• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.54-57
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• 2003

[ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.34-37
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• 2003

[ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.387-390
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• 1999

To improve the cycle performance LiM $n_2$ $O_4$as the cathode of 4V class lithium secondary batteries, the cathode properties of the cubic spinel phases LiM $g_{x}$ /M $n_{2-x}$/ $O_4$ synthesized at 80$0^{\circ}C$ were examined. All cathode material showed spinel phase based on cubic phase in X-ray diffraction however. other peaks gradually exhibited and became intense with the increase of x value in LiM $g_{x}$ /M $n_{2-x}$/ $O_4$. The cycle performance of the LiM $g_{x}$ /M $n_{2-x}$/ $O_4$was improved by the substitution of $Mg^{2+}$ for M $n^{3+}$ in the octahedral sites. Specially LiM $g_{0.1}$/M $n_{1.9}$ / $O_4$cathode materials showed the charge and discharge capacity of about 130~125mAh/g at first cycle and about 105mAh/g after 50th cycle. It is excellent than that of pure LiM $n_{2}$/ $O_4$ which 125mAh/g at first cycle 70mAh/g at 50th. In addition cathode material prepared at 80$0^{\circ}C$ for 24hr and 42hr in the charge and discharge capapcity as well as the cycle stability.ility.y.y.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.251-256
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• 2012

Etherification of n-butanol to di-n-Butyl Ether was carried out over Keggin $H_{3+x}PW_{12-x}Nb_xO_{40}$ (x=0, 1, 2, 3) and $H_{6+x}P_2W_{18-x}Nb_xO_{62}$ (x=0, 1, 2, 3) Wells-Dawson heteropolyacid catalysts. Niobium-substituted Keggin and Wells-Dawson heteropolyacid catalysts with different niobium content were prepared. Successful preparation of the catalysts was confirmed by FT-IR, ICP-AES, and $^{31}P$ NMR analyses. Their acid properties were determined by $NH_3$-TPD (Temperature-Programmed Desorption) measurements. Heteropolyacid catalysts showed different acid properties depending on niobium content in both series. The correlation between acid properties of heteropolyacid catalysts and catalytic activity was then established. Acidity of Keggin and Wells-Dawson heteropolyacid catalysts decreased with increasing niobium content, and conversion of n-butanol and yield for di-n-butyl ether increased with increasing acidity of the catalysts, regardless of the identity of heteropolyacid catalysts (without heteropolyacid structural sensitivity). Thus, acidity of heteropolyacid catalysts served as an important factor determining the catalytic performance in the etherification of n-butanol to di-n-Butyl Ether.

• Journal of Korean Society for Atmospheric Environment
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• v.33 no.6
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• pp.605-615
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• 2017

Efficient simultaneous reduction conditions for $NO_x$ and $NH_3$-slip was investigated in SCR (Selective Catalytic Reduction) process with load variation by applying dual catalysts (SCR catalyst, $NH_3$ decomposition catalyst) system. $N_2O$ formation characteristics were analyzed to look into possible undesirable reaction pathways. In the experiments of catalyst characteristics, various operational variables were tested for the combined catalytic system, such as $NH_3/NO_x$ ratio, temperature, oxygen concentration and $H_2O$. The reaction characteristics of $NO_x$, $NH_3$ and $N_2O$ were analyzed and optimal conditions could be evaluated for the combustion facility with varied load. In terms of $NO_x/NH_3$ simultaneous reduction and $N_2O$ formation suppression, optimal condition was considered NSR 1.2 and temperature $300^{\circ}C$. At this operational condition, $NO_x$ conversion was 98%, $NH_3$ reduction efficiency was 95%, generated $N_2O$ concentration 9.5 ppm with inlet $NO_x$ concentration of 100 ppm. In $NH_3-SCR$ process with $NH_3$ decomposition catalyst, $NO_x$ and $NH_3$ can be considered to be reduced simultaneously at limited conditions. The results of this study may be utilized as basic data at facilities requiring simultaneous $NO_x$ and $NH_3$ reduction for facilities with load variation.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.962-967
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• 2000

