• Title/Summary/Keyword: Multilayered films

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Ellipsometric Expressions for Two Uniaxially Anisotropic Layers Coated on a Multilayered Substrate (두개의 단축이방성 박막이 있는 다층박막 시료의 타원식)

  • Kim, Sang Youl
    • Korean Journal of Optics and Photonics
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    • v.26 no.2
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    • pp.115-120
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    • 2015
  • Explicit expressions are derived for the effective reflection coefficients of obliquely incident light on a multilayered substrate coated with two uniaxially anisotropic films. Based on these reflection coefficients, ellipsometric constants are obtained as function of the tilt and azimuthal angles of the optical axes of the uniaxial films. Explicit expressions are provided, which can be used to separate the effects of surface anisotropy for anisotropic film from that of its bulk anisotropy, so that these expressions may be utilized in characterizing the surface anisotropy of alignment layers.

Electric Field Strength and Compressive Stress Effects on the Displacement of Multilayered Ceramic Actuators (적층형 세라믹 압전 액추에이터의 전계강도와 압축응력에 따른 변위특성 해석)

  • Song, Jae-Sung;Jeong, Soon-Jong;Kim, In-Sung;Min, Bok-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.248-252
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    • 2005
  • The effects of electric field strength and mechanical compressive stress on the displacement of multilayered ceramic actuator, stacked alternatively 0.2 (PbM $n_{1}$3/N $b_{2}$3/ $O_3$)-0.8(PbZ $r_{0.475}$ $Ti_{0.525}$ $O_3$) ceramic thin films and 70Ag-30Pd electrodes were investigated. Because the actuators were designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. so the polarization and strain were affected by the amount of 180$^{\circ}$domain, electric field strength and mechanical compressive stress. Consequently, the change of polarization, displacement with respect to field strength, and mechanical compressive stress were likely to be caused by readiness of the domain wall movement around the ceramic-electrode interfaces.ces.

Nanostructure Fabrication using Dip-pen Nanolithography

  • Lee, Seung-Woo;Mirkin Chad A.
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.285-285
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    • 2006
  • The ionic layer-by-layer (LBL) assembled films can be formed by sequentially dipping of substrates to oppositely charged polyions solution in the multilayer, called polyelectrolytes multilayer (PEM) films. Easy way of these assemblies of charged polymers offer the ability to adjust important parameters such as controllability of thickness in the nanometer-scale level and functionality of most top layer of PEM films. Nevertheless, we do not know of any trials to fabricate PEM organic films into nanometer size. Herein, we show the integration of the LBL technique with DPN in fabricating nanometer size patterns of multilayered polyelectrolyte structures. Through the use of single and multiple cantilever AFM probes, we demonstrate the parallel writing capabilities of DPN.

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Effect of Seeding Layers on Preparation of PLZT Thin Films by Sol-Gel Method

  • Hirano, Tomio;Kawai, Hiroki;Suzuki, Hisao;Kaneko, Shoji;Wada, Tatsuya
    • The Korean Journal of Ceramics
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    • v.5 no.1
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    • pp.50-54
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    • 1999
  • $(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

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Properties of ITO/Cu/ITO Multilayer Films for Application as Low Resistance Transparent Electrodes

  • Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.165-168
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    • 2009
  • Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

The optoelectrical properties of ITO/Ni/ITO films prepared with a magnetron sputtering (Magnetron sputtering을 이용한 ITO/Ni/ITO 박막의 전기광학적 특성 연구)

  • Chae, Joo-Hyun;Park, Ji-Hye;Kim, Dea-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.276-276
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    • 2008
  • Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

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A Study on the Amorphization Reaction of the Co-Zr Multilayered Thin Film (Co-Zr 다층 박막의 저온 비정질화에 관한 연구)

  • 안지수;이병일;주승기
    • Journal of the Korean Magnetics Society
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    • v.6 no.3
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    • pp.170-173
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    • 1996
  • Co-Zr multilayered thin films were prepared by three-gun magnetron sputtering system and low temperature arrorphization was attempted. According to thin film X-ray and cross-sectional TEM analysis, it has been found that zirconium layer is arrorphized by diffusion of cobalt and the amorphization rate at the upper interface is two or three times faster than that at the lower interface of the zirconium layers. This new phenomenon is explained in terms of atomic mixing during sputtering.

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Electrical and structural properties of BNT/BT multilayered thick films (BNT/BT 다층 박막의 구조적, 전기적 특성)

  • Nam, Sung-Pill;Noh, Hyun-Ji;Lee, Sung-Gap;Bea, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1324_1325
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    • 2009
  • The heterolayered $BaTiO_3/(Bi_{0.5}Na_{0.5})TiO_3$ thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric properties in the heterolayered teteragonal/rhombohedral structure composed of the $BaTiO_3$ and the $(Bi_{0.5}Na_{0.5})TiO_3$ thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BNT/BT thick films. The structural and electrical properties of the heterolayered BNT/BT thick films were studied. All PZT heterolayered thin films show dense and homogeneous structure without the presence of the rosette structure. The dielectric constant, loss and remanent polarization oft heheterolayered BNT/BT thick films were superior to those of single composition $BaTiO_3$ and $(Bi_{1/2}Na_{1/2})TiO_3$, and those values for the heterolayered BNT/BT thick films sintered at $1100^{\circ}C$ were 916, 0.79 and $12.63{\mu}C/cm^2$.

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Fabrication of 3D Multilayered Microfluidic Channel Using Fluorinated Ethylene Propylene Nanoparticle Dispersion (불소화 에틸렌 프로필렌 나노 입자 분산액을 이용한 3차원 다층 미세유체 채널 제작)

  • Min, Kyoung-Ik
    • Korean Chemical Engineering Research
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    • v.59 no.4
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    • pp.639-643
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    • 2021
  • In this study, fluorinated ethylene propylene (FEP) nanoparticle as an adhesive for fabricating a three-dimensional multilayered microfluidic device was studied. The formation of evenly distributed FEP nanoparticles layer with 3 ㎛ in thickness on substrates was achieved by simple spin coating of FEP dispersion solution at 1500 rpm for 30 s. It is confirmed that FEP nanoparticles transformed into a hydrophobic thin film after thermal treatment at 300 ℃ for 1 hour, and fabricated polyimide film-based microfluidic device using FEP nanoparticle was endured pressure up to 2250 psi. Finally, a three-dimensional multilayered microfluidic device composed of 16 microreactors, which are difficult to fabricate with conventional photolithography, was successfully realized by simple one-step alignment of FEP coated nine polyimide films. The developed three-dimensional multilayered microfluidic device has the potential to be a powerful tool such as high-throughput screening, mass production, parallelization, and large-scale microfluidic integration for various applications in chemistry and biology.

Effect of SiO2/ITO Film on Energy Conversion Efficiency of Dye-sensitized Solar Cells

  • Woo, Jong-Su;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.6
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    • pp.303-307
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    • 2015
  • Multilayered films of ITO (In2O3:SnO2 = 9:1)/SiO2 were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO2 layer thickness. XRD results revealed that the ITO and TiO2 films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm2 (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO2 film showed a Voc of 0.697 V, Jsc of 10.596 mA/cm2 , FF of 66.423, and calculated power conversion efficiency (ηAM1.5) of 5.259%, which was the maximum value observed in this study.