• 한국자기학회지
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• 제23권6호
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• pp.179-183
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• 2013

최근에 발견된 $d^0$ 반쪽금속성을 가지는 호이슬러 화합물 $N_2KCa$와 $O_2KCa$이 합금을 이루었을 때 그 반쪽금속성과 자성을 제일원리 방법을 이용하여 연구하였다. 계산을 통해 얻은 상태밀도와 총 자기모멘트를 통해 고려의 대상인 $N_{1.5}O_{0.5}KCa$, NOKCa, $N_{0.5}O_{1.5}KCa$ 등 세 가지 화합물 모두 반쪽금속성 나타냄을 알 수 있었다. 이들 화합물에서 N 원자와 O 원자의 자기모멘트는 순수물질에 비해 상당히 증가하였으며, K 원자의 자기모멘트는 상당히 큰 음의 값을 가졌다. 각 원자들의 자기모멘트와 계산된 원자별 상태밀도를 연관시켜 자성과 반쪽금속성을 논의하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.444-447
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• 2000

The spinel L $i_{1-x}$ M $n_2$ $O_4$has been synthesized by the solid-state reaction. L $i_{l-x}$M $n_2$ $O_4$which includes a mixture of LiOH . $H_2O$ and Mn $O_2$prepared by preliminary heating at 35$0^{\circ}C$ for 12hr. L $i_{l-x}$M $n_2$ $O_4$fired at temperature range from 75$0^{\circ}C$ for 48hr. The structure and the electrochemical characteristics of spinel to L $i_{1-x}$ M $n_2$ $O_4$which is fabricated by changing sintering condition from starting materials are investigated. The cyclic voltammetric measurement was performed using 3 electrode cells. Electrode specific capacity and cycle life behavior were tested in a 3.0~4.2V range at a constant current density of 0.45mA/c $m^2$. To improve the cycle performance of spinel L $i_{l-x}$M $n_2$ $O_4$as the cathode of 4V class lithium secondary batteries, spinel phases L $i_{1-x}$ M $n_2$ $O_4$were Prepared at various lithium. The results showed that discharge capacity of L $i_{l-x}$M $n_2$ $O_4$varied at lithium quantity decrease with increasing lithium add quantity. The discharge capacities of L $i_{0.925}$M $n_2$ $O_4$and LiM $n_2$ $O_4$revealed 108 and 117mAh/g, respectively.spectively.y.

• 한국토양비료학회지
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• 제39권5호
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• pp.253-258
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• 2006

수원시에 위치한 농업과학기술원 시험포장인 고평통의 식양토와 본량통의 사양토에서 고추를 재배하였다. 식양토와 사양토의 2개 토성을 대상으로 토양 검정한 NPK 시비에 돈분퇴비 $25Mg\;ha^{-1}$를 각 각 시용하였다. 토양의 $N_2O$ 배출량 측정을 한 후 동시에 $N_2O$ 배출에 기여하는 토양수분, 무기태 질소, 지온 등을 측정하였고, 토양수분은 관수시점인 -50 kPa내의 범위로 한정하여 토양의 $N_2O$ 배출량을 실제 측정하였다. 온실가스 배출량을 예측하기 위해 영국의 경험 모델을 이용하여 $N_2O$ 배출의 예측값과 실측값을 비교 분석하였다. $N_2O$ 배출의 실측량과 무기태 질소($NO_3{^-}+NH_4{^+}$)의 관계에서 무기태 질소($NO_3{^-}-N+NH_4{^+}-N$)가 $10mg\;kg^{-1}$ 이하에서 $N_2O$ 배출량이 $1{\sim}10g\;N_2O-N\;ha^{-1}day^{-1}$로 나타나 $N_2O$ 배출에 대한 무기태질소 ($NO_3{^-}-N+NH_4{^+}-N$)의 한계선을 구분할 수 있었으며, 실측값인 토양온도와 WFPS(water filled pore space) 관계에서도 경험 모델의 배출 추정식인 (% WFPS)+{$2{\times}$토양온도($^{\circ}C$)}=90, (% WFPS)+{$2{\times}$토양온도($^{\circ}C$)}=105를 증명 하였다. $N_2O$ 배출의 실측량과 예측량을 1:1 대응한 결과, 식양토와 사양토 각 r=0.962, r=0.974로 나타났다. 고추밭의 $N_2O$ 배출량을 분석한 결과, 예측량과 작기 기간 전체 $N_2O$ 배출량의 비교에서 예측량은 식양토에서 12.2%가 낮게 평가 되었고, 사양토에서는 30%가 높게 평가 되었다. 그리고 토양 파라메타 분석 동시에 1주일에 1회 $N_2O$가스를 포집한 $N_2O$ 배출량에서는 식양토 27.1, 사양토 14.7%가 높게 평가 되었다. 향후 경험 모델의 정밀도를 높이기 위해서는 국내 작물재배환경에 맞는 파라메타의 수정이 필요하며 다양한 작물을 대상으로 연구가 있어야 할 것으로 생각한다.

