• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1413-1415
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• 1994

A novel magnetotransistor using a separated drift field with the guard ring around the emitter has been designed and fabricated. The operating principle of the proposed magnetic field sensor is based on the emitter injection modulation. The $p^+$ guard ring around the n-type emitter confines drifted electrons in the emitter, hence the induced Hall voltage in the emitter is increased. The measured relative sensitivity of the separated drift magnetotransistor with the guard ring is about 100 times larger than that without the guard ring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.451-452
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• 2007

Drift velocities for electrons in $SF_6$-Ar mixtures gas by simulation has been analysed over the EIN range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients. longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.934-941
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• 2000

We measured the electron transport coefficients, the electron drift velocity W and the longitudinal diffusion coefficient $D_{L}$ in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures over the E/N range from 0.01 Td to 100 Td by the double shutter drift tube, and compared the measured results by Hunter et al. with those. We determined the inelastic collision cross sections for the $C_{3}F_{8}$ molecule by the comparison of the present measurements and the calculation of electron transport coefficients in the $C_{3}F_{8}$-Ar mixtures by using a multi-term Boltzmann equation analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.185-188
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• 2002

This paper describes the information for quantitative simulation of weakly ionized plasma. We should grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, the drift velocity of electron in $SF_6+O_2$ mixture gas calculated for range E/N values l~900[Td] at the temperature is 300[$^{\circ}K$] and pressure is 1[Torr], using a set of electron collision cross sections determined by the authors and the values of drift velocity of electrons are obtained for TOF, PT, SST sampling method of Backward Prolongation by two term approximation Boltzmann equation method. It has also been used to predict swarm parameter using the values of cross section as input. The result of Boltzmann equation, the drift velocity of electrons, has been compared with pure $SF_6$, pure $O_2$ and mixture gas.

• Structural Engineering and Mechanics
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• v.53 no.5
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• pp.1031-1049
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• 2015

This paper highlights the role of innovative vibration control system based on two promising properties in a parallel configuration. Hybrid device consists of two main components; recentering wires of shape memory alloy (SMA) and steel pipe section as an energy dissipater element. This approach concentrates damage in the steel pipe and prevents the main structural members from yielding. By regulation of the main adjustable design parameter, an optimum performance of the device is obtained. The effectiveness of the device in passive control of structures is evaluated through nonlinear time history analyses of a five-story steel frame with and without the hybrid device. Comparing the results proves that the hybrid device has a considerable potential to mitigate the residual drift ratio, peak absolute acceleration and peak interstory drift of the structure.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.54 no.1
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• pp.29-33
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• 2005

Energy distribution function for electrons in $SF_6$-Ar mixtures gas by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300$[Td] by a two term Boltana equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other, authors, experimentally the electron swarm parameters for 0.2[%} and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method. The result show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The results obtained from Booltemann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.169-174
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• 2001

The electron transport coefficients(the electron drift velocity, W, and the longitudinal and transverse diffusion coefficient, D$_{L}$ and D$_{T}$) in SiH$_4$-Ar mixtures containing 0.5% and 5.0% monosilane were calculated over the E/N range from 0.01 to 300 Td and over the gas pressure range 0.5, 1.0 and 1.5 Torr by the time-of-flight(TOF) method of the Boltzmann equation(BE.) and Monte-Carlo simulation(MCS). The electron energy distribution function in each SiH$_4$-Ar mixtures at E/N=10 Td and L=0.2 cm, which in equilibrium region in the mean electron enregy were compared.red.

• Journal of the Korean Society of Industry Convergence
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• v.4 no.3
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• pp.329-337
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• 2001

This simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only stationary characteristics but also non - stationary characteristics of a MOSFET. It solves basic semiconductor devices equations including Possion equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method. The conventional semiconductor device simulation technique, based on the Drift-Diffusion Model (DDM), neglects the thermal and other energy-related properties of a miniaturized device. I, therefore, developed a simulator based on the Thermally Coupled Energy Transport Model (TCETM) which treats not only steady-state but also transient phenomena of such a small-size MOSFET. In particular, the present paper investigates the breakdown characteristics in transient conditions. As a result, we found that the breakdown voltage has been largely underestimated by the DDM in transient conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.169-174
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• 1996

In this paper, the electron transport characteristic in CF$_4$has been analysed over the E/N range 1~300(Td) by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The alteration of cross sections from the literature is avoided as much as possible in the analysis. The motion has been calculated to give swarm parameters for the electron drift velocity(W), diffusion coefficient(D$_{L}$), the ratio of the diffusion coefficient to the mobility(D$_{L}$/$\mu$), mean energy($\varepsilon$), the electron energy distribution function. The electron energy distribution function has been analysed in CF$_4$at E/N=50, 100 and 200(Td) for a case of the equilibrium region in the mean electron energy. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi.shi.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1621-1623
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• 1997

The breakdown voltage of SOI RESURF (REduce SURface Field) diode using a SIPOS (Semi Insulating POlycrystalline Silicon) layer is verified in terms of n-drift layer length and surface oxide thickness by device simulator MEDICI, and compared with conventional SOI RESURF diode. Increasing the n-drift layer length, the breakdown voltage of SOI RESURF diode using the SIPOS layer have increased and saturated at $8{\mu}m$. And it has decreased with increasing the surface oxide thickness.