• Journal of Powder Materials
• /
• v.28 no.2
• /
• pp.143-149
• /
• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1208-1211
• /
• 2003

High quality $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin films fabricated by using the evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ phases with $T_{sub}$ and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

• Communications of the Korean Mathematical Society
• /
• v.25 no.1
• /
• pp.51-57
• /
• 2010

In this paper we introduce and study the lacunary strong Zweier sequence spaces $N_{\theta}^O[Z]$, $N_{\theta}[Z]$ consisting of all sequences x = $(x_k)$ such that (Zx) in the space $N_{\theta}$ and $N_{\theta}^O$ respectively, which is normed. Also, prove that $N_{\theta}^O[Z}$, $N_{\theta}[Z}$, are linearly isomorphic to the space $N_{\theta}^O$ and $N_{\theta}$, respectively. And we study some connections between lacunary strong Zweier sequence and lacunary statistical Zweier convergence sequence.

• Bulletin of the Korean Chemical Society
• /
• v.13 no.2
• /
• pp.127-131
• /
• 1992

Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.

• Journal of the Korean Chemical Society
• /
• v.39 no.6
• /
• pp.434-439
• /
• 1995

Six-coordinate molybdenum(Ⅴ)-oxo complexes, (R4N)[MoO(NCS)2L](R=CH3, C2H5, n-C4, H9) with S-methyl-3-(2-hydroxy-x-phenyl)methylenedithiocarbazate(L1: x=5-H) and its derivatives (L2:x=5-CH3, L3: x=3-CH3O, L4: x=5,6-C4H4 and L5: x=5-NO2) have been synthesized and the structural, spectral and electrochemical properties of the complexes have been characterized by elemental analysis, molar conductivity, UV-Vis, IR, 1H NMR, and CV (cyclic voltammetry).

• KIPS Transactions on Computer and Communication Systems
• /
• v.4 no.7
• /
• pp.213-218
• /
• 2015

Given two strings X and Y (|X|=m, |Y|=n) over an alphabet ${\Sigma}$, the extended edit distance between X and Y can be computed using dynamic programming in O(mn) time and space. Recently, a parallel algorithm that takes O(m+n) time and O(mn) space using m threads to compute the extended edit distance between X and Y was presented. In this paper, we present an improved parallel algorithm using the shared memory on GPU. The experimental results show that our parallel algorithm runs about 19~25 times faster than the previous parallel algorithm.

• Current Photovoltaic Research
• /
• v.11 no.4
• /
• pp.103-107
• /
• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Korean Journal of Materials Research
• /
• v.30 no.5
• /
• pp.262-266
• /
• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.271-274
• /
• 1998

Metallic ferromagnet LA$_{1-x}$ Sr$_{x}$MnO$_3$ has received considerable attentions because of its metallic conductivity and giant magnetic resistivity. It is generally believed that layered perovskite SrO(LA$_{1-x}$ Sr$_{x}$MnO$_3$)$_{n}$ phase is insulating and shows no metallic transition. But recent report revealed that some single crystal SrO(LA$_{1-x}$ Sr$_{x}$MnO$_3$)$_{n}$ phase showed MR effect. In this study, layered perovskite SrO(LA$_{1-x}$ Sr$_{x}$MnO$_3$)$_2$ Phases were synthesized by solid state reaction at 140$0^{\circ}C$ in air atmosphere, for wide range of x and their phases were confirmed by X-ray diffraction. Electrical and magnetic properties were measured down to 10K and the possibility of MR effects was investigated.as investigated.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.06a
• /
• pp.524-527
• /
• 2007

[ $Bi_2Sr_2Ca_{n-1}Cu_nO_x$ ](n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about % K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $ CaCuO_2$ was observed in all of the obtained films.