• 한국환경과학회지
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• 제22권1호
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• pp.73-81
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• 2013

The present work has been devoted to the catalytic reduction of $N_2O$ by $H_2$ with $Pt/SiO_2$ catalysts at very low temperatures, such as $110^{\circ}C$, and their nanoparticle sizes have been determined by using $H_2-N_2O$ titration, X-ray diffraction(XRD) and high-resolution transmission electron microscopy(HRTEM) measurements. A sample of 1.72% $Pt/SiO_2$, which had been prepared by an ion exchange method, consisted of almost atomic levels of Pt nanoparticles with 1.16 nm that are very consistent with the HRTEM measurements, while a $Pt/SiO_2$ catalyst possessing the same Pt amount via an incipient wetness technique did 13.5 nm particles as determined by the XRD measurements. These two catalysts showed a noticeable difference in the on-stream $deN_2O$ activity maintenance profiles at $110^{\circ}C$. This discrepancy was associated with the nanoparticle sizes, i.e., the $Pt/SiO_2$ catalyst with the smaller particle size was much more active for the $N_2O$ reduction. When repeated measurements of the $N_2O$ reduction with the 1.16 nm Pt catalyst at $110^{\circ}C$ were allowed, the catalyst deactivation occurred, depending somewhat on regeneration excursions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.90-93
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• 1992

In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2006년도 가을 학술발표논문집 Vol.33 No.2 (A)
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• pp.511-515
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• 2006

집합이나 배열의 원소, 트리의 노드, 그래프의 정점과 간선 등과 같은 이산 객체는 일반적으로 주기억장치의 논리적 주소 값과 같은 정수로 표현되어 왔다. Succinct 표현은 이와 같은 n개의 이산 객체를 O(n) 비트에 표현하는 방법이다. 대부분의 succinct 표현은 rank와 select라는 함수를 기본적으로 사용하며, 다양한 연구들에 의해 현재 rank와 select 함수는 o(n)?? 비트만을 사용하여 ??O(1) 시간에 수행될 뿐만 아니라, 실제로도 실용적으로 구현되었다. 본 논문에서는 $n{\times}n$ 배열, 즉 2차원 비트 스트링에 대한 Rank 및 Select 함수를 새롭게 정의한다. 또한, $O(n^2log\;n)$ 비트를 사용하여 O(1) 시간에 Rank 질의를 수행하고 O(log n) 시간에 Select 질의를 수행하는 방법과, 보다 적은 $O(n^2)$ 비트를 사용하면서 O(log n) 시간에 Rank 질의를 수행하고 $O(log^2\;n)$ 시간에 Select 질의를 수행하는 방법을 제안한다. 본 논문에서 정의하는 2차원 배열 상의 Rank와 Select 함수는 이미 개발된 2차원 상의 써픽스 트리 등을 기반으로 향후 개발될 2차원 상의 압축된 인덱스 자료구조나 이미지 프로세싱 등에 유용하게 사용된다.

• 한국토양비료학회지
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• 제49권6호
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• pp.720-730
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• 2016

Greenhouse-gas emission factors are widely used to estimate emissions arising from a defined unit of a specific activity. Such estimates are used both for international reporting to the United Nations Framework Convention on Climate Change (UNFCCC) and for myriad national and sub-national reporting purposes (for example, European Union Emissions Trading Scheme; EU ETS). As with the other so-called 'Kyoto protocol GHGs', the Intergovernmental Panel on Climate Change (IPCC) provides a methodology for national and sub-national estimation of $N_2O$ emissions, based on the sector from which the emissions arise. The objective of this study was to develop a integrated emission factor to estimate the direct $N_2O$ emission from an agricultural field cultivated with the red pepper, soy bean, spring cabbage, autumn cabbage and potato in 2010~2012. Emission factor of $N_2O$ calculated using accumulated $N_2O$ emission, N fertilization rate, and background $N_2O$ emission over three year experiment was $0.00596{\pm}0.001337kg$ $N_2O-N(N\;kg)^{-1}$. More extensive studies need to be conducted to develop $N_2O$ emission factors for other upland crops in the various regions of Korea because $N_2O$ emission is influenced by many factors including climate characteristics, soil properties, and agricultural practices.

• 한국세라믹학회지
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• 제28권1호
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• pp.53-59
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• 1991

The reaction product between Si3N4 and ZrO2 has been studied by heat treatment of Si3N4-Zr(Y)O2 composite in high vacuum(<10-5 torr) and in air at $700^{\circ}C$. ZrN was formed after heat treatment in vacuum and easily oxidized after heat treatment in air. The amount of ZrN is related to the Y2O3 content dissolved in ZrO2. After the heat treatment in air the toughness increased and the spalling due to the oxidation of ZrN in specimen surface was observed. As a result, it is suggested that the formation of ZrN phase in Si3N4-ZrO2 composite enhance the toughness of the composite in an oxidation conditon.

• 한국표면공학회지
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• 제37권6호
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• pp.307-312
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• 2004

Extensive efforts have been made in an attempt to utilize photocatalytic properties of $TiO_2$ in visible range. $TiO_2$ and TiO-N thin films were made by the DC reactive magnetron sputtering method at $300^{\circ}C$. Various gases (Ar, $O_2$ and $N_2$) were used and Ti target was impressed by 0.6 kW-5.8 kW power range. The hysteresis phenomenon of the $TiO_2$ thin film as a function of the discharge voltage characteristic was observed to be higher as applied power increases. That of TiO-N thin film was occurred at the 5.8 kW power. The cross section and surface roughness of thin films were observed by FE-SEM and AFM. Average surface roughness of TiO-N thin film was observed as $15.9\AA$ and that of $TiO_2$ as $13.2\AA$. The crystal phases of both $TiO_2$ and TiO-N thin films were found to be anatase structure. The atomic $\beta$-N (396 eV peak in N 1s XPS) was shown in the rutile crystal of TiO-N and was considered acting as the origin of wavelength shift to the visible light.

• 전자공학회논문지A
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• 제31A권6호
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• pp.117-127
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• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.