• Title/Summary/Keyword: Multi-Junction

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Fabrication and Charactreization of YBCO Multi-layer Thin Films for Josephson device (죠셉슨 소자구현을 위한 YBCO다층 박막 제작 및 특성)

  • Lee, H.S.;Park, J.Y.;Park, S.H.;Lee, D.H.;Park, H.J.;Kim, Y.J.
    • Proceedings of the KIEE Conference
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    • 2002.06a
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    • pp.49-51
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    • 2002
  • In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.

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Applied Spherical Lens with Reflect Mirror for the CPV module (반사판 적용 구형렌즈를 갖는 집광형 태양전지모듈)

  • Lee, Kang-Yeon;Jeong, Byeong-Ho;Kim, Hyo-Jin
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.11
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    • pp.83-90
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    • 2011
  • There are two main types of concentrating optical systems in use today: refractive types that use Fresnel lenses, and reflective systems that use one or more mirrors. Regardless of the chosen optical system, the result is concentrated sunlight being aimed at the sensitive face of the cell, to produce more energy from less photovoltaic material. In this paper, for the achieve trackerless CPV system, CPV module included that the spherical lens with reflect mirror makes it possible to achieve high and stable power generation performance for the high concentration photovoltaic power generation system and cope with the needs for a variety of shapes and sizes in flexible manners and that the multiple cavity assemble method greatly reduces costs. Development of these high performance multi-junction CPV module promises to accelerate growth in photovoltaic power generation.

The Study of the Tunnel Recombination Junction Properties in Multi-Junction Thin Film Silicon Solar Cells (다중 적층형 박막 실리콘 태양 전지의 터널 접합 특성 연구)

  • Hwang, Sun-Tae;Shim, Jenny H.;Chung, Jin-Won;Ahn, Seh-Won;Lee, Heon-Min
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.62.2-62.2
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    • 2010
  • 박막 실리콘 태양 전지는 저가격화 및 대량생산, 대면적화에 유리하다는 장점을 가지고 있다. 단점으로 지적되는 낮은 효율을 극복하기 위해 광흡수층의 밴드갭이 서로 다른 두 개 이상의 박막을 적층하여, 넓은 파장 대역의 빛을 효과적으로 흡수함으로써 광변환 효율을 올리기 위한 많은 연구가 이루어지고 있다. 서로 다른 밴드갭의 광흡수층을 가진 p-i-n 구조를 다중 적층하여 고효율의 태양 전지를 제작하기 위해서는 n-도핑층과, p-도핑층 간에 전자와 정공이 빠르게 재결합할 수 있는 터널 접합(Tunnel Recombination Junction)의 형성이 필수적이며, 이때 광손실이 최소화되도록 해야한다. 만약 터널 접합이 적절하게 형성되지 않으면 결합되지 않은 전자와 정공이 도핑층 사이에 쌓이게 되고, 도핑층 사이의 저항 증가로 태양 전지의 광변환 효율은 크게 하락한다. 이번 연구에서는 터널 접합이 잘 이루어지게 하기 위한 n-도핑층 및 p-도핑층 박막의 특성과, 터널 접합의 특성에 따른 적층형 태양 전지의 광효율 변화를 확인하였다. 광흡수층 및 도핑층은 TCO($SnO_2:F$, Asahi) 유리 기판 위에 PECVD를 사용하여 p-i-n 구조로 RF Power 조건에서 증착되었고, ${\mu}c$-Si 광흡수층의 경우에는 VHF Power 조건에서 증착되었다. 광흡수층이 a-Si/${\mu}c$-Si의 구조를 가지는 이중 접합 태양 전지에서 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층 사이의 터널 접합 실험 결과 n-도핑층 및 p-도핑층의 결정화도와 도핑 농도를 조절하여 터널 접합의 저항을 최소화했고, 터널 접합 특성이 이중 접합 셀의 광효율 특성과 유사한 경향을 보임을 확인하였다. 광흡수층이 a-Si/a-SiGe/${\mu}c$-Si의 구조를 가지는 삼중 접합 태양 전지 실험의 경우 a-Si과 a-SiGe 광흡수층 사이에 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층/a-SiC p-도핑층의 구조를 적용하여 터널 접합을 형성하였으며, ${\mu}c$-Si p-도핑층의 두께 및 박막 특성을 개선하여 광손실이 최소화된 터널 접합을 구현하였고, 삼중 접합 태양 전지에 적용되었다.

