리적인 모델들을 review하였다. 반도체 수치해석에서 빈번히 사용해온 F.D.M.F.E.N.및 B.E.M기법의 장단점과 각각으 수치해석 기법을 이용한 Simulation tool들을 언급하였다. 또한 현재의 반도체 기술과 차세대 반도체 memory기술을 위한 Simulation의 응용분야 및 3차원 Simulation에 필요한 기본적인 tool의 조건을 언급하였다.