• Journal of the Korea Society of Computer and Information
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• v.3 no.2
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• pp.169-175
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• 1998

There is a shared multibuffer method which can preventing HOL blocking in ATM switch. However, the system still has a problem that reduces the performance of the system because of the cell loss. Therefore, in this paper, preventing of cell loss in non-contentional shared multibuffer switch is suggested. To prevent cell loss, a structure is suggested that a cell can be loss in a certain slot time is stored in the dedicated temporary memory so the cell can be transferred in the next slot time. The simulation result of the structure, this suggested system superior performance than the exited system in cell loss rate and throughput.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.383-386
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• 2001

This paper presents a novel multicast architecture for shared multibuffer ATM switch, which is tailored for throughput enhancement in multicast environments. The address queues for multicast cells are separated from those for unicast cells to arbitrate multicast cells independently from unicast cells. Three read cycles are carried out during each cell slot and multicast cells have chances to be read from shared buffer memory(SBM) in the third read cycle provided that the shared memory is not accessed to read a unicast cell. In this architecture, maximum two cells are queued at each fabric output port per time slot and output mask choose only one cell. Extensive simulations are carried out and it shows that the proposed architecture has enhanced throughput comparing with other multicast schemes in shared multibuffer switch architecture.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.229-229
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• 2010

We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

• Journal of Internet Computing and Services
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• v.5 no.1
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• pp.41-49
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• 2004

Analytical performance evaluation is crucial for justifying the merit of the design of Multistage Interconnection Networks(MINs) in different operational conditions. While several analytical models have been proposed for the performance evaluation of MlNs, they are mainly for uniform traffics. Even the models for nonuniform traffics have various shortcomings. In this paper, an accurate model for the performance evaluation of multi buffered banyan-type MIN's under nonuniform traffic condition is obtained. The accuracy of proposed models are conformed by comparing with the results from simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.