• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.12-16
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• 2000

The electrical characteristics of n-channel LDD structured poly-Si TFT's have been systematically investigated. It have been found that the LDD regions act as the effect of series resistance and reducing the electric field. Kink effect is disappeared and off current is greatly reduced, while on current is slightly reduced. On/off current ratio graph shows that LDD device's switching characteristic is better than that of conventional device. As a result of study, it is concluded that the effect of electric field's reduction is more dominant than that of series resistance.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1713-1715
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• 1996

The $NO_2$ GAS Sensitivity characteristic of CuTBP(Copper-tetra-tert-butylphthalocyanine) LB films were investigated through a study of current-voltage (I-V) characteristics with a variation of number of electrode finger pairs N ($1{\sim}25$). A concentration of 200ppm $NO_2$ gas was used. It was found that a conductance G increases monotonically as the number of interdigital electrode increases, and a Sensitivity, Reproducibility is stable. As far as a current is concerned, the current when N=25 is greater than that when N=1 by 70 or so. It indicates that the number of interdigital electrodes affects the current, sensitivity and stability. We knew that the $NO_2$ gas detector application possibility using a current of N=25.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1978-1982
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• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.103-112
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• 2005

In this paper, in order to derive the current-voltage characteristics of n-AlGaN/GaN HEMTs with the piezoelectric and spontaneous polarizations, we suggested analytical solutions for the two-dimensional Poisson equation in the AlGaN and GaN regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing in the quantum well. Obtained expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the cutoff voltage decreases as drain voltage increases. Compared with the conventional models, the present model seems to provide more reasonable explanation for the drain-induced threshold voltage roll-off and the channel length modulation effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.55-58
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• 1996

A new type CuN/Cu/CuN thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the CuxN thin film was in the range of 20∼40(N) under the conditions of the N$_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450v and substrate bias voltage of -100V. The adhesive force was depended on the N$_2$ partial Pressure, discharge current and substrate bias voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.203-209
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• 2000

This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.4
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• pp.214-214
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• 2004

This paper describes a busbar current differential relay in conjunction with a current transformer(CT) compensating algorithm irrespective of the level of the remanent flux. The compensating algorithm detects the start of first saturation if the third-difference function of the current exceeds the threshold; it estimates the core flux at the first saturation start by inserting the negative value of the third-difference function of the current into the magnetization curve; thereafter, it calculates the core flux during the fault and compensates the distorted current using the magnetization curve. The algorithm estimates the correct secondary current irrespective of the level of the remanent flux and needs no saturation point of the magnetization curve. The proposed relay can improve not only security of the relay on an external fault with CT saturation but sensitivity of the relay on an internal fault; the relay can improve the operating speed on n internal fault with CT saturation. This paper concludes by implementing the relay into a digital signal processor based prototype relay.

• Korean Journal of Veterinary Research
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• v.32 no.2
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• pp.157-164
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• 1992

Changes in the both inward current and conductance of membrane by the fertilization were observed using the one microelectrode voltage clamp(or switch clamp) technique. Unfertilized eggs and both 1- and 2-cell stage eggs after fertilization were donated from the superovulated mouse (ICR, more than 6 weeks old) treated with PMSG(pregnant mare serum gonadotropin, Sigma) and HCG(human chorionic gonadotropin, Sigma) and naturally mated ones, respectively in this experiment. Membrane potential was held at -90mV and the voltage step was applied from -80mV to 50mV with interval of 10mV or 20mV for 300ms. since both of amplitudes and time courses in the membrane currents were various according to the states of cells and clamping condition, results were presented by their $averages{\pm}SEM$(standard mean error)and ratios or percentages. Inward currents began to appear in response to the step depolarization from -60mV and reached its maximum at -50mV. However, since the potential was not clamped evenly during the voltage step, current-voltage(I-V) relationship might be positively shifted 10 or 20mV. From the steady-state currents plotted in the I-V curve, outward rectification was markedly observed. Peak inward currents$(i_{in})$ at -50mV were $-0.62{\pm}0.23nA$(n=4),$-0.52{\pm}0.25nA$(n=5) and $-0.37{\pm}0.25nA$(n=6), in the 1-cell stage, 2-cell stage fertilized eggs and in the unfertilized eggs, respectively. Pure inward current (difference between steady-state and peak, $i_{in. pure}$) were $-1.01{\pm}0.23nA$, $-0.69{\pm}0.43nA$ and $-0.68{\pm}0.29nA$, respectively in the 1-cell stage fertilized eggs, unfertilized eggs and 2-cell stage fertilized eggs. These results suggested that the outward current in fertilized eggs of 2-cell stage was more increased than those in the unfertilized eggs. Pure inward currents in the all stages of eggs showed a similar fashion in the I-V relationship from -50mV to 50mV and reversal potential at 50mV. Time constant of inactivation$({\tau})$ in the inward current was decreased as the membrane potential was depolarized in the unfertilized and 2-cell stage eggs but in the 1-cell stage eggs t was not likely to be affected significantly. Slope conductances were 14.2nS, 8.9n5 and 7.7nS in the 1-cell, 2-cell stage fertilized eggs and the unfertilized eggs, respectively. Membranes between two cells within a zona pellucida seem to be electrical-connected in the 2-cell stage eggs from the observation made in the analysis for the electronic spread and decay to the current stimuli. Both of inward current and membrane conductance were increased after fertilization in the mouse eggs. Inward current seems to be carried by the same ion or through the same channels up to the 2-cell stage and ion that carried inward current was thought to play important function after fertilization in the mouse eggs.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.861-866
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• 2012

A dense nanostructured TiN-AlN composite was prepared from high-energy ball milled TiN-AlN mixture powders by pulsed current activated sintering (PCAS). A highly dense TiN-AlN bulk composite was obtained within 2 minutes at $1500^{\circ}C$ with the simultaneous application of 80 MPa pressure and pulsed current. The fine crystalline structure of the TiN-AlN mixture, which was obtained by high-energy milling, was effectively maintained during PCAS and resulted in the enhancement of the mechanical properties. The micro hardness and fracture toughness of TiN-AlN composite were $1780kg/mm^2$ and $5MPa.m^{1/2}$, respectively. The mechanical properties were higher than monolithic AlN or TiN.