산소 결핍 페라이트 (oxygen deficient ferrites, ODF) MF $e_2$ $O_{4-}$$\delta$/는 약 30$0^{\circ}C$의 낮은 온도에서 온실가스중 하나인 $CO_2$를 C와 $O_2$로 분해시킨다. 본 연구에서는 $CO_2$분해 촉매로서 3원계 초미세 페라이트 N $i_{x}$Z $n_{1-x}$F $e_2$ $O_4$와 N $i_{x}$ $Co_{1-x}$F $e_2$ $O_4$를 수열합성법과 공침법 등의 습식 합성법으로 각각 합성하여 이들 분말의 특성과 $CO_2$분해 특성을 고찰하였다. 페라이트의 XRD 결과, 결정구조는 모두 전형적인 스피넬 구조로 동일하게 나타났다. BET 비표면적은 수열합성법으로 제조한 3원계 페라이트의 경우 110$m^2$/g 이상으로 공침법으로 제조한 페라이트보다 비교적 큰 값을 나타냈고 분말 입자크기 또한 약 10nm의 매우 미세한 분말을 얻을 수 있었다. 3원계 산소 결핍 페라이트의 $CO_2$분해 효율은 공침법으로 합성한 것보다 수열합성법으로 합성한 것이 더 우수하게 나타났으며, N $i_{x}$ $Co_{1-x}$F $e_2$ $O_{4-}$$\delta$/보다 N $i_{x}$Z $n_{1-x}$F $e_2$ $O_{4-}$$\delta$/가 우수한 것으로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.331-334
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• 2001

In this study, the magnetic properties for Ni-Zn ferrite were investigated as the function of $Co_3$ $O_4$ additive contents which was predicted to improve the resonance frequency. Toroid specimens with the composition of N $i_{0.8-x}$Z $n_{0.2+x}$F $e_2$ $O_4$(x = 0, 0.05, 0.1, 0.15) ferrites were preparation by conventional ceramic processing technique. The maximum resonance frequency of 19.905 MHz and the permeability of 90.88 in 10 MHz were attained to the N $i_{0.8}$Z $n_{0.2}$F $e_2$ $O_4$with $Co_3$ $O_4$0.3 wt%. Both of the permeability in 10 MHz and the resonance increased to 107.11 and 19.005 MHz respectively for the N $i_{0.8}$Z $n_{0.2}$F $e_2$ $O_4$with $Co_3$ $O_4$wt% than the N $i_{0.8}$Z $n_{0.2}$F $e_2$ $O_4$/ with the free $Co_3$ $O_4$composition.composition.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.19-24
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• 2009

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.31-33
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• 1992

This paper is studies the addition effects of $La_2O_3$ on the magnetic properties of Sr ferrite. Compositions were chosen according to the formula $[SrO{\cdot}nFe_2O_3]_{100-x}(La_2O_3)_x$. where n was varied between 5.8~6.1 and x between 0~3. The composition of the best value $(BH)_{max}$=1.48MGOe was n=6(stoichiometric composition) and x=2 at $La_2O_3$ addition. This value was higher than that of ordinary isotropic strontium ferrite.

• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.585-590
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• 1998

Fibrous $Na_xTi_nO_{2n+1}$ whisker was prepared by $H^+/Na^+$ ion-exchange on layered hydrous titanium dioxide ($H_2Ti_4O_9{\cdot}nH_2O$). The ion-exchange reaction was proceeded at 0.5~2.0 M NaOH solution. In the ion-exchange at 2.0 M NaOH solution, 73% of sodium was exchanged and the prepared $Na_xTi_nO_{2n+1}$ whisker was a fibrous crystal of about $10{\sim}20{\mu}m$ of length and about $0.7{\mu}m$ of diameter. The phase transition of the ion-exchange phases identified by the thermal analysis. The result showed that the $Na_xTi_nO_{2n+1}$ whisker was decomposed into $Na_2Ti_6O_{13}$ and $TiO_2$ in the temperature of $200{\sim}600^{\circ}C$.