• Journal of IKEEE
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• v.26 no.3
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• pp.333-340
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• 2022

Process and device simulations were performed to determine the optimal ion implantation conditions to prevent double snapback of high voltage operating DDDNMOS (double diffused drain N-type MOSFET) device for ESD protection. By examining the effects of HP-Well, N^- drift and N⁺ drain ion implantation on the double snapback and avalanche breakdown voltages, it was possible to prevent double snapback and improve the electrostatic protection performance. If the ion implantation concentration of the N^- drift region rather than the HP-Well region is optimally designed, it prevents the transition from the primary on-state to the secondary on-state, so that relatively good ESD protection performance can be obtained. Since the concentration of the N^- drift region affects the leakage current and the avalanche breakdown voltage, in the case of a process technology with an operating voltage greater than 30V, a new structure such as DPS or colligation of optimal process conditions can be applied. In this case, improved ESD protection performance can be realized.

• Journal of KIISE
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• v.43 no.6
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• pp.718-723
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• 2016

In streaming data analysis, detecting concept drift accurately is important to maintain the performance of classification model. Error rates are usually used for concept drift detection. However, by describing prediction results with only binary values of 0 or 1, useful information about a behavior pattern of a classifier can be lost. In this paper, we propose an effective concept drift detection method which describes performance pattern of a classifier by utilizing probability estimates for class prediction and detects a significant change in a classifier behavior. Experimental results on synthetic and real streaming data show the efficiency of the proposed method for detecting the occurrence of concept drift.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.179-179
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• 2011

관통전극(TSV, Trough Silicon Via) 기술은 전자부품의 소형화, 고성능화, 생산성 향상을 이룰 수 있는 기술이다. Cu는 현재 배선 기술에 적용되고 있고 전기적 저항이 낮아서 TSV filling 재료로 사용된다. 하지만 확산 방지막에 의해 완벽히 감싸지지 않는다면, Cu+은 빠르게 절연막을 통과하여 Si 웨이퍼로 확산된다. 이런 현상은 절연막의 누설과 소자의 오동작 등의 신뢰성 문제를 일으킬 수 있다. 현재 TSV의 제조와 열 및 기계적 응력에 관한 연구는 활발히 진행되고 있으나 Biased-Thermal Stress(BTS) 조건하의 Cu 확산에 관한 연구는 활발하지 않는 것이 실정이다. 이를 위해 본 연구에서는 TSV용 Cu 확산 방지막 Ti에 대해 Cu+의 drift 억제 특성을 조사하였다. 실험을 위해 Cu/확산 방지막/Thermal oxide/n-type Si의 평판 구조를 제작하였고 확산 방지막의 두께에 따른 영향을 조사하기 위해 Ti의 두께를 10 nm에서 100 nm까지 변화하였으며 기존 Cu 배선 공정에서 사용되는 확산 방지막 Ta와 비교하였다. 그리고 Cu+의 drift 측정을 위해 Biased-Thermal Stress 조건(Thermal stress: $275^{\circ}C$, Bias stress: +2MV/cm)에서 Capacitance 및 Timedependent dielectric breakdown(TDDB)를 측정하였다. 그 결과 Time-To Failure(TTF)를 이용하여 Cu+의 drift를 측정할 수 있었으며, 확산 방지막의 두께가 증가할수록 TTF가 증가하였고 물질에 따라 TTF가 변화하였다. 따라서 평판 구조를 이용한 본 실험의 Cu+의 drift 측정 방법은 향후 TSV 구조에서도 적용 가능한 방법으로 생각된다.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.7-11
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• 2001

We measured the electron transport coefficients, the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_{L}$, over the E/N range from 0.03 to 100 Td and gas pressure range from 0.133 to 122 kPa in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures by the double shutter drift tube with variable drift distance. And we calculated these electron transport coefficients by using multi-term approximation of Boltzmann equation analysis. We determined the electron collision cross sections set for $C_{3}F_{8}$ molecule by the comparison of measurement and calculation. Our special attention in the present study was focused upon the inelastic collision cross sections of the $C_{3}F_{8}$ molecule.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.301-306
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• 2006

