• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.613-616
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• 2001

This $SF_{6}$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_{6}$ gas characteristics. Electron transport coefficients in $SF_{6}$-$N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_{6}$-$N_2$ mixture gases.

• 한국지진공학회논문집
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• 제24권1호
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• pp.29-37
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• 2020

This study is to investigate the effect of a retrofitted reinforced concrete frame with non-seismic details strengthened by embedded steel moment frames with an indirect joint, which mitigates the problems of the direct joint method. First, full-scale experiments were conducted to confirm the structural behavior of a 2-story reinforced concrete frame with non-seismic details and strengthened by a steel moment frame with an indirect joint. The reinforced concrete frame with non-seismic details showed a maximum strength of 185 kN at an overall drift ratio of 1.75%. The flexural-shear failure of columns was governed, and shear cracks were concentrated at the beam-column joints. The reinforced concrete frame strengthened by the embedded steel moment frames achieved a maximum strength of 701 kN at an overall drift ratio of 1.5% so that the maximum strength was about 3.8 times that of the specimen with non-seismic details. The failure pattern of the retrofitted specimen was the loss of bond strength between the concrete and the rebars of the columns caused by a prying action of the bottom indirect joint because of lateral force. Furthermore, methods are proposed for calculation of the specified strength of the reinforced concrete frame with non-seismic details and strengthened by the steel moment frame with the indirect joint.

• 디지털콘텐츠학회 논문지
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• 제18권6호
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• pp.1193-1198
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• 2017

본 논문에서 개발된 IGBT 구조는 DC 송배전을 위한 고전력 스위치 반도체로서 사용되며, 빠른 스위칭 속도 및 개선된 항복전압 특성을 확보하여, 향후 신재생 장거리 DC 송전을 위한 중요한 전자 소자로서 이용될 것이 기대되고 있다. 새로운 타입의 차세대 전력 반도체로서, 스위칭 속도를 향상시키면서 동시에 항복 전압의 특성을 개선시켜, 전력 손실 특성을 줄이도록 설계되었고, 높은 전류 밀도의 장점을 동시에 획득 가능하다. 이러한 개선된 특성은 Planar IGBT의 N-drift 영역에 $SiO_2$를 추가로 도입함으로서 얻어지며, Sentaurus TCAD 시뮬레이션 툴을 사용하여, 비교 분석하였다.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.22-23
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

• 전기학회논문지P
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• 제60권1호
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• pp.27-31
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• 2011

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The electron energy distribution function has been analysed in $CF_4$ at E/N=5, 10, 100, 200 and 300[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.67-73
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• 1998

In this paper, the electron swarm parameters in the 0.5% and 0.2% SF\ulcorner+Ar mixtures are measured by time of flight method over the E/N(Td) range from 30 to 300(Td). The measurements have been carried out by the double shutter drift tube with variable drift distance from the cathod. A two-term approximation of the boltzmann equation analysis and Monte Carlo simulation have been also used to study electron transport coefficients. We have calculated W, $ND_L,\;ND_T,\;\alpha,\;\eta,\;\alpha-\eta$, and the limiting breakdown electric field to gas mixtures ratio in pure $SF_6$+Ar mixtures. The electron energy distribution function has been analysed in $SF_6$+Ar mixtures at E/N : 200(Td) for a case of the equilibrium region in the mean electron energy. The measured results and the calculated results have been compared each other.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.