• Title/Summary/Keyword: N and P

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(p)ZnTe/(n)Si 태양전지와 (n)CdS-(p)ZnTe/(n)Si 복접합 박막의 광도전 특성에 관한 연구 (A Study on the Photo-Conductive Characteristics of (p)ZnTe/(n)Si Solar Cell and (n)CdS-(p)ZnTe/(n)Si Poly-Junction Thin Film)

  • 전춘생;김완태;허창수
    • 태양에너지
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    • 제11권3호
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    • pp.74-83
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    • 1991
  • 본 논문은 substrate의 온도를 $200{\pm}1^{\circ}C$ 정도로 유지하며 진공저항 가열 증착법을 이용하여 (p)ZnTe/(n)Si 태양전지와 (n)CdS-(p)ZnTe/(n)Si 복접합 박막을 제작한 후 그 전기적 특성을 조사, 비교하였다. 제작한 (p)ZnTe/(n)Si 태양전지와(n)CdS-(p)ZnTe/(n)Si 복접합 박막에 대하여 $100[mW/cm^2]$의 광조사 하에서 특성을 조사한바 다음과 같은 결과를 얻었다. 단략전류$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 개방전압[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 충실도, FF (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 변환효율[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 제작된 박막은 열처리에 의해 성능이 향상되지만 (p)ZnTe/(n)Si 태양전지는 약 $470^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서 그리고 (n)CdS-(p)ZnTe/(n)Si 복접합 박막은 약 $580^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서는 박막의 각종 구조결함으로 인한 감소현상을 나타내었다. 열처리 온도의 증가에 따라 박막의 표면저항은 감소하였다.

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N-Arylsulfonylbenzimidothiophenyl Ester 유도체의 가수분해에 대한 반응속도론적 연구 (Kinetics and Mechanism of the Hydrolysis of N-Arylsulfonylbenzimidothiophenyl ester)

  • 허태성;김태린
    • 대한화학회지
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    • 제20권1호
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    • pp.73-86
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    • 1976
  • 다음과 같은 새로운 4종의 N-(arylsulfonyl)benzamide 유도체와 6종의 N-(arylsulfonyl)benzimidothiophenyl ester 유도체를 합성하였다. m-methyl-N-(arylsulfonyl)benzamide, p-methyl-N-(arylsulfonyl)benzamide, m-nitro-N-(arylsulfonyl)benzamide, p-methoxy-N-(arylsulfonyl)benzamide, p-methyl-N-(arylsulfonyl)benzimidothiophenyl esters, m-methyl-N-(arylsulfonyl)benzimidothiophenyl ester, p-methoxy-N-(arylsulfonyl)benzimidothiophenyl ester, p-nitro-N-(arylsulfonyl)benzimidothiophenyl ester, m-nitro-N-(arylsulfonyl)benzimidothiophenyl ester, p-chloro-N-(arylsulfonyl)benzimidothiophenyl ester. 넓은 pH 범위에서 N-(arylsulfonyl)benzimidothiophenyl esters 유도체의 가수분해속도 상수를 자외선 분광광도법으로 측정하여 넓은 pH 범위에 적용되는 반응속도식을 구하였다. 이 속도식과 치환기효과등으로부터 N-arylsulfonylbenzimidothiophenyl esters 유도체에 대한 가수분해 반응메카니즘을 제안하였다. 즉 pH 11 이상에서는 hydroxide ion이 pH 9 이하에서는 azomethine 기에 물분자가 첨가되므로서 반응이 시작되며 pH 9∼11 사이에서는 물분자와 hydroxide ion이 경쟁적으로 반응함을 알았다.