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Fabrication of p-type FinFETs with a 20 nm Gate Length using Boron Solid Phase Diffusion Process

  • Cho, Won-Ju
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.1
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    • pp.16-21
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    • 2006
  • A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

Reduction of Light Reflectance from InAlP by the Texture Formation Using Ultra-Thin Pt Layer (Pt 금속 박막을 이용한 InAlP층의 텍스쳐 구조 형성 및 반사율 측정)

  • Shin, Hyun Wook;Shin, Jae Cheol;Kim, Hyo Jin;Kim, Sung;Choe, Jeong-Woo
    • Journal of the Korean Vacuum Society
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    • v.22 no.3
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    • pp.150-155
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    • 2013
  • Textured surface has been fabricated to reduce the light reflectance from the solar cells. The textured surface is very suitable for the multi-junction III-V solar cells because it can decrease the light reflectance over a large wavelength range. In this study, we have generated a textured structure on InAlP which is used for the window layer of the multi-junction III-V solar cells. Ultra-thin Pt layer (0.7 nm) has been used for wet etching mask. An array of nanosized pyramid shape formed on InAlP surface dramatically reduces the light reflectance up to 13.7% over a large wavelength range (i.e., $0.3{\sim}1.5{\mu}m$).

Examination of Dose Change at the Junction at the Time of Treatment Using Multi-Isocenter Volumetric Modulated Arc Therapy (용적조절호형방사선치료(VMAT)의 다중치료중심(Multi- Isocenter)을 이용한 치료 시, 접합부(Junction)의 선량 변화에 대한 고찰)

  • Jung, Dong Min;Park, Kwang Soon;Ahn, Hyuk Jin;Choi, Yoon Won;Park, Byul Nim;Kwon, Yong Jae;Moon, Sung Gong;Lee, Jong Oon;Jeong, Tae Sik;Park, Ryeong Hwang;Kim, Se young;Kim, Mi Jung;Baek, Jong Geol;Cho, Jeong Hee
    • The Journal of Korean Society for Radiation Therapy
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    • v.33
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    • pp.9-14
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    • 2021
  • This study examined dose change depending on the reposition error of the junction at the time of treatment with multi-isocenter volumetric modulated arc therapy. This study selected a random treatment region in the Arccheck Phantom and established the treatment plan for multi-isocenter volumetric modulated arc therapy. Then, after setting the error of the junction at 0 ~ 4 mm in the X (left), Y (upper), and Z (inner and outer) directions, the area was irradiated using a linear accelerator; the point doses and gamma indexes obtained through the Phantom were subsequently analyzed. It was found that when errors of 2 and 4 mm took place in the X and Y directions, the gamma pass rates (point doses) were 99.3% (2.085) and 98% (2.079 Gy) in the former direction and 98.5% (2.088) and 95.5% (2.093 Gy) in the latter direction, respectively. In addition, when errors of 1, 2, and 4 mm occurred in the inner and outer parts of the Z direction, the gamma pass rates (point doses) were found to be 94.8% (2.131), 82.6% (2.164), and 72.8% (2.22 Gy) in the former part and 93.4% (2.069), 90.6% (2.047), and 79.7% (1.962 Gy) in the latter part, respectively. In the X and Y directions, errors up to 4 mm were tolerable; however, in the Z direction, error values exceeding 1 mm were beyond the tolerance level. This suggests that for high and low dose areas, errors in the direction same as the progress direction in the treatment region have a more sensitive dose distribution. If the guidelines for set-up errors are established at the institutional level through continuous research in the future, it will be possible to provide good quality treatment using junctions.

