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http://dx.doi.org/10.3740/MRSK.2007.17.9.489

Optoelectronics Properties of In0.27Ga0.73N/GaN Multi-Quantum-Well Structure  

Park, Hun-Bo (Department of Physics, Yeungnam University)
Bae, In-Ho (Department of Physics, Yeungnam University)
Kim, Ki-Hong (Department of Visual Optics, Kyungwoon University)
Publication Information
Korean Journal of Materials Research / v.17, no.9, 2007 , pp. 489-492 More about this Journal
Abstract
Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.
Keywords
InGaN/GaN; Multiple quantum well; Electroluminescence; Band-filling;
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