• Title/Summary/Keyword: Multi crystalline

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Study on laser texturing process for fabrication of high efficiency solar cell (고효율 태양전지 제작을 위한 레이저 텍스쳐링 연구)

  • Ko, Ji-Soo;Jeong, Han-Wook;Gong, Dae-Yeong;Lee, Won-Baek;Kim, Kwang-Ryul;Shin, Sung-Wook;Park, Hong-Jin;Choi, Byoung-Deog
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.143-146
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    • 2009
  • One of the most important issues of crystalline silicon solar cell is minimizing reflectance at the surface. Laser texturing is an isotropic process that will sculpt the surface of a silicon wafer, regardless of its crystallographic orientation. We investigated surface texturing process using Nd-YAG laser ($\lambda$=1064 nm) on multi-crystalline silicon wafer. Removal of slag formed after the laser process was performed using acid solution (HF : $HNO_3$ : $CH_3COOH$ : DI water). The reflectance and carrier lifetime of the samples were measured and analyzed using UV-Vis spectrophotometer and carrier lifetime tester. It was found that the minimum reflectance of the samples was 16.39% and maximum carrier life time was $21.8\;{\mu}s$.

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Present Status and Prospects of Thin Film Silicon Solar Cells

  • Iftiquar, Sk Md;Park, Jinjoo;Shin, Jonghoon;Jung, Junhee;Bong, Sungjae;Dao, Vinh Ai;Yi, Junsin
    • Current Photovoltaic Research
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    • v.2 no.2
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    • pp.41-47
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    • 2014
  • Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

On the Structure and the Extent of Disorder in Non-crystalline Silicates at High Pressure: 2 Dimensional Solid-state NMR Study (2차원 고상 핵자기 공명기를 이용한 비정질 규산염의 고압구조 및 무질서도에 대하여)

  • Lee Sung Keun
    • Journal of the Mineralogical Society of Korea
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    • v.18 no.1
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    • pp.45-52
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    • 2005
  • The recent development and advances in 2 dimensional solid-state NMR, particularly, triple quantum (3Q) MAS NMR yield much improved resolution compared with conventional 1 dimensional MAS NMR, allowing us to study the distributions of cations and anions in the non-crystalline silicate glasses and melts. Here, we present the recent progress made by 3QMAS NMR spectra of silicate glasses quenched from melts at pressures up to 10 GPa in a multi-anvil apparatus, revealing previously unknown details of structures of covalent oxide glasses and melts at high pressure.

Thermal Decomposition Behavior and Durability Evaluation of Thermotropic Liquid Crystalline Polymers

  • Shin, Sang-Mi;Kim, Seong-Hun;Song, Jun-Kwang
    • Macromolecular Research
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    • v.17 no.3
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    • pp.149-155
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    • 2009
  • The thermal decomposition behavior and degradation characteristics off our different thermotropic liquid crystalline polymers (TLCPs) were studied. The thermal decomposition behavior was determined by means of thermogravimetric analysis (TGA) at different heating rates in nitrogen and air. The order of the thermal stability was as follows: multi-aromatic polyester > hydroxybenzoic acid (HBA)/hydroxynaphthoic acid (HNA) copolyester > HNA/hydroxyl acetaniline (HAA)/terephthalic acid (TA) copolyester > HBA/Poly(ethylene terephthalate) (PET) copolyester. The activation energies of the thermal degradation were calculated by four multiple heating rate methods: Flynn-Wall, Friedman, Kissinger, and Kim-Park. The Flynn-Wall and Kim-Park methods were the most suitable methods to calculate the activation energy. Samples were exposed to an accelerated degradation test (ADT), under fixed conditions of heat ($63{\pm}3^{\circ}C$), humidity ($30{\pm}4%$) and Xenon arc radiation ($1.10\;W/m^2$), and the changes in surface morphology and color difference with time were determined. The TLCPs decomposed, discolored and cracked upon exposure to ultraviolet radiation.

