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Analytical Breakdown Voltages of $p^{+}n$ Junction in Power Semiconductor Devices  

Chung, Yong Sung (서라벌대학 멀티미디어과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.10, 2005 , pp. 9-18 More about this Journal
Abstract
Analytical expressions for breakdown voltages of abrupt $p^{+}n$ junction of Si, GaAs, InP and In$In_{0.53}Ga_{0.47}AS$ were induced. Getting analytical breakdown voltages, effective ionization coefficients were extracted using lucky drift parameters of Marsland for each materials. The results of analytical breakdown voltages followed by ionization integral agreed well with experimental result within 10$\%$ in error for the doping concentration in the range of $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$.
Keywords
Analytical breakdown voltages; Si; GaAs; InP;
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