• 대한수학회지
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• 제33권4호
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• pp.891-908
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• 1996

Let (X,d) be a metric space and let T be a mapping from X into itself. We say that a metric space (X,d) is T-orbitally complete if every Cauchy sequence of the form ${T^{n_i}x}_{i \in N}$ for $x \in X$ converges to a point in X.

• Nonlinear Functional Analysis and Applications
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• 제27권3호
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• pp.569-585
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• 2022

A brief comparative survey of some generalizations of a metric space with three dimensional metric structures and different forms of the triangle inequality is done along with their topological properties. Then a common fixed point is obtained for reciprocally continuous and compatible self-maps in a G-metric space. Further, a common fixed point theorem is proved for a pair of weakly compatible self-maps on a G-metric space with the common limit range property.

• 화훼연구
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• 제18권4호
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• pp.284-290
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• 2010

본 연구는 우리나라 전통 참나리중 본 연구에서는 경남 진주시에서 선발한 참나리 변이체의 생장과 형태적 특성, 그리고 배수체 검사와 virus 검정 등을 실시하여, 기존 참나리 품종과는 다른 자가결실성 2배체 품종으로 선발하여 조경지피용 소재 및 나리속 식물의 육종시 유전자원으로 이용할 수 있는 기초자료로 이용하고자 하였으며, 얻어진 결과는 다음과 같다. 선발된 자가결실 참나리 2배체 품종의 생육형은 고성형으로 자생 3배체 품종과 동일하였고 주아도 공히 형성하였다. 꽃의 형태적 특성 및 잎의 형태적 특성등은 큰 차이를 보이지 않은 반면 주아의 크기 및 구근의 크기에서는 큰 차이를 보여 품종간 차이를 나타내었다. 자가결실율에서는 자가결실성 2배체 품종의 경우 착과율이 72.6%로 높은 결실율을 보인 반면 자생 3배체 품종은 0%로 자가 불화합성을 보였다. 또한 염색체 조사결과 자가결실 품종의 경우 염색체수가 26개로서 x = 13의 2배체 품종으로 확인되었으며 자생 참나리의 경우 염색체 수가 39개로서 3배체 품종임이 증명되었다. 선발된 자가 결실성 품종의 경우 후대검정을 실시한 결과 생육 특성 및 형태적 특성, 그리고 결실 습성까지 모본과 동일하여 모본의 특성이 후대에도 유전되는 것을 증명할 수 있었고 염색체 조사결과 2n = 26으로 2배체임이 증명되었다. 자가 결실성 참나리 2배체 품종의 화분발아력을 조사한 결과 모본의 화분발아력이 58%로 양호하였으며 종자 및 주아로 번식된 3년생 식물체와 2년생 식물체 공히 화분발아력이 50% 이상으로 나타났다. 그러나 자생 참나리의 화분발아력은 0%로 전혀 발아가 되지 않았다.

• 대한수학회논문집
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• 제26권3호
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• pp.339-348
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• 2011

A ring R is called symmetric, if abc = 0 implies acb = 0 for a, b, c ${\in}$ R. An ideal I of a ring R is called symmetric (resp. radically-symmetric) if R=I (resp. R/$\sqrt{I}$) is a symmetric ring. We first show that symmetric ideals and ideals which have the insertion of factors property are radically-symmetric. We next show that if R is a semicommutative ring, then $T_n$(R) and R[x]=($x^n$) are radically-symmetric, where ($x^n$) is the ideal of R[x] generated by $x^n$. Also we give some examples of radically-symmetric ideals which are not symmetric. Connections between symmetric ideals of R and related ideals of some ring extensions are also shown. In particular we show that if R is a symmetric (or semicommutative) (${\alpha}$, ${\delta}$)-compatible ring, then R[x; ${\alpha}$, ${\delta}$] is a radically-symmetric ring. As a corollary we obtain a generalization of [13].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• 호남수학학술지
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• 제37권1호
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• pp.135-147
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• 2015

Owing to the notion of a normal adjacency for a digital product in [8], the study of product properties of digital topological properties has been substantially done. To explain a normal adjacency of a digital product more efficiently, the recent paper [22] proposed an S-compatible adjacency of a digital product. Using an S-compatible adjacency of a digital product, we also study product properties of digital topological properties, which improves the presentations of a normal adjacency of a digital product in [8]. Besides, the paper [16] studied the product property of two digital covering maps in terms of the $L_S$- and the $L_C$-property of a digital product which plays an important role in studying digital covering and digital homotopy theory. Further, by using HS- and HC-properties of digital products, the paper [18] studied multiplicative properties of a digital fundamental group. The present paper compares among several kinds of adjacency relations for digital products and proposes their own merits and further, deals with the problem: consider a Cartesian product of two simple closed $k_i$-curves with $l_i$ elements in $Z^{n_i}$, $i{\in}\{1,2\}$ denoted by $SC^{n_1,l_1}_{k_1}{\times}SC^{n_2,l_2}_{k_2}$. Since a normal adjacency for this product and the $L_C$-property are different from each other, the present paper address the problem: for the digital product does it have both a normal k-adjacency of $Z^{n_1+n_2}$ and another adjacency satisfying the $L_C$-property? This research plays an important role in studying product properties of digital topological properties.

• Kyungpook Mathematical Journal
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• 제59권4호
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• pp.603-615
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• 2019

Let R be an associative unital ring with an endomorphism α and α-derivation δ. The constant products of elements in Ore extension rings, when the coefficient ring is reversible, is investigated. We show that if f(x) = ∑ⁿ_i=0 a_ixⁱ and g(x) = ∑^m_j=0 b_jx^j be nonzero elements in Ore extension ring R[x; α, δ] such that g(x)f(x) = c ∈ R, then there exist non-zero elements r, a ∈ R such that rf(x) = ac, when R is an (α, δ)-compatible ring which is reversible. Among applications, we give an exact characterization of the unit elements in R[x; α, δ], when the coeficient ring R is (α, δ)-compatible. Furthermore, it is shown that if R is a weakly 2-primal ring which is (α, δ)-compatible, then J(R[x; α, δ]) = N iℓ(R)[x; α, δ]. Some other applications and examples of rings with this property are given, with an emphasis on certain classes of NI rings. As a consequence we obtain generalizations of the many results in the literature. As the final part of the paper we construct examples of rings that explain the limitations of the results obtained and support our main results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.239-239
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• 2010

This paper describes the design and analysis of AlN piezoelectric micro generator. The generator was designed to convert ambient vibration energy to electrical power as a AlN piezoelectric material compatible with integataion process. From the simulation results, the resonance frequency of designed model is about 360 Hz and analyzed the bending mode, displacement and expectation output.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권2호
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• pp.72-75
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• 2006

A CMOS compatible Super Junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and P-substrate to achieve global charge balance between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on-resistance, and reduced sensitivity to doping imbalance in the pillars.

• 한국수학교육학회지시리즈B:순수및응용수학
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• 제21권3호
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• pp.165-181
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• 2014

We establish a common n-tupled fixed point theorem for hybrid pair of mappings under new contractive condition. It is to be noted that to find n-tupled coincidence point, we do not use the condition of continuity of any mapping involved. An example supporting to our result has also been cited. We improve, extend and generalize several known results.