Hydrogen Storage Behaviors of Multi-walled Carbon Nanotubes Modified by Physical Activation Process (기상활성화 표면처리된 다중벽 탄소나노튜브의 수소저장거동)

  • Park, Soo-Jin;Lee, Seul-Yi;Kim, Byung-Joo
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.765-768
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    • 2009
  • In this work, we prepared the activated multi-walled carbon nanotubes (Acti-MWNTs) with well developed physical surface structures, high specific surface area, and higher adsorption capacity by a physical activation process, in order to enhance the hydrogen storage capacity. The Acti-MWNTs' changes in the crystalline phase and in their lattice distortions were characterized by X-ray diffraction (XRD). The textural properties of the Acti-MWNTs were investigated by a nitrogen adsorption isotherms by Brunauer-Emmett-Teller (BET) equation and Harvath-Kawazoe (H-K) calculation, respectively. The hydrogen storage capacity of the Acti-MWNTs was investigated by BEL-HP at 298 K/100 bar. The hydrogen storage capacity of the Acti-MWNTs was improved with the physical activation, resulted from the formation of new hydrogen-favorable sites on the Acti-MWNT surfaces. In conclusion, the physical activation was one of the effective method to enhance the hydrogen storage capacity of the MWNTs.

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Study on Fiber Laser Annealing of p-a-Si:H Deposition Layer for the Fabrication of Interdigitated Back Contact Solar Cells (IBC형 태양전지 제작을 위한 p-a-Si:H 증착층의 파이버 레이저 가공에 관한 연구)

  • Kim, Sung-Chul;Lee, Young-Seok;Han, Kyu-Min;Moon, In-Yong;Kwon, Tae-Young;Kyung, Do-Hyun;Kim, Young-Kuk;Heo, Jong-Kyu;Yoon, Ki-Chan;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.430-430
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    • 2008
  • Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

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Texturing Multi-crystalline Silicon for Solar Cell (태양전지용 다결정실리콘 웨이퍼의 표면 처리용 텍스쳐링제)

  • Ihm, DaeWoo;Lee, Chang Joon;Suh, SangHyuk
    • Applied Chemistry for Engineering
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    • v.24 no.1
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    • pp.31-37
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    • 2013
  • Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.

New Semiconducting Multi-branched Conjugated Molecules Bearing 3,4-Ethylene-dioxythiophene-based Thiophenyl Moieties for Organic Field Effect Transistor

  • Kim, Dae-Chul;Lee, Tae-Wan;Lee, Jung-Eun;Kim, Kyung-Hwan;Cho, Min-Ju;Choi, Dong-Hoon;Han, Yoon-Deok;Cho, Mi-Yeon;Joo, Jin-Soo
    • Macromolecular Research
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    • v.17 no.7
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    • pp.491-498
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    • 2009
  • New $\pi$-conjugated multi-branched molecules were synthesized through the Homer-Emmons reaction using alkyl-substituted, 3,4-ethylenedioxythiophene-based, thiophenyl aldehydes and octaethyl benzene-l,2,4,5-tetrayltetrakis(methylene) tetraphosphonate as the core unit; these molecules have all been fully characterized. The two multi-branched conjugated molecules exhibited excellent solubility in common organic solvents and good self-film forming properties. The semiconducting properties of these multi-branched molecules were also evaluated in organic field-effect transistors (OFET). With octyltrichlorosilane (OTS) treatment of the surface of the $SiO_2$ gate insulator, two of the crystalline conjugated molecules, 7 and 8, exhibited carrier mobilities as high as $2.4({\pm}0.5){\times}10^{-3}$ and $1.3({\pm}0.5){\times}10^{-3}cm^2V^{-1}s^{-1}$, respectively. The mobility enhancement of OFET by light irradiation ($\lambda$ = 436 nm) supported the promising photo-controlled switching behavior for the drain current of the device.

