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An Analytical Model for the I-V Characteristics of a Short Channel AlGaN/GaN HEMT with Piezoelectric and Spontaneous Polarizations  

Oh Young-Hae (School of Electronic & Electrical Engineering, Hongik University)
Ji Soon-Koo (School of Electronic & Electrical Engineering, Hongik University)
Suh Chung-Ha (School of Electronic & Electrical Engineering, Hongik University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.12, 2005 , pp. 103-112 More about this Journal
Abstract
In this paper, in order to derive the current-voltage characteristics of n-AlGaN/GaN HEMTs with the piezoelectric and spontaneous polarizations, we suggested analytical solutions for the two-dimensional Poisson equation in the AlGaN and GaN regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing in the quantum well. Obtained expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the cutoff voltage decreases as drain voltage increases. Compared with the conventional models, the present model seems to provide more reasonable explanation for the drain-induced threshold voltage roll-off and the channel length modulation effect.
Keywords
GaN-based HEMT; short channel AlGaN/GaN HEMT;
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Times Cited By KSCI : 1  (Citation Analysis)
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