• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Journal of applied mathematics & informatics
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• 제40권3_4호
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• pp.409-431
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• 2022

In this paper, we deal with the existence of solutions of the following system of nonlinear rational difference equations with order five $x_{n+1}=\frac{y_{n-3}x_{n-4}}{y_n(a+by_{n-3}x_{n-4})}$, $y_{n+1}=\frac{x_{n-3}y_{n-4}}{x_n(c+dx_{n-3}y_{n-4})}$, n = 0, 1, ⋯, where parameters a, b, c and d are not executed at the same time and initial conditions x_-4, x_-3, x_-2, x_-1, x₀, y_-4, y_-3, y_-2, y_-1 and y₀ are non zero real numbers.

• Journal of applied mathematics & informatics
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• 제42권2호
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• pp.353-366
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• 2024

A total coloring of a graph G is an assignment of colors to both the vertices and edges of G, such that no two adjacent or incident vertices and edges of G are assigned the same colors. In this paper, we have discussed the total coloring of M(T_n), M(D_n), M(DT_n), M(AT_n), M(DA(T_n)), M(Q_n), M(AQ_n) and also obtained the total chromatic number of M(T_n), M(D_n), M(DT_n), M(AT_n), M(DA(T_n)), M(Q_n), M(AQ_n).

• 대한수학회지
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• 제54권3호
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• pp.967-986
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• 2017

We give the necessary condition for an operator defined on a cartesian product of $c_0(\mathcal{X})$ spaces to be summing or dominated and we show that for the multiplication operators this condition is also sufficient. By using these results, we show that ${\Pi}_s(c_0,{\ldots},c_0;c_0)$ contains a copy of $l_s(l^m_2{\mid}m{\in}\mathbb{N})$ for s > 2 or a copy of $1_s(l^m_1{\mid}{\in}\mathbb{N})$, for any $l{\leq}S$ < ${\infty}$. Also ${\Delta}_{s_1,{\ldots},s_n}(c_0,{\ldots},c_0;c_0)$ contains a copy of $l_{{\upsilon}_n(s_1,{\ldots},s_n)}$ if ${\upsilon}_n(s_1,{\ldots},s_n){\leq}2$ or a copy of $l_{{\upsilon}_n(s_1,{\ldots},s_n)}(l^m_2{\mid}m{\in}\mathbb{N})$ if 2 < ${\upsilon}_n(s_1,{\ldots},s_n)$, where ${\frac{1}{{\upsilon}_n(s_1,{\ldots},s_n})}={\frac{1}{s_1}}+{\cdots}+{\frac{1}{s_n}}$. We find also the necessary and sufficient conditions for bilinear operators induced by some method of summability to be 1-summing or 2-dominated.

• 대한수학회지
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• 제41권5호
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• pp.773-793
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• 2004

We consider a system of particles with locations { $X_{i}$ $^{n}$ (t):t$\geq$0,i＝1,…,n} in $R^{d}$ , time-varying weights { $A_{i}$ $^{n}$ (t) : t $\geq$0,i ＝ 1,…,n} and weighted empirical measure processes $V^{n}$ (t)＝1/n$\Sigma$$_{i=1}$$^{n}$ $A_{i}$ $^{n}$ (t)$\delta$ $X_{i}$ $^{n}$ (t), where $\delta$$_{x}$ is the Dirac measure. It is known that there exists the limit of { $V_{n}$ } in the week* topology on M( $R^{d}$ ) under suitable conditions. If { $X_{i}$ $^{n}$ , $A_{i}$ $^{n}$ , $V^{n}$ } satisfies some diffusion equations, applying Ito formula, we prove a central limit type theorem for the empirical process { $V^{n}$ }, i.e., we consider the convergence of the processes η$_{t}$ $^{n}$ ≡ n( $V^{n}$ -V). Besides, we study a characterization of its limit.t.

• 한국표면공학회지
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• 제43권6호
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• pp.266-271
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• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• 대한수학회보
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• 제52권5호
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• pp.1467-1480
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• 2015

Generalized Fibonacci and Lucas sequences ($U_n$) and ($V_n$) are defined by the recurrence relations $U_{n+1}=PU_n+QU_{n-1}$ and $V_{n+1}=PV_n+QV_{n-1}$, $n{\geq}1$, with initial conditions $U_0=0$, $U_1=1$ and $V_0=2$, $V_1=P$. This paper deals with Fibonacci and Lucas numbers of the form $U_n$(P, Q) and $V_n$(P, Q) with the special consideration that $P{\geq}3$ is odd and Q = -1. Under these consideration, we solve the equations $V_n=5kx^2$, $V_n=7kx^2$, $V_n=5kx^2{\pm}1$, and $V_n=7kx^2{\pm}1$ when $k{\mid}P$ with k > 1. Moreover, we solve the equations $V_n=5x^2{\pm}1$ and $V_n=7x^2{\pm}1$.

• 대한수학회보
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• 제51권4호
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• pp.923-931
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• 2014

Let x be an element of a group G and be an automorphism of G. Then for a positive integer n, the autocommutator $[x,_n{\alpha}]$ is defined inductively by $[x,{\alpha}]=x^{-1}x^{\alpha}=x^{-1}{\alpha}(x)$ and $[x,_{n+1}{\alpha}]=[[x,_n{\alpha}],{\alpha}]$. We call the group G to be n-auto-Engel if $[x,_n{\alpha}]=[{\alpha},_nx]=1$ for all $x{\in}G$ and every ${\alpha}{\in}Aut(G)$, where $[{\alpha},x]=[x,{\alpha}]^{-1}$. Also, for any integer $n{\neq}0$, 1, a group G is called an n-auto-Bell group when $[x^n,{\alpha}]=[x,{\alpha}^n]$ for every $x{\in}G$ and each ${\alpha}{\in}Aut(G)$. In this paper, we investigate the properties of such groups and show that if G is an n-auto-Bell group, then the factor group $G/L_3(G)$ has finite exponent dividing 2n(n-1), where $L_3(G)$ is the third term of the upper autocentral series of G. Also, we give some examples and results about n-auto-Bell abelian groups.

• 대한수학회지
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• 제50권2호
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• pp.307-330
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• 2013

If $m$ and $n$ are non-negative integers, then three new classes of abelian $p$-groups are defined and studied: the $m$, $n$-simply presented groups, the $m$, $n$-balanced projective groups and the $m$, $n$-totally projective groups. These notions combine and generalize both the theories of simply presented groups and $p^{w+n}$-projective groups. If $m$, $n=0$, these all agree with the class of totally projective groups, but when $m+n{\geq}1$, they also include the $p^{w+m+n}$-projective groups. These classes are related to the (strongly) n-simply presented and (strongly) $n$-balanced projective groups considered in [15] and the n-summable groups considered in [2]. The groups in these classes whose lengths are less than ${\omega}^2$ are characterized, and if in addition we have $n=0$, they are determined by isometries of their $p^m$-socles.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.233-236
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• 2012

본 논문에서는 차단층 설계 변수에 따른 GaN 기반 LED의 출력 특성을 분석하였다. 사용된 LED의 기본 구조는 GaN 버퍼층을 기반으로 GaN 장벽과 InGaN 양자 우물로 이루어진 활성 영역이 AlGaN EBL(Electron Blocking Layer)과 AlGaN HBL(Hole Blocking Layer) 사이에 구성되어 있다. ISE-TCAD를 이용하여 GaN 기반 LED에서 EBL의 Al 몰분율과 두께, HBL의 Al 몰분율과 도핑 농도에 따른 출력 전력과 내부 양자 효율 특성을 분석하였다.