• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.1-5
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• 2018

In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.308-314
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• 1999

We used the photoreflectance spectroscopy for characterization of the infrared photodetector structure we GaAs/$Al_{0.3}Ga_{0.7}As$ multi-quantum well (MQW) structures grown by molecular beam epitaxy (MBE) method. Energy gap related transitions in GaAS and AlGaAs were observed. The Al composition(x) was determined b Sek's composition formula. MQW related transition energies were identify the transitions, the experimentally observed energies were compare with results of the envelope function approximation for a rectangular quantum well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.52-54
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• 2008

The authors investigated the InGaN/GaN multi-quantum well blue light emitting diodes with the implements of the photonic crystals fabricated at the top surface of p-GaN layer or the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra for the blue light emitting diodes, which have a wavelength of 450nm. However, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 504 nm and played as a role of quality enhancement for the crystal growth of GaN thin film. The micro-Raman spectroscopy shows the improved epitaxial quality of GaN thin film.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.489-492
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• 2007

Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.145-145
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• 2015

처음 유기물의 인광 발견 이후 Host-dopant 시스템을 이용하여 Emission layer(EML)을 Co-deopsition 하는 방법으로 주로 인광 유기 발광 다이오드를 제작 하였다. [1] co-deposition을 이용해 만든 유기 발광 다이오드에 많은 장점이 있지만, 반대로 소자를 제작하는데 있어서는 많은 문제점을 가지고 있다. [2-4] 이러한 문제점을 개선하기 위하여 co-deposition 대신 non-doped Multi Quantum Well(MQW) 구조를 사용하여 doping 하지 않는 방법을 이용하는 논문들이 보고 되고 있다. Hole, electron, exciton이 MQW 구조를 지나면서, dopant well 안에 갇히게 되고, 그 안에서 다른 layer 간에 energy transfer와, hole-electron leakage가 줄어 들어, 더 효율적인 유기 발광 다이오드를 만들 수 있게 된다. [5-7] 이 연구에서는 CBP를 Potential Barrier로 사용하고, Ir(ppy)3 (Green dopant), Ir(btp)2 (Red dopant) 를 각각 Potential Well로 사용하였고, 두께는 CBP 9nm, dopant 1nm로 하였다. 이러한 소자를 만들고 dopant를 3개의 well에 적당히 배치하여, 각 well에서의 실험적인 발광 량 과, EML 안에서의 발광 mechanism 그리고 각 potential barrier를 줄여가며 dexter, forster에 의한 energy transfer에 대하여 알 수 있었다.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.257-261
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• 2015

We report on GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) that can cover the spectral range of $3.6-25{\mu}m$. One advantage of the GaAs QWIPs is the wavelength tenability as a function of their structural parameters. We have performed a systematic calculation on the detection wavelength of a typical $GaAs/Al_xGa_{1-x}As$ multi-quantum-well photodetector, with the aluminum mole fraction (x) of $Al_xGa_{1-x}As$ barrier in the range of 0.15-0.43 and the quantum-well width range from 30 to 60 $60{\AA}$. Design and fabrication of a QWIP based on $GaAs/Al_{0.23}Ga_{0.77}As$ structure with $37{\AA}$-thick well width has been carried out. The calculated operation wavelength of the QWIP is in a good agreement with the experimental data taken by photo response and activation energy calculation from thermal quenching of integrated photoluminescence.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.221-225
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• 1994

We described the impact ionization rates of electron in GaAs/AlGaAs MQH(multi- quantum well) using EMC(ensenble Monte Carlo) simulation. Hot electron energy of injected into quantum well is increasing nearly liearly due to the applied electric field to the barrier of MQM inspite of various Al mole fraction in AlGaAs or barrier width. Impact ionization rates are decreasing exponentially by increasing Al mole fraction, and they have peak vague due to the barrier width.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.204-206
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• 1990