A Study on Occupational Environment Assessment Strategies for Respirable Particulate Matter at Coal-Fired Power Plants (석탄화력발전소 호흡성분진 작업환경 평가 전략 사례에 관한 연구)

  • Eun-Seung Lee;Yun-Keun Lee;Dong-Il Shin
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.33 no.3
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    • pp.375-383
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    • 2023
  • Objectives: Coal-fired power plants feature diverse working conditions, including multi-layered employment structures and irregular work cycles due to outsourcing and non-standardized tasks. The current uniform occupational environment measurement systems have limitations in accurately assessing and evaluating these varied conditions. This study aims to propose alternative measurement and assessment strategies to supplement existing methods. Methods: Major domestic coal-fired power plants were selected as the study targets. To prepare for the study and establish strategies, work processes were identified and existing occupational environment measurement results were compared and analyzed. The study proceeded by employing three strategies: specific exposure groups (SEGs) measurement, continuous monitoring, and supplementary measurements, which were then compared and discussed. Results: Previous exposure index evaluations (5,268 cases) indicated that crystalline silica, a type of respirable particulate matter, had detection limits below the threshold (non-detectable) in 82.6% (4,349 cases) of instances. Exposures below 10% of the exposure limit were observed at a very low concentration of 96.1%. Similar exposure group measurements yielded results where detection limits were below the threshold in 38.2% of cases, and exposures below 10% of the limit were observed in 70.6%. Continuous monitoring indicated detection limits below the threshold in 12.6% of cases, and exposures below 10% of the limit were observed in 75.6%. Instances requiring active workplace management accounted for more than 30% of cases, with SEGs at 11.8% (four cases), showing a higher proportion compared to 3.0% (four cases) in continuous monitoring. For coal dust, exposures below 10% of the limit were highest in legal measurements at 90.2% (113 cases), followed by 74.0% (91 cases) in continuous monitoring, and 47.0% (16 cases) in SEGs. Instances exceeding 30% were most prevalent in SEGs at 14.7% (five cases), followed by legal measurements at 5.0% (eight cases), and continuous monitoring at 2.4% (three cases). When examining exposure levels through arithmetic means, crystalline silica was found to be 104.7% higher in SEGs at 0.0088 mg/m3 compared to 0.0043 mg/m3 in continuous monitoring. Coal dust measurements were highest in SEGs at 0.1247 mg/m3, followed by 0.1224 mg/m3 in legal measurements, and 0.0935 mg/m3 in continuous monitoring. Conclusions: Strategies involving SEGs measurement and continuous monitoring can enhance measurement reliability in environments with irregular work processes and frequent fluctuations in working conditions, as observed in coal-fired power plants. These strategies reduce the likelihood of omitting or underestimating processes and enhance measurement accuracy. In particular, a significant reduction in detection limits below the threshold for crystalline silica was observed. Supplementary measurements can identify worker exposure characteristics, uncover potential risks in blind spots of management, and provide a complementary method for legal measurements.

Synthesis and Characterization of Cu(In,Ga)Se2 Nanostructures by Top-down and Bottom-up Approach

  • Lee, Ji-Yeong;Seong, Won-Kyung;Moon, Myoung-Woon;Lee, Kwang-Ryeol;Yang, Cheol-Woong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.440-440
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    • 2012
  • Nanomaterials have emerged as new building blocks to construct light energy harvesting assemblies. Size dependent properties provide the basis for developing new and effective systems with semiconductor nanoparticles, quantized charging effects in metal nanoparticle or their combinations in 2 and 3 dimensions for expanding the possibility of developing new strategies for photovoltaic system. As top-down approach, we developed a simple and effective method for the large scale formation of self-assembled Cu(In,Ga)$Se_2$ (CIGS) nanostructures by ion beam irradiation. The compositional changes and morphological evolution were observed as a function of the irradiation time. As the ion irradiation time increased, the nano-dots were transformed into a nano-ridge structure due to the difference in the sputtering yields and diffusion rates of each element and the competition between sputtering and diffusion processes during irradiation. As bottom-up approach, we developed the growth of CIGS nanowires using thermal-chemical vapor deposition (CVD) method. Vapor-phase synthesis is probably the most extensively explored approach to the formation of 1D nanostructures such as whiskers, nanorods, and nanowires. However, unlike binary or ternary chalcogenides, the synthesis of quaternary CIGS nanostructures is challenging because of the difficulty in controlling the stoichiometry and phase structure. We introduced a method for synthesis of the single crystalline CIGS nanowires in the form of chalcopyrite using thermal-CVD without catalyst. It was confirmed that the CIGS nanowires are epitaxially grown on a sapphire substrate, having a length ranged from 3 to 100 micrometers and a diameter from 30 to 500 nm.

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