Programming Characteristics of the Multi-bit Devices Based on SONOS Structure (SONOS 구조를 갖는 멀티 비트 소자의 프로그래밍 특성)

  • 김주연
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.9
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    • pp.771-774
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    • 2003
  • In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

Effects of multi-strain probiotic supplementation on intestinal microbiota, tight junctions, and inflammation in young broiler chickens challenged with Salmonella enterica subsp. enterica

  • Chang, Chi Huan;Teng, Po Yun;Lee, Tzu Tai;Yu, Bi
    • Asian-Australasian Journal of Animal Sciences
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    • v.33 no.11
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    • pp.1797-1808
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    • 2020
  • Objective: This study assessed the effects of probiotics on cecal microbiota, gene expression of intestinal tight junction proteins, and immune response in the cecal tonsil of broiler chickens challenged with Salmonella enterica subsp. enterica. Methods: One-day-old broiler chickens (n = 240) were randomly allocated to four treatments: negative control (Cont), multi-strain probiotic-treated group (Pro), Salmonella-infected group (Sal), and multi-strain probiotic-treated and Salmonella-infected group (ProSal). All chickens except those in the Cont and Pro groups were gavaged with 1×108 cfu/mL of S. enterica subsp. enterica 4 days after hatching. Results: Our results indicated that body weight, weight gain, and feed conversion ratio of birds were significantly reduced (p<0.05) by Salmonella challenge. Chickens challenged with Salmonella decreased cecal microbial diversity. Chickens in the Sal group exhibited abundant Proteobacteria than those in the Cont, Pro, and ProSal groups. Salmonella infection downregulated gene expression of Occludin, zonula occludens-1 (ZO1), and Mucin 2 in the jejunum and Occludin and Claudin in the ileum. Moreover, the Sal group increased gene expression of interferon-γ (IFN-γ), interleukin-6 (IL-6), IL-1β, and lipopolysaccharide-induced tumor necrosis factor-alpha factor (LITAF) and reduced levels of transforming growth factor-β4 and IL-10 compared with the other groups (p<0.05). However, chickens receiving probiotic diets increased Lactobacillaceae abundance and reduced Enterobacteriaceae abundance in the ceca. Moreover, supplementation with probiotics increased the mRNA expression of Occludin, ZO1, and Mucin 2 in the ileum (p<0.05). In addition, probiotic supplementation downregulated the mRNA levels of IFN-γ (p<0.05) and LITAF (p = 0.075) and upregulated IL-10 (p = 0.084) expression in the cecal tonsil. Conclusion: The administration of multi-strain probiotics modulated intestinal microbiota, gene expression of tight junction proteins, and immunomodulatory activity in broiler chickens.

CORNER SINGULARITY AT THE MULTIPLE JUNCTION OF THE ELECTRIC TRANSMISSION

  • Choe, Hi-Jun;Park, Kyong-Yop;Sohn, Ayoung
    • Journal of the Korean Mathematical Society
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    • v.42 no.6
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    • pp.1311-1322
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    • 2005
  • We consider the several plane sector domains which are bonded together along common edges with vertex at the origin. Such domains appear in electric conducting problem with multi-layered heterogeneous media. Our aim is to give a structure theorem of the singularities of the electric field at the corner. Also, we provide a regularity theorem for the electric field.

Design of Cold-junction Compensation and Disconnection Detection Circuits of Various Thermocouples(TC) and Implementation of Multi-channel Interfaces using Them (다양한 열전쌍(TC)의 냉점보상과 단선감지 회로설계 및 이를 이용한 다채널 인터페이스 구현)

  • Hyeong-Woo Cha
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.45-52
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    • 2023
  • Cold-junction correction(CJC) and disconnection detection circuit design of various thermocouples(TC) and multi-channel TC interface circuit using them were designed. The CJC and disconnection detection circuit consists of a CJC semiconductor device, an instrumentation amplifier(IA), two resistors and a diode for disconnection detection. Based on the basic circuit, a multi-channel interface circuit was also implemented. The CJC was implemented using compensation semiconductor and IA, and disconnection detection was detected by using two resistor and a diode so that IA input voltage became -0.42V. As a result of the experiment using R-type TC, the error of the designed circuit was reduced from 0.14mV to 3㎶ after CJC in the temperature range of 0℃ to 1400℃. In addition, it was confirmed that the output voltage of IA was saturated from 88mV to -14.2V when TC was disconnected from normal. The output voltage of the designed circuit was 0V to 10V in the temperature range of 0℃ to 1400℃. The results of the 4-channel interface experiment using R-type TC were almost identical to the CJC and disconnection detection results for each channel. The implemented multi-channel interface has a feature that can be applied equally to E, J, K, T, R, and S-type TCs by changing the terminals of CJC semiconductor devices and adjusting the IA gain.