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Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

  • Narang, Rakhi;Saxena, Manoj;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권3호
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    • pp.224-236
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    • 2013
  • This work presents a comparative study of four Double Gate tunnel FET (DG-TFET) architectures: conventional p-i-n DG-TFET, p-n-p-n DG-TFET, a gate dielectric engineered Heterogate (HG) p-i-n DG-TFET and a new device architecture with the merits of both Hetero Gate and p-n-p-n, i.e. HG p-n-p-n DG-TFET. It has been shown that, the problem of high gate capacitance along with low ON current for a p-i-n TFET, which severely hampers the circuit performance of TFET can be overcome by using a p-n-p-n TFET with a dielectric engineered Hetero-gate architecture (i.e. HG p-n-p-n). P-n-p-n architecture improves the ON current and the heterogeneous dielectric helps in reducing the gate capacitance and suppressing the ambipolar behavior. Moreover, the HG architecture does not degrade the output characteristics, unlike the gate drain underlap architecture, and effectively reduces the gate capacitance.

O, O'-Diethyl DL-1-Aminobenzylphosphonate와 그의 유도체들을 포함한 p-Acetamidobenzenesulfonamide의 합성 (Synthesis of p-Acetamidobenzenesulfonamide Containing O, O'-Diethyl DL-1-Aminobenzylphosphonate and Their Derivatives)

  • 김영석;홍석인;김용준
    • 대한화학회지
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    • 제27권4호
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    • pp.294-301
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    • 1983
  • 새로운 O, O'-diethyl-1-aminobenzylphosphonate와 그의 유도체들을 포함한 다음의 6가지의 p-acetamidobenzenesulfonamide를 합성하였다. O, O'-diethyl N-(p-acetamidobenzenesulfonyl) aminobenzylphosphonate, N-(p-acetamidobenzenesulfonyl) aminobenzylphosphonic acid, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl) glycyl] aminobenzylphosphonate, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-DL-alanyl] aminobenzylphosphonate, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-L-leucyl] aminobenzylphosphonate, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-L-phenylalanyl]aminobenzylphosphonate. 모든 화합물은 흰색 결정으로 얻었으며 적외선 분광법과 원소분석으로 확인되었다.

티안트렌 양이온 자유라디칼 과염소산염과 N-아릴벤젠술폰아미드 및 N-아릴-p-톨루엔술폰아미드의 반응. 5-(p-N-아릴술폰아미드페닐)티안트렌이움 과염소산염과 5-(p-N-아릴-p-톨루엔술폰아미드페닐)티안트렌이움 과염소산염의 합성 (Reactions of Thianthrene Cation Radical Perchlorate with N-Arylbenzene- and N-Aryl-p-toluenesulfonamides. Synthesis of 5-(p-N-Arylbenzenesulfonamidephenyl)- and 5-(p-N-Aryl-p-toluenesulfonamidophenyl)thianthrenium Perchlorate)

  • 김성훈;김경태
    • 대한화학회지
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    • 제25권6호
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    • pp.383-389
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    • 1981
  • 티안트렌 양이온 자유라디칼 과염소산염은 p-톨루엔술포아니리드, 벤젠술폰아니리드, N-(2-메틸페닐)벤젠술폰아미드, N-페닐-p-톨루엔술폰아닐리드와 같은 N-아릴술폰아미드와 반응하여 각각 5-(p-N-p-톨루엔술폰아미도페닐)티안트렌이움 과염소산염(1a), 5-(p-N-벤젠술폰아미도페닐)티안트렌이움 과연소산염(1b), 5-(4-N-벤젠술폰아미도-3-메틸페닐)티안트렌이움 과염소산염(1c), 5-(p-N-페닐-N-p-톨루엔술폰아미도페닐)티안트렌이움 과염소산염(1d)을 준다. 한편 1d는 티안트렌 양이온 자유라디칼과 다시 반응하여 이과염소산염(1e)을 생성한다. 1a∼1e의 구조는 아세트아니리드와의 반응생성물인 5-(p-아세트아미도페닐)티안트렌이움 과염소산염과 매우 비슷하다. 그러나 두 반응의 양 관계에서 상이한 점은 술폰아미드와의 반응이 단일 메카니즘으로 진행되지 않음을 암시한다.