The electron drift velocity W and the product of the longitudinal diffusion coefficient and the gas number density $ND_{L}$ in the $0.525\;\%$ and $5.05\;\%$ $C_{3}F_8-Ar$ mixtures were measured by using the double shutter drift tube with variable drift distance over the E/N range from 0.03 to 100 Td and gas pressure range from 1 to 915 torr. And we determined the electron collision cross sections set for the $C_{3}F_8$ molecule by STEP 1 of electron swarm method using a multi-term Boltzmann equation analysis. Our special attention in the present study was focused upon the vibrational excitation and new excitations cross sections of the $C_{3}F_8$ molecule.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.48 no.1
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• pp.10-19
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• 2012

The mesh selectivity of a drift net for yellow croaker (Larimichthys polyactis) was examined in field experiments with six different net mesh size (40, 45, 50, 55, 60 and 65mm) from April to December, 2008 in the coastal areas of Jeollanam-do in Korea. The total catch of 6,748 consisted of yellow croaker (n=6,310; 89.1% of total catch), common mackerel (n=158; 5.6%) and other species (n=280; 9.6%). The selectivity curve for yellow croaker was fit by the models of selectivity curve in SELECT method. The optimal mesh size for 50% retention for minimum landing size (191mm) of yellow croaker was estimated as 49.6mm-51mm by selectivity curves. And the bi-normal model for the selectivity curve was found to fit the data best.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.844-847
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• 2001

In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.9-18
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• 2005

Analytical expressions for breakdown voltages of abrupt $p^{+}n$ junction of Si, GaAs, InP and In$In_{0.53}Ga_{0.47}AS$ were induced. Getting analytical breakdown voltages, effective ionization coefficients were extracted using lucky drift parameters of Marsland for each materials. The results of analytical breakdown voltages followed by ionization integral agreed well with experimental result within 10$\%$ in error for the doping concentration in the range of $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$.

• Journal of The Korean Astronomical Society
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• v.45 no.5
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• pp.127-138
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• 2012

We explore how wave-particle interactions affect diffusive shock acceleration (DSA) at astrophysical shocks by performing time-dependent kinetic simulations, in which phenomenological models for magnetic field amplification (MFA), Alfv$\acute{e}$nic drift, thermal leakage injection, Bohm-like diffusion, and a free escape boundary are implemented. If the injection fraction of cosmic-ray (CR) particles is ${\xi}$ > $2{\times}10^{-4}$, for the shock parameters relevant for young supernova remnants, DSA is efficient enough to develop a significant shock precursor due to CR feedback, and magnetic field can be amplified up to a factor of 20 via CR streaming instability in the upstream region. If scattering centers drift with Alfv$\acute{e}$n speed in the amplified magnetic field, the CR energy spectrum can be steepened significantly and the acceleration efficiency is reduced. Nonlinear DSA with self-consistent MFA and Alfv$\acute{e}$nic drift predicts that the postshock CR pressure saturates roughly at ~10 % of the shock ram pressure for strong shocks with a sonic Mach number ranging $20{\leq}M_s{\leq}100$. Since the amplified magnetic field follows the flow modification in the precursor, the low energy end of the particle spectrum is softened much more than the high energy end. As a result, the concave curvature in the energy spectra does not disappear entirely even with the help of Alfv$\acute{e}$nic drift. For shocks with a moderate Alfv$\acute{e}$n Mach number ($M_A$ < 10), the accelerated CR spectrum can become as steep as $E^{-2.1}$ - $E^{-2.3}$, which is more consistent with the observed CR spectrum and gamma-ray photon spectrum of several young supernova remnants.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.116-119
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• 2010

Adsorption structures of the self-assembled thin films of $\alpha$-cyano-4-hydroxycinnamic acid (CHCA) anchoring on $TiO_2$ surfaces have been studied by using temperature-dependent diffuse reflectance infrared Fourier-transform (DRIFT) spectroscopy. From the presence of the strong $\nu(COO^-)$ band at ~1390 $cm^{-1}$ along with the disappearance of the OH bands in the carboxylic acid group in the DRIFT spectra at room temperature, CHCA appeared to adsorb onto $TiO_2$ surfaces as a carboxylate form. The absence of the out-of-plane benzene ring modes of CHCA in the DRIFT spectra suggests a rather vertical orientation of CHCA on $TiO_2$. Above ~220$ ^{\circ}C$, CHCA seemed to start to thermally degrade on $TiO_2$ surfaces referring from the disappearance of most vibrational modes in the DRIFT spectra, whereas the $\nu$(C ≡ N) bands were found to remain relatively conspicuous as the temperature increased even up to ~460$^{\circ}C$.