1 |
P. M. Shenoy, A. Bhalla, and G. M. Donly, 'Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET,' Proc. Int. Symp. Power Semiconductor Devices and ICs(ISPSD), pp. 99-102, 1999
DOI
|
2 |
J. S. Ajit, D. Kinzer and N. Ranjan, '1200V high-side lateral MOSFET in junction-isolated power IC technology using two field-reduction layers,' Proc. Int. Symp. Power Semiconductor Devices and ICs(ISPSD), pp. 230-234. 1993
DOI
|
3 |
D. J. Coe, 'High voltage semiconductor device,' U.S. Patent 4754310, 1988
|
4 |
X. B. Chen, 'Semiconductor power devices with alternating conductivity type high voltage breakdown region,' U.S. Patent 5216275, 1993
|
5 |
J. Tihanyi, 'Power MOSFET,' U.S. Patent 5438215, 1995
|
6 |
Fujihira, 'Theory of semiconductor superjunction devices,' J. J. Appl. Phys., Vol. 36, pp. 6254-6262, 1997
DOI
|
7 |
G. Deboy, M. Marz, J. P. Stengl, H. Strack, J. Tihany and H. Weber, 'A new generation of high voltage MOSFETs breaks the limit line of silicon,' IEDM Tech. Dig., pp. 683-685, 1998
DOI
|
8 |
L. Lorenz, G. Deboy, A. Knapp, and M. Marz, 'COOL-MOSTM - a new milestone in high voltage power MOS,' Proc. Int. Symp. Power Semiconductor Devices and ICs(ISPSD), pp. 3-10, 1999
DOI
|
9 |
S. G. Nassif-Khalil and C. A. T. Salama, 'Super junction LDMOST in silicon-an-sapphire technology (SJ-LDMOST),' Proc. Int. Symp. Power Semiconductor Devices and ICs(ISPSD), pp. 81-84, 2002
DOI
|