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InGaP/InAlGaP 이종 접합구조 태양전지 시뮬레이션 연구 (Simulation Study on Heterojunction InGaP/InAlGaP Solar Cell)

  • 김정환
    • 한국진공학회지
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    • 제22권3호
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    • pp.162-167
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    • 2013
  • 이종 p-InGaP/N-InAlGaP 접합 화합물 반도체 태양전지의 에피 구조를 제안하였다. 제안된 이종접합구조와 p-InGaP/p-GaAs/N-InAlGaP와 동종 p-InGaP/n-InGaP 접합구조 태양전지의 전류-전압 특성곡선을 시뮬레이션하고 결과를 비교분석하였다. 이종 p-InGaP/N-InAlGaP 접합구조에서 가장 높은 최대출력과 곡선인자(fill factor)를 나타내는 시뮬레이션 결과를 얻었으며 이를 바탕으로 제안된 이종접합 에피구조를 최적화하였다.

Bioreduction of N,N-dimethyl-p-nitrosoaniline

  • Kim, Kyung-Soon;Shin, Hae-Yong
    • BMB Reports
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    • 제34권3호
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    • pp.225-229
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    • 2001
  • Besides a variety of quinones, purified bovine liver quinone reductase catalyzed the reduction of N,N-p-nitrosoaniline to N,N-dimethyl-p-phenylenediamine. The formation of N,N-dimethyl-p-phenylenediamine was identified by TLC, GC, GC-MS and NMR. Quinone reductase can utilize either NADH or NADPH as a source of reducing equivalents. The apparent Km for 1,4-benzoquinone and N,N-dimethyl-p-nitrosoaniline was 1.64 mM and 0.22 mM, respectively The reduction of N,N-dimethyl-p-nitrosoaniline was almost entirely hampered by dicumarol or Cibacron blue 3GA, potent inhibitors of mammalian quinone reductase. During the bovine liver quinone reductase-catalyzed reduction of N,N-dimethyl-p-nitrosoaniline, benzoquinonediiminium ion was produced.

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Nutrients and Phytoplankton Blooms in the Southern Coastal Waters of Korea: I. The Elemental Composition of C, N, and P in Particulate Matter in the Coastal Bay Systems

  • Kang, Chang-Keun;Kim, Pyoung-Joong;Lee, Won-Chan;Lee, Pil-Yong
    • Journal of the korean society of oceanography
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    • 제34권2호
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    • pp.86-94
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    • 1999
  • An investigation was conducted to determine limiting nutrients in the bay systems of the southern coastal area of Korea. The elemental composition of C, N, and P in suspended particulate matter was monitored nearly monthly in Chinhae and Koje Bays and seasonally in Deukryang Bay for 2 years. Atomic C:N ratio in particulate matter ranges from 4.3 to 9.6, typical of marine phytoplankton. C:P and N:P ratios vary from the Redfield ratio to 229 (C:P) and 37 (N:P). A constant C:N ratio of 6.87 from regression of particulate C and N concentrations demonstrates that the particulate matter in the systems originates from primary production. C:P and N:P ratios from regression of C on P and N on P are well associated with changes in salinity. The low N:P ratio of 13.1 implies N limitation in the environments of the systems. This seems to result from the low N:P ratio of nutrients released across sediment-water interface. Phytoplankton response, expressed here as the increase of chlorophyll a, to N addition also verifies N limitation for phytoplankton communities. In heavy rainfall season (from June to September), the addition of excessive N via streams into the stratified coastal water proliferates phytoplankton greatly. During the phytoplankton blooms, C:P and N:P ratios are much higher than the Redfield ratio, implying P limitation. This results from the high N:P ratio in nutrients supplied from stream waters. Strong stratification during the blooms also interrupts the supply of nutrients, particularly p, from bottom waters. Dependent upon precipitation, this tendency shows great inter-annual variation.

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n-ZnO/p-Zn doped InP의 p-n 이종접합 형성에 관한 연구 (p-n heterojunction composed of n-ZnO/p-Zn-doped InP)

  • 심은섭;강홍성;강정석;방성식;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.126-129
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    • 2001
  • A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

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n-ZnO/p-Zn doped InP의 p-n 이종접합 형성에 관한 연구 (p-n heterojunction composed of n-ZnO/p-Zn-doped InP)

  • 심은섭;강홍성;강정석;방성식;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.126-129
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    • 2001